Ion implantation system

Claim 2

An ion implantation system comprising: a plurality of high current separated ion sources, each of said high current ion sources comprising: a plasma chamber having an anode and a cathode, a feed supply to said plasma chamber for supplying feed material to be ionized in said plasma chamber, walls defining a narrow rectangular exit slot from said plasma chamber, through which slot ions are extracted along a path to form a high aspect ratio ribbon ion beam of substantially rectangular crosssection and having a height and a thickness; magnetic field means for producing in said plasma chamber a magnetic field across said path in the direction of the height of the beam; first and second separator electrodes positioned on opposite sides of said path laterally of said path in the thickness dimension of the beam for applying an electric field across said path, said separator electrodes being positioned with respect to said magnetic field means so that said electric field is transverse with respect to said magnetic field to separate unwanted ion species laterally from the ion beam; and a target drum rotating on an axis for circumferentially carrying therearound a plurality of target wafers, said plurality of separated ion sources being positioned radially around said target drum, each of said plurality of separated ion sources being positioned to impinge upon the target as the target is moved to provide a multiple implantation on the target.

Claim 3

The system of claim 1 further including an analyzer opening positioned downstream along the beam path beyond said separator electrodes, said analyzer opening being an elongated slot positioned substantially parallel to said walls of said exit slot.

Claim 4

The system of claim 1 wherein an analyzer opening is positioned along the path of the ribbon ion beam downstream of said separator electrodes, said opening being slot shaped with the width of said slot being in a direction between said separator electrodes and the height of said slot being parallel to said electrodes.

Claim 5

The system of claim 1 further including an accelerator electrode positioned adjacent to the beam path to accelerate ions which have been extracted from said exit slot along the beam path so that a separated ion beam having an ion current above 100 microamperes is formed.

Claim 6

An ion implantation system comprising: a plurality of high current separated ion sources, each of said high current ion sources comprising: a plasma chamber having an anode and a cathode, a feed supply to said plasma chamber for supplying feed material to be ionized in said plasma chamber, walls defining a narrow rectangular exit slot from said plasma chamber, through which slot ions are extracted along a path to form a high aspect ratio ribbon ion beam of substantially rectangular cross-section and having a height and a thickness; magnetic field means for producing in said plasma chamber a magnetic field across said path in the direction of the height of the beam; first and second separator electrodes positioned on opposite sides of said path laterally of said path in the thickness dimension of the beam for applying an electric field across said path, said separator electrodes being positioned with respect to said magnetic field means so that said electric field is transverse with respect to said magnetic field to separate unwanted ion species laterally from the ion beam; and a target drum rotating on an axis for circumferentially carrying therearound a plurality of target wafers, said plurality of separated ion sources being positioned radially around said target drum, said deflection plates being positioned to deflect the rectangular ion beams in a direction axially of said target holding drum, each of said plurality of separated ion sources being positioned to impinge upon the target as the target is moved to provide multiple implantation of the target.

Claim 7

An ion implantation system comprising: a plurality of high current separated ion sources, each of said high current ion sources comprising: a plasma chamber having an anode and a cathode, a feed supply to said plasma chamber for supplying feed material to be ionized in said plasma chamber, walls defining a narrow rectangular exit slot from said plasma chamber, through which slot ions are extracted along a path to form a high aspect ratio ribbon ion beam of substantially rectangular cross-section and having a height and a thickness; magnetic field means for producing in said plasma chamber a magnetic field across said path in the direction of the height of the beam; first and second separator electrodes positioned on opposite sides of said path laterally of said path in the thickness dimension of the beam for applying an electric field across said path, said separator electrodes being positioned with respect to said magnetic field means so that said electric field is transverse with respect to said magnetic field to separate unwanted ion species laterally from the ion beam; and a target drum rotating on an axis for circumferentially carrying therearound a plurality of target wafers, said plurality of separated ion sources being positioned radially around said target drum, said deflection plates being positioned to deflect the rectangular ion beams in a direction axially of said target holding drum, each of said plurality of separated ion sources being positioned to impinge upon the target as the target is moved to provide multiple implantation of the target.

Claim 8

The ion implantation system of claim 1 wherein each said ribbon beam ion source is in a vacuum envelope and said target is in a separate target chamber; a beam slot between said ion beam source vacuum envelope and said target chamber for permitting transmission of ribbon beam from said ion beam source vacuum envelope into said target chamber; and a gate for closing off said ion beam opening so that said target chamber can be opened without opening said ion beam source vacum envelope.

Claim 9

An ion implantation system comprising: a plurality of high current separated ion sources, each of said high current ion sources comprising: a plasma chamber having an anode and a cathode, a feed supply to said plasma chamber for supplying feed material to be ionized in said plasma chamber, walls defining a narrow rectangular exit slot from said plasma chamber, through which slot ions are extracted along a path to form a high aspect ratio ribbon ion beam of substantially rectangular cross-section and having a height and a thickness; magnetic field means for producing in said plasma chamber a magnetic field across said path in the direction of the height of the beam; first and second separator electrodes positioned on opposite sides of said path laterally of said path in the thickness dimension of the beam for applying an electric field across said path, said separator electrodes being positioned with respect to said magnetic field means so that said electric field is transverse with respect to said magnetic field to separate unwanted ion species laterally from the ion beam; and a longitudinally moving target strip, said plurality of ion sources being positioned in the direction parallel to movement of said target strip, said rectangular ion beams being positioned with their long direction in the direction of movement of the target strip and said deflection plates being positioned to deflect said ion beams transversely of the direction of movement of said target strip to provide a multiple implantation on said target strip.

Claim 10

An ion implantation system comprising: a plurality of high current separated ion sources, each of said high current ion sources comprising: a plasma chamber having an anode and a cathode, a feed supply to said plasma chamber for supplying feed material to be ionized in said plasma chamber, walls defining a narrow rectangular exit slot from said plasma chamber, through which slot ions are extracted along a path to form a high aspect ratio ribbon ion beam of substantially rectangular cross-section and having a height and a thickness; magnetic field means for producing in said plasma chamber a magnetic field across said path in the direction of the height of the beam; first and second separator electrodes positioned on opposite sides of said path laterally of said path in the thickness dimension of the beam for applying an electric field across said path, said separator electrodes being positioned with respect to said magnetic field means so that said electric field is transverse with respect to said magnetic field to separate unwanted ion species laterally from the ion beam; and a longitudinally moving target strip, said plurality of ion sources being positioned in the direction parallel to movement of said target strip, said rectangular ion beams being positioned with their long direction in the direction of movement of the target strip and said deflection plates being positioned to deflect said ion beams transversely of the direction of movement of said target strip to provide a multiple implantation on said target strip.

Claim 11

The ion implantation system of claim 7 wherein each said ribbon beam ion source is in a vacuum envelope and said target is in a separate target chamber; a beam slot between said ion beam source vacuum envelope and said target chamber for permitting transmission of ribbon beam from said ion beam source vacuum envelope into said target chamber; and a gate for closing off said ion beam opening so that said target chamber can be opened without opening said ion beam source vacuum envelope.

Claim 12

The system of claim 7 wherein an analyzer opening is positioned along the path of the ribbon ion beam downstream of said separator electrodes, said opening beam slot shaped with the width of said slot being in a direction between said separator electrodes and the height of said slot being parallel to said electrodes.

Claim 13

The system of claim 7 further including an accelerator electrode positioned adjacent to the beam path to accelerate ions which have been extracted from said exit slot along the beam path so that a separated ion beam having an ion current above 100 microamperes is formed.