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Patent US4344984A successfully refreshed from Google Patents.
US4344984A
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Process for producing a layer containing silicon
Assignee: Thales SA
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Filing: 1981-06-17
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Granted: 1982-08-17
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Expires: 2001-06-17
Abstract
Abstract The process consists of introducing into the silicon-containing layer at the same time as silicon deposition, another element of column IVa of the periodic classification in a proportion equal to or below 5% of the number of silicon atoms and greater than 0.1%. According to a preferred variant, this element is germanium. Deposition takes place at a temperature close to the crystallization temperature T. The process can comprise a subsequent phase during which the deposited layer undergoes heat treatment in an atmosphere of a plasma containing hydrogen or one of its isotopes at a temperature below the crystallization temperature T of the layer.
Inventors
- 👤 Daniel Kaplan
- 👤 Pierre Landouar
- 👤 Eric Criton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:22
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/20; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
86 words
A process for producing a layer containing silicon by deposition on a support, wherein it comprises the introduction during deposition of at least one other element of column IVa of the periodic classification in a proportion equal to or below 5% of the number of silicon atoms and equal to or greater than 0.1% of the number of silicon atoms and wherein the deposition temperature is chosen from a predetermined temperature range, whose lower limit is equal to the crystallization temperature T of the said layer.
Claim 2
Dependent Claim
86 words
A process for producing a layer containing silicon by deposition on a support, wherein it comprises the introduction during deposition of at least one other element of column IVa of the periodic classification in a proportion equal to or below 5% of the number of silicon atoms and equal to or greater than 0.1% of the number of silicon atoms and wherein the deposition temperature is chosen from a predetermined temperature range, whose lower limit is equal to the crystallization temperature T of the said layer.
Claim 3
Dependent Claim
27 words
A process according to claim 1, wherein the deposition temperature is chosen in a range, whose lower limit is T and whose upper limit is T+50° C.
Claim 4
Dependent Claim
18 words
A process according to claim 1, wherein the element of column IVa of the periodic classification is germanium.
Claim 5
Dependent Claim
28 words
A process according to claim 1, wherein the deposition takes place in the gaseous phase by chemical decomposition of a gaseous mixture comprising at least one silicon hydride.
Claim 6
Dependent Claim
12 words
A process according to claim 4, wherein the silicon hydride is silane.
Claim 7
Dependent Claim
28 words
A process according to claim 4, wherein the said gaseous mixture also comprises germane in such a way that germanium can be introduced into the layer during deposition.
Claim 8
Dependent Claim
23 words
A process according to claim 4, wherein the gaseous mixture also comprises a gaseous composition of a type n or p doping element.
Claim 9
Dependent Claim
54 words
A process according to claim 1, wherein it comprises a stage following the deposition during which the silicon-containing layer and an element of column IVa of the periodic classification undergoes heat treatment in the presence of a plasma containing hydrogen or one of its isotopes, the treatment temperature being below the crystallization temperature T.
References Cited (Backward Citations)
FR2433871A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-16 | 1986-02-15 | 1986-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-16 | 1990-02-15 | 1990-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-16 | 1994-02-15 | 1994-08-17 | $7700.00 | Window Closed / Lapsed |