US4344047A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Millimeter-wave power limiter
Assignee: United States Department of the Army
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Filing: 1981-02-12
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Granted: 1982-08-10
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Expires: 2001-02-12
Abstract
Abstract Disclosed is a millimeter wave bulk effect RF power limiter consisting of alanar PIN diode formed on a gallium arsenide (GaAs) substrate which also comprises the waveguide structure for RF energy in the 60-300 GHz range. The PIN diode is comprised of a wedge of intrinsic type semiconductor material formed across the top surface of the substrate and having mutually opposing regions of p and n type semiconductor material fabricated in the side edges of the wedge to which is attached planar beam leads. With suitable electrical operating potentials applied to the PIN diode avalanche breakdown occurs at a critical RF power level which acts to limit the flow of RF energy flow in the structure past the location of the PIN diode. Such a structure permits the device to be integrated into the front end sections of receivers utilized in communications, missile guidance and radar systems operable in the millimeter and sub-millimeter frequency range.
Inventors
- 👤 Samuel Dixon, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:42
CPC Classifications
H; H03; H03G; H03G11/00; H03G11/02; H03G11/025; H10; H10D; H10D8/00; H10D8/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
165 words
An RF power limiter for millimeter and sub millimeter waves, comprising: an image transmission line structure capable of propagating millimeter and sub-millimeter waves; a semiconductor PIN diode formed on one outer surface of said image transmission line structure, said image transmission line structure also being the substrate for said PIN diode; said PIN diode having a planar configuration consisting of a generally flat wedge-shaped region of intrinsic semiconductor material having adjoining edges including mutually opposing regions of oppositely doped semiconductor material separated by an intervening region of intrinsic material of said wedge-shaped region; and circuit means coupled to said intrinsic region and said oppositely doped regions for the application of operating potentials which cause a predetermined non-avalanche current to flow but achieving avalanche breakdown upon the propagation of a predetermined level of millimeter and sub-millimeter wave power along said image transmission line structure causing a portion of the propagating energy to be reflected in the opposite direction to propagation and thereby provide a limiting action.
Claim 2
Dependent Claim
165 words
An RF power limiter for millimeter and sub millimeter waves, comprising: an image transmission line structure capable of propagating millimeter and sub-millimeter waves; a semiconductor PIN diode formed on one outer surface of said image transmission line structure, said image transmission line structure also being the substrate for said PIN diode; said PIN diode having a planar configuration consisting of a generally flat wedge-shaped region of intrinsic semiconductor material having adjoining edges including mutually opposing regions of oppositely doped semiconductor material separated by an intervening region of intrinsic material of said wedge-shaped region; and circuit means coupled to said intrinsic region and said oppositely doped regions for the application of operating potentials which cause a predetermined non-avalanche current to flow but achieving avalanche breakdown upon the propagation of a predetermined level of millimeter and sub-millimeter wave power along said image transmission line structure causing a portion of the propagating energy to be reflected in the opposite direction to propagation and thereby provide a limiting action.
Claim 3
Dependent Claim
20 words
The RF power limiter as defined by claim 1 wherein said image transmission line comprises a dielectric image transmission line.
Claim 4
Dependent Claim
25 words
The RF power limiter as defined by claim 2 wherein said dielectric image transmission line comprises a waveguide structure formed from a Group III-V compound.
Claim 5
Dependent Claim
15 words
The RF power limiter as defined by claim 3 wherein said compound comprises gallium arsenide.
Claim 6
Dependent Claim
31 words
The power limiter as defined by claim 2 wherein said circuit means includes a pair of planar ohmic contact regions respectively connected to said opposing regions of oppositely doped semiconductor material.
Claim 7
Dependent Claim
55 words
The power limiter as defined by claim 5 wherein said ohmic contact regions are adapted to receive a DC bias potential and wherein said circuit means additionally includes means for applying a control potential to said wedge-shaped region of intrinsic semiconductor material in the region of the base edge thereof terminating at said adjoining edges.
Claim 8
Dependent Claim
23 words
The RF power limiter as defined by claim 5 wherein said ohmic contact regions are comprised of planar beam lead type contact regions.
Claim 9
Dependent Claim
29 words
The RF power limiter as defined by claim 2 wherein said mutually opposing regions of oppositely doped semiconductor material extend from the respective edges into said wedge-shaped intrinsic region.
Claim 10
Dependent Claim
35 words
The RF power limiter as defined by claim 2 wherein said mutually opposing regions of oppositely doped semiconductor material extend outwardly from and along the respective edges of said adjoining edges of said intrinsic region.
Claim 11
Dependent Claim
44 words
The power limiter as defined by claim 2 wherein said flat wedge-shaped region of intrinsic semiconductor material is of a predetermined substantially uniform thickness and wherein said regions of oppositely doped semiconductor material are of the same substantially uniform thickness as said intrinsic region.
Claim 12
Dependent Claim
53 words
The power limiter as defined by claim 5 wherein said wedge-shaped region of intrinsic material extends transversely across a lengthwise outer surface of said gallium arsenide waveguide structure including multiple outer surfaces and having an apex and an opposite elongated base edge lying proximate to respective outer side surfaces meeting said lengthwise surface.
Claim 13
Dependent Claim
59 words
The diode structure as defined by claim 11 wherein said adjoining edges including the mutually opposing regions of oppositely doped semiconductor material comprise diagonal edges running transverse to the longitudinal direction of the lengthwise outer surface of waveguide structure and wherein said mutually opposing regions of oppositely doped semiconductor material are located substantially midway across said lengthwise outer surface.
Claim 14
Dependent Claim
26 words
The power limiter as defined by claim 2 wherein said opposing regions of oppositely doped semiconductor material are comprised of n and p type semiconductor material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-09 | 1986-02-08 | 1986-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-09 | 1990-02-08 | 1990-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-09 | 1994-02-08 | 1994-08-10 | $7700.00 | Window Closed / Lapsed |