SiC-Si3 N4 Composite system for special heat-resisting ceramic materials and its fabrication method

Claim 2

An SiC-Si 3 N 4 composite system for heat resistant materials, comprising crystals of β-SiC, α-Si 3 N 4 and β-Si 3 N 4 , said α-Si 3 N 4 and β-Si 3 N 4 crystals being surrounded by said β-SiC crystals forming interwoven textures of β-SiC among said α-Si 3 N 4 and β-Si 3 N 4 crystals without chemical bonding to provide micro gaps between said β-SiC and said α-Si 3 N 4 and β-Si 3 N 4 crystals for absorption of thermal stresses.

Claim 3

The composite system of claim 1 wherein the weight ratio of SiC:Si 3 N 4 is in the range of 5%-20%:95%-80%.

Claim 4

The composite system of claim 2 which is fabricated by firing in a nitriding gas atmosphere, a green compact composed of silicon powder and an organic silicon polymer containing structural units selected from the group consisting of: ##STR2## and mixtures thereof, with any one or more of structural units (i)-(iv) forming part of a larger polymeric chain, wherein R 1 is CH 3 , R 2 , R 3 , and R 4 are selected from the group consisting of hydrogen, alkyl, aryl, (CH 3 ) 2 CH--, (C 6 H 5 ) 2 SiH--, (CH 3 ) 3 Si--, and mixtures thereof, k, l, m, and n represent mean number of repetitions of the respective structural units, and in structural unit (iii), M is either a metallic or non-metallic element, R 5 , R 6 , R 7 and R 8 are selected from the group consisting of hydrogen, alkyl, aryl, (CH 3 ) 2 CH--, (C 6 H 5 ) 2 SiH--, (CH 3 ) 3 Si--, and mixtures thereof. and depending on the valency of M, any one or more of R 5 , R 6 , R 7 and R 8 may be absent from the polymeric chain.

Claim 5

The composite system of claim 3 wherein k=1-80, 1=15-350, m=1-80, n=15-350, with the mean molecular weight of the polymer in the range of about 800-20,000.

Claim 6

The composite system of claim 4 wherein M is selected from the group consisting of Si, B, Ti, Fe, Al, Zr, and mixtures thereof.

Claim 7

The composite system of claim 4 wherein said silicon powder has a particle size equal to or less than about 44 microns, and the mixing ratio by weight of silicon powder: organic silicon polymer is in the range of 90%-65%:10%-35%.

Claim 8

The composite system of claim 6 wherein the green compact is fired up to a temperature in the range of 1200° C. to 1800° C.

Claim 9

The composite system of claim 7 wherein: (A) the green compact is initially fired to a temperature above about 300° C. wherein the organic silicon polymer turns to a low viscosity liquid, and substituents R 1 -R 8 of structural units (i)-(iv) escape as volatile compounds, with skeletal components of carbon and silicon becoming amorphous; (B) the compact is fired to a temperature above about 800° C. wherein β-SiC crystals begin to form in the amorphous mixture of silicon and an excess of carbon; (C) the compact is fired to a temperature above about 1,000° C. wherein β-SiC crystal formation is accelerated by reaction of the silicon powder with an excess of carbon, said β-SiC crystals formed in step (C) chemically binding with the β-SiC crystals produced in step (B) in the amorphous structure between the silicon particles; (D) the compact is fired to a temperature above about 1200° C. wherein (1) β-SiC is produced by thermal denaturation of the organic silicon polymer and by reaction of the silicon powder with an excess carbon, and (2) silicon powder not involved in the reaction of (D) (1) starts to react with the nitriding gas to yield Si 3 N 4 , and (E) reaction temperature is raised above the melting point of silicon up to about 1800° C. wherein no silicon particles remain unreacted with nitriding gas in the final fired product, said Si 3 N 4 formed in steps (D) and (E) forming the interwoven texture with β-SiC without chemical linkage.

Claim 10

A process for fabricating an SiC-Si 3 N 4 composite system for heat resistant materials having an interwoven texture of SiC and Si 3 N 4 with micro gaps between SiC and Si 3 N 4 crystals for absorption of thermal stresses, comprising firing in a nitriding gas atmosphere at a temperature of from 1200° C. to 1800° C., a green compact composed of 65% to 90% by weight of silicon powder having individual particle size equal to or less than about 44 microns and 35% to 10% by weight of an organic silicon polymer to produce a final SiC-Si 3 N 4 composite system of 5% to 20% by weight of SiC and 95% to 80% by weight of Si 3 N 4 .

Claim 11

A process for fabricating an SiC-Si 3 N 4 composite system for heat resistant materials having an interwoven texture of SiC and Si 3 N 4 with micro gaps between SiC and Si 3 N 4 crystals for absorption of thermal stresses, comprising firing in a nitriding gas atmosphere at a temperature of from 1200° C. to 1800° C., a green compact composed of 65% to 90% by weight of silicon powder having individual particle size equal to or less than about 44 microns and 35% to 10% by weight of an organic silicon polymer to produce a final SiC-Si 3 N 4 composite system of 5% to 20% by weight of SiC and 95% to 80% by weight of Si 3 N 4 .

Claim 12

The process of claim 9 wherein said organic silicon polymer is of the structure selected from the group consisting of ##STR3## and mixtures thereof, with any one or more of structural units (i)-(iv) forming part of a larger polymeric chain, wherein R 1 is CH 3 , R 2 , R 3 , and R 4 are selected from the group consisting of hydrogen, alkyl, aryl, (CH 3 ) 2 CH--, (C 6 H 5 ) 2 SiH--, (CH 3 ) 3 Si--, and mixtures thereof, k, l, m, and n represent mean number of repetitions of the respective structural units, and in structural unit (iii), M is either a metallic or non-metallic element, R 5 , R 6 , R 7 and R 8 are selected from the group consisting of hydrogen, alkyl, aryl, (CH 3 ) 2 CH--, (C 6 H 5 ) 2 SiH--, (CH 3 ) 3 Si--, and mixtures thereof, and depending on the valency of M, any one or more of R 5 , R 6 , R 7 and R 8 may be absent from the polymeric chain.

Claim 13

The process of claim 10 comprising the steps of (A) initially firing the green compact to a temperature above about 300° C. wherein the organic silicon polymer turns to a low viscosity liquid, substituents R 1 -R 8 of structural formulas (i)-(iv) escape as volatile compounds, and skeletal components of carbon and silicon become amorphous; (B) firing the compact to a temperature above about 800° C. wherein β-SiC crystals begin to form in the amorphous mixture of silicon and an excess of carbon; (C) firing the compact to a temperature above about 1,000° C. wherein β-SiC crystal formation is accelerated by reaction of the silicon powder with an excess of carbon, said β-SiC crystals formed in step (C) chemically binding with the β-SiC crystals produced in step (B) in the amorphous structure between the silicon particles; (D) firing the compact to a temperature above about 1200°0 C. wherein (1) β-SiC is produced by thermal denaturation of the organic silicon polymer and by reaction of the silicon powder with an excess of carbon, and (2) silicon powder not involved in the reaction of (D) (1) starts to react with the nitriding gas to yield Si 3 N 4 , and (E) raising reaction temperature above the melting point of silicon up to about 1800° C. wherein no silicon particles remain unreacted with nitriding gas in the final fired product, said Si 3 N 4 formed in steps (D) and (E) forming the interwoven texture with β-SiC without chemical linkage.