Patent US4343829A successfully refreshed from Google Patents.
US4343829A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating single-crystalline silicon films
Assignee: Hitachi Ltd
•
Filing: 1981-03-04
•
Granted: 1982-08-10
•
Expires: 2001-03-04
Abstract
Abstract Herein disclosed is a method of fabricating a thick single-crystalline silicon film at a low temperature less than 1000° C. The method is characterized in that, simultaneously as silicon polycrystals are grown on a substrate to form polycrystalline silicon, said polycrystals are irradiated and annealed with a laser or electron beam so that said polycrystalline silicon is single-crystallized to fabricate a single-crystalline silicon film.
Inventors
- 👤 Hiroo Tochikubo
- 👤 Akira Kanai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:58
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/02; C30B29/06; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905; Y10S148/00; Y10S148/048; Y10S148/071
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
56 words
A method of fabricating a single-crystalline silicon film comprising depositing a material of polycrystalline silicon on a substrate; and, at the same time as said material is deposited, irradiating said deposited material of polycrystalline silicon with a laser or electron beam to single-crystallize said material of polycrystalline silicon and to form a single crystalline silicon film.
Claim 2
Independent Claim
56 words
A method of fabricating a single-crystalline silicon film comprising depositing a material of polycrystalline silicon on a substrate; and, at the same time as said material is deposited, irradiating said deposited material of polycrystalline silicon with a laser or electron beam to single-crystallize said material of polycrystalline silicon and to form a single crystalline silicon film.
Claim 3
Dependent Claim
26 words
A method as set forth in claim 1, wherein the deposition of said polycrystalline silicon material is performed under a temperature condition lower than 1000° C.
Claim 4
Dependent Claim
48 words
A method as set forth in claim 1 or claim 2, wherein both the deposition of said polycrystalline silicon material and the irradiation with said laser or electron beam are performed continuously for a predetermined time period until the single-crystalline silicon film having a desired thickness is fabricated.
Claim 5
Dependent Claim
32 words
A method as set forth in claim 1 or claim 2, wherein said deposited polycrystalline silicon material is irradiated substantially over the entire exposed surface thereof with said laser or electron beam.
Claim 6
Dependent Claim
31 words
A method as set forth in claim 1 or claim 2, wherein said deposited polycrystalline silicon material is irradiated only at a specified region thereof with said laser or electron beam.
Claim 7
Dependent Claim
47 words
A method as set forth in claim 1 or claim 2, wherein said polycrystalline silicon material is deposited by chemical vapor deposition with a gaseous mixture of H 2 or N 2 and a silicon hydride and said deposited polycrystalline material is irradiated with a laser beam.
Claim 8
Dependent Claim
25 words
A method as set forth in claim 1, wherein said single crystalline silicon film is formed to have a thickness in excess of 5000 A.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-09 | 1986-02-08 | 1986-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-09 | 1990-02-08 | 1990-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-09 | 1994-02-08 | 1994-08-10 | $7700.00 | Window Closed / Lapsed |