Patent US4342879A successfully refreshed from Google Patents.
US4342879A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film photovoltaic device
Assignee: DELAWARE A NOT-FOR-PROFIT CORP OF DE, University of
•
Filing: 1980-10-24
•
Granted: 1982-08-03
•
Expires: 2000-10-24
Abstract
Abstract A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.
Inventors
- 👤 Anthony W. Catalano
- 👤 Manjul Bhushan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:04
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F10/00; H10F10/10; H10F10/14; H10F77/12; H10F77/20; H10F77/244; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
114 words
In a photovoltaic device having an ohmic back contact and a transparent electrical contact with at least one semiconductor layer therebetween of a material of the type formed by high temperature growth, the improvement being said device is a homojunction with said semiconductor layer having one region of p-type conductivity and an adjacent region of n-type conductivity with the electrical junction therebetween, said semiconductor layer being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, and said n-type conductivity region of said semiconductor layer being extrinsically doped with an element selected from groups IA and IIA of the Periodic Table.
Claim 2
Dependent Claim
114 words
In a photovoltaic device having an ohmic back contact and a transparent electrical contact with at least one semiconductor layer therebetween of a material of the type formed by high temperature growth, the improvement being said device is a homojunction with said semiconductor layer having one region of p-type conductivity and an adjacent region of n-type conductivity with the electrical junction therebetween, said semiconductor layer being made of a material from the class of isostructural compounds comprised of elements selected from Groups IIB and VA of the Periodic Table, and said n-type conductivity region of said semiconductor layer being extrinsically doped with an element selected from groups IA and IIA of the Periodic Table.
Claim 3
Dependent Claim
26 words
In the device of claim 1 wherein said transparent electrical contact is made from a material capable of acting as said extrinsic n-type conductivity doping agent.
Claim 4
Dependent Claim
22 words
In the device of claim 2 wherein said semiconductor is made from zinc phosphide, and said transparent electrical contact material is magnesium.
Claim 5
Dependent Claim
19 words
In the device of claim 1 wherein said transparent electrical contact is a metallization pattern having substantial open spaces.
Claim 6
Dependent Claim
35 words
In the device of claim 1 wherein said transparent electrical contact is a metallization pattern having substantial open areas, and a continuous window layer is disposed between said metallization pattern and said n-type conductivity region.
Claim 7
Dependent Claim
29 words
In the device of claim 5 wherein said window layer is a thin metal film made from a material capable of acting as said extrinsic n-type conductivity doping agent.
Claim 8
Dependent Claim
118 words
In the device of claim 1 wherein said ohmic back contact is a multilayer substrate capable of withstanding the high temperature for forming said semiconductor layer, said substrate layers including a layer remote from said semiconductor layer comprising a support on which all of the other layers of said device are formed, said substrate layers including a layer having an expansion coefficient equal to or slightly greater than the expansion coefficient of said semiconductor layer, said substrate layers including a metal layer of high conductivity, and said substrate layers including a barrier layer adjacent said semiconductor layer which comprises a diffusion barrier and further comprises adherent means for causing said barrier layer to adhere to said metal layer.
Claim 9
Dependent Claim
41 words
In the device of claim 7 wherein said barrier layer is a different layer than said metal layer, and an intermediate layer being between said barrier layer and said metal layer formed by the reaction of said barrier and metal layers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-02 | 1986-02-01 | 1986-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-02 | 1990-02-01 | 1990-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-02 | 1994-02-01 | 1994-08-03 | $7700.00 | Window Closed / Lapsed |