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US4336088A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of fabricating an improved multi-layer ceramic substrate

Assignee: International Business Machines Corp
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Filing: 1981-04-27
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Granted: 1982-06-22
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Expires: 2001-04-27
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Abstract

Abstract A method of fabricating an improved multi-layer ceramic substrate for mounting semiconductor devices having a low incidence of cracks between metal filled surface vias, the substrate constructed with a top ceramic layer having a thickness that is at least 20 percent greater than the underlying sheets that embody a redistribution system.

Inventors

  • 👤 Richard J. Hetherington
  • 👤 George E. Melvin
  • 👤 Stephen A. Milkovich
  • 👤 Ernest N. Urfer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 19:28
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; H10W70/01; H10W70/05; H10W70/095; H10W70/611; H10W70/68; H10W70/685; H05; H05K; H05K1/00; H05K1/02; H05K1/0271; H05K1/0296; H05K1/0298; H05K1/03; H05K1/0306; H05K3/00; H05K3/46; H05K3/4611; H05K3/4626; H05K3/4629; H05K3/4644; H05K3/4673; H05K3/4676; H10W70/62; H10W70/63; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W90/00; H10W90/701; H10W90/721; H10W90/724; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49163

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 248 words
An improved method of fabricating a monolithic sintered MLC substrate for a semiconductor package comprising forming a plurality of first ceramic green sheets of a thickness in the range of 6-9 mils, forming vias in said first sheets filling said vias and imprinting metallurgy redistribution patterns with a conductive metallurgy paste on said first sheets, forming a plurality of second ceramic green sheets, forming vias and imprinting metallurgy patterns with a conductive metallurgy paste on said second sheets, forming a single top ceramic green sheet of ceramic material of a thickness of at least 20% greater than the individual thickness of said first sheets, forming a via pattern in said top sheet wherein at least some vias have a center to center spacing when fired in the range of 7-12 mils, with the via diameter being in the range of 35 to 55% of said center to center via spacing, filling said vias in said top sheet with a conductive metallurgy paste, said metallurgy paste, when sintered, and the said ceramic material of said top sheet when sintered having a differential coefficient of expansion of at least 0.8×10 -6 /°C., assembling said second sheets, in underlying relation to said first sheets, and said top sheet in overlying relation to said first sheets, sintering the resultant assembly to form a monolithic ceramic substrate having an internal conductive metallurgy system, the thickness relationship between said first sheets and said top sheet minimizing via to via cracking in said monolithic substrate.
Claim 2
Dependent Claim 248 words
An improved method of fabricating a monolithic sintered MLC substrate for a semiconductor package comprising forming a plurality of first ceramic green sheets of a thickness in the range of 6-9 mils, forming vias in said first sheets filling said vias and imprinting metallurgy redistribution patterns with a conductive metallurgy paste on said first sheets, forming a plurality of second ceramic green sheets, forming vias and imprinting metallurgy patterns with a conductive metallurgy paste on said second sheets, forming a single top ceramic green sheet of ceramic material of a thickness of at least 20% greater than the individual thickness of said first sheets, forming a via pattern in said top sheet wherein at least some vias have a center to center spacing when fired in the range of 7-12 mils, with the via diameter being in the range of 35 to 55% of said center to center via spacing, filling said vias in said top sheet with a conductive metallurgy paste, said metallurgy paste, when sintered, and the said ceramic material of said top sheet when sintered having a differential coefficient of expansion of at least 0.8×10 -6 /°C., assembling said second sheets, in underlying relation to said first sheets, and said top sheet in overlying relation to said first sheets, sintering the resultant assembly to form a monolithic ceramic substrate having an internal conductive metallurgy system, the thickness relationship between said first sheets and said top sheet minimizing via to via cracking in said monolithic substrate.
Claim 3
Dependent Claim 30 words
The method of claim 1 wherein said via pattern includes at least one grid pattern adapted to provide a solder pad configuration for joining a semiconductor by solder bonding techniques.
Claim 4
Dependent Claim 34 words
The method of claim 2 wherein each of said via grid patterns is surrounded by at least 1 row of vias spaced outwardly from said grid pattern adapted to serve as engineering change pads.
Claim 5
Dependent Claim 32 words
The method of claim 1 wherein the diameters of the vias in said top sheet is approximately the same as the diameter of the vias in said first and said second sheets.

References Cited (Backward Citations)

US3189978A Cited
US3726002A Cited
US4047290A Cited
US3999004A Cited
US4109377A Cited
US4189524A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-06-21 1985-12-21 1986-06-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-06-21 1989-12-21 1990-06-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-06-21 1993-12-21 1994-06-22 $7700.00 Window Closed / Lapsed

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