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US4340899A
Expired / Lapsed
US
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Epitaxial integrated E-dE solid state detector telescope
Assignee: Individual
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Filing: 1980-01-31
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Granted: 1982-07-20
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Expires: 2000-01-31
Abstract
Abstract An epitaxial integrated E-dE solid state detector telescope comprising a dE detector produced on an epitaxial layer and a E detector produced on a high purity silicon layer, both of which are fabricated on a single silicon wafer having N-N + -N type complex structure. Said dE and E detectors are electrically isolated by a very low resistive N + type silicon layer, which is produced on the high purity N type silicon substrate by impurity diffusion technique and is buried under the epitaxial silicon layer. Electrodes of dE and E detectors are produced on both sides of the silicon wafer by means of evaporation of gold in a vacuum. Said electrodes are reverse biased and depletion layers which act as active regions of dE and E detectors are extended from outsides toward said buried layer, providing independent charge collections of carries produced by incident charged particles in dE and E detectors by said electrodes.
Inventors
- 👤 Kazuo Husimi
- 👤 Chisu Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:41
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/295
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
95 words
An epitaxial integrated E-dE solid state detector telescope comprised of: a semiconductor having a complex structure comprising: a high purity semiconductor substrate providing an E detector, a low resistive heavily doped semiconductor layer on said substrate, a slightly doped semiconductor layer produced on said low resistive layer by epitaxial crystal growth providing a dE detector; rectifying electrodes on both sides of said semiconductor wafer; reverse biasing means reverse biasing said electrodes whereby depletion layers extend from outside toward said low resistive layer; said low resistive layer electrically isolating said dE detector from said E detector.
Claim 2
Dependent Claim
95 words
An epitaxial integrated E-dE solid state detector telescope comprised of: a semiconductor having a complex structure comprising: a high purity semiconductor substrate providing an E detector, a low resistive heavily doped semiconductor layer on said substrate, a slightly doped semiconductor layer produced on said low resistive layer by epitaxial crystal growth providing a dE detector; rectifying electrodes on both sides of said semiconductor wafer; reverse biasing means reverse biasing said electrodes whereby depletion layers extend from outside toward said low resistive layer; said low resistive layer electrically isolating said dE detector from said E detector.
Claim 3
Dependent Claim
32 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 1 in which said semiconductor wafer is a N type silicon wafer having a N-N + -N type complex structure.
Claim 4
Dependent Claim
60 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 1 in which said semiconductor wafer is a P type silicon wafer having a P-P + -P type complex structure produced by eptiaxial crystal growth of a P type silicon layer on a heavily doped low resistive silicon layer deposited on a high purity P type silicon substrate.
Claim 5
Dependent Claim
29 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 2 or 3 in which said heavily doped silicon layer is produced by an impurity diffusion technique.
Claim 6
Dependent Claim
29 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 2 or 3 in which said heavily doped silicon layer is produced by an ion inplantation technique.
Claim 7
Dependent Claim
30 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 2 or 3 in which said heavily doped silicon layer is produced by an epitaxial crystal growth technique.
Claim 8
Dependent Claim
22 words
An epitaxial integrated E-dE state detector telescope as claimed in claim 1 in which said rectifying electrodes are surface barrier type electrodes.
Claim 9
Dependent Claim
23 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 1 in which said rectifying electrodes are p-n junction type electrodes.
Claim 10
Dependent Claim
29 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 1 in which said low resistive layer provides an electrical shield between said E and dE detectors.
Claim 11
Dependent Claim
30 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 1 in which said low resistive layer is comprised of a diffusion of impurity in said silicon substrate.
Claim 12
Dependent Claim
30 words
An epitaxial integrated E-dE solid state detector telescope as claimed in claim 10 in which said impurity is antimony diffused in said silicon substrate to provide said low resistive layer.
References Cited (Backward Citations)
US4160985A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-07-19 | 1986-01-18 | 1986-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-07-19 | 1990-01-18 | 1990-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-07-19 | 1994-01-18 | 1994-07-20 | $7700.00 | Window Closed / Lapsed |