US4336088A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating an improved multi-layer ceramic substrate
Assignee: International Business Machines Corp
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Filing: 1981-04-27
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Granted: 1982-06-22
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Expires: 2001-04-27
Abstract
Abstract A method of fabricating an improved multi-layer ceramic substrate for mounting semiconductor devices having a low incidence of cracks between metal filled surface vias, the substrate constructed with a top ceramic layer having a thickness that is at least 20 percent greater than the underlying sheets that embody a redistribution system.
Inventors
- 👤 Richard J. Hetherington
- 👤 George E. Melvin
- 👤 Stephen A. Milkovich
- 👤 Ernest N. Urfer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:28
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; H10W70/01; H10W70/05; H10W70/095; H10W70/611; H10W70/68; H10W70/685; H05; H05K; H05K1/00; H05K1/02; H05K1/0271; H05K1/0296; H05K1/0298; H05K1/03; H05K1/0306; H05K3/00; H05K3/46; H05K3/4611; H05K3/4626; H05K3/4629; H05K3/4644; H05K3/4673; H05K3/4676; H10W70/62; H10W70/63; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W90/00; H10W90/701; H10W90/721; H10W90/724; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49155; Y10T29/49163
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
248 words
An improved method of fabricating a monolithic sintered MLC substrate for a semiconductor package comprising forming a plurality of first ceramic green sheets of a thickness in the range of 6-9 mils, forming vias in said first sheets filling said vias and imprinting metallurgy redistribution patterns with a conductive metallurgy paste on said first sheets, forming a plurality of second ceramic green sheets, forming vias and imprinting metallurgy patterns with a conductive metallurgy paste on said second sheets, forming a single top ceramic green sheet of ceramic material of a thickness of at least 20% greater than the individual thickness of said first sheets, forming a via pattern in said top sheet wherein at least some vias have a center to center spacing when fired in the range of 7-12 mils, with the via diameter being in the range of 35 to 55% of said center to center via spacing, filling said vias in said top sheet with a conductive metallurgy paste, said metallurgy paste, when sintered, and the said ceramic material of said top sheet when sintered having a differential coefficient of expansion of at least 0.8×10 -6 /°C., assembling said second sheets, in underlying relation to said first sheets, and said top sheet in overlying relation to said first sheets, sintering the resultant assembly to form a monolithic ceramic substrate having an internal conductive metallurgy system, the thickness relationship between said first sheets and said top sheet minimizing via to via cracking in said monolithic substrate.
Claim 2
Dependent Claim
248 words
An improved method of fabricating a monolithic sintered MLC substrate for a semiconductor package comprising forming a plurality of first ceramic green sheets of a thickness in the range of 6-9 mils, forming vias in said first sheets filling said vias and imprinting metallurgy redistribution patterns with a conductive metallurgy paste on said first sheets, forming a plurality of second ceramic green sheets, forming vias and imprinting metallurgy patterns with a conductive metallurgy paste on said second sheets, forming a single top ceramic green sheet of ceramic material of a thickness of at least 20% greater than the individual thickness of said first sheets, forming a via pattern in said top sheet wherein at least some vias have a center to center spacing when fired in the range of 7-12 mils, with the via diameter being in the range of 35 to 55% of said center to center via spacing, filling said vias in said top sheet with a conductive metallurgy paste, said metallurgy paste, when sintered, and the said ceramic material of said top sheet when sintered having a differential coefficient of expansion of at least 0.8×10 -6 /°C., assembling said second sheets, in underlying relation to said first sheets, and said top sheet in overlying relation to said first sheets, sintering the resultant assembly to form a monolithic ceramic substrate having an internal conductive metallurgy system, the thickness relationship between said first sheets and said top sheet minimizing via to via cracking in said monolithic substrate.
Claim 3
Dependent Claim
30 words
The method of claim 1 wherein said via pattern includes at least one grid pattern adapted to provide a solder pad configuration for joining a semiconductor by solder bonding techniques.
Claim 4
Dependent Claim
34 words
The method of claim 2 wherein each of said via grid patterns is surrounded by at least 1 row of vias spaced outwardly from said grid pattern adapted to serve as engineering change pads.
Claim 5
Dependent Claim
32 words
The method of claim 1 wherein the diameters of the vias in said top sheet is approximately the same as the diameter of the vias in said first and said second sheets.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-06-21 | 1985-12-21 | 1986-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-06-21 | 1989-12-21 | 1990-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-06-21 | 1993-12-21 | 1994-06-22 | $7700.00 | Window Closed / Lapsed |