Amplifier using lateral and vertical transistors

Claim 2

In a semiconductor structure having a unitary body of semiconductive material of a first conductivity type, a first plurality of semiconductor regions of a second conductivity type disposed in PN junction forming relation with said semiconductor body, a second plurality of semiconductor regions of the first conductivity type disposed in PN junction forming relation with a number of said plurality of semiconductor regions on the surface thereof remote from said semiconductor body, said first and second plurality of semiconductor regions forming substructures operable as field-effect transistors, forming substructures operable as vertical bipolar transistors of the second conductivity type wherein said semiconductor body serves as the collector region thereof, and forming substructures operable as lateral bipolar transistors of the second conductivity type, an amplifier comprising: first and second terminals for receiving an operating potential therebetween, said first terminal being connected to said semiconductor body; a third terminal for receiving an input signal; a fourth terminal for providing output signal; a vertical bipolar transistor having respective emitter, base, and collector electrodes, the base electrode of said vertical bipolar transistor being connected to said third terminal; and a lateral bipolar transistor having respective emitter, base and collector electrodes, the base electrode of said lateral bipolar transistor being connected to the emitter electrode of said vertical bipolar transistor, the emitter electrode of said lateral bipolar transistor being connected to said second terminal, the collector electrode of said lateral transistor being connected to said fourth terminal.

Claim 3

In a semiconductor structure having a unitary body of semiconductive material of a first conductivity type, a first plurality of semiconductor regions of a second conductivity type disposed in PN junction forming relation with said semiconductor body, a second plurality of semiconductor regions of the first conductivity type disposed in PN junction forming relation with a number of said first plurality of semiconductor regions on the surface thereof remote from said semiconductor body, said first and second plurality of semiconductor regions forming substructures operable as field effect transistors having a channel of the second conductivity type, forming substructures operable as vertical bipolar transistors of the second conductivity type wherein said semiconductor body serves as the collector region thereof, and forming substructures operable as lateral bipolar transistors of the second conductivity type, an amplifier comprising: a field effect transistor having respective gate, drain and source electrodes; a vertical bipolar transistor having respective emitter, base and collector electrodes, the base electrode of said vertical bipolar transistor being connected to the drain electrode of said field effect transistor; a lateral bipolar transistor having respective emitter, base, and collector electrodes, the base electrode of said lateral transistor being connected to the emitter electrode of said vertical transistor; first and second terminals for receiving an operating potential therebetween said first terminal being connected to said semiconductor body, the source electrode of said field effect transistor being connected to said first terminal, the emitter electrode of said lateral transistor being connected to said second terminal; a third terminal for receiving an input signal to which the gate electrode of said field effect transistor is connected; and a fourth terminal for providing output signal to which the collector electrode of said lateral bipolar transistor is connected.

Claim 4

In a semiconductor structure having a unitary body of semiconductive material of a first conductivity type, a first plurality of semiconductor regions of a second conductivity type disposed in PN junction forming relation with said semiconductor body, a second plurality of semiconductor regions of the first conductivity type disposed in PN junction forming relation with a number of said first plurality of semiconductor regions on the surface thereof remote from said semiconductor body, said first and second plurality of semiconductor regions forming substructures operable as field effect transistors having a channel of the second conductivity type, forming substructures operable as vertical bipolar transistors of the second conductivity type wherein said semiconductor body serves as the collector region thereof, and forming substructures operable as lateral bipolar transistors of the second conductivity type, an amplifier comprising: a field effect transistor having respective gate, drain and source electrodes; a vertical bipolar transistor having respective emitter, base and collector electrodes, the base electrode of said vertical bipolar transistor being connected to the drain electrode of said field effect transistor; a lateral bipolar transistor having respective emitter, base, and collector electrodes, the base electrode of said lateral transistor being connected to the emitter electrode of said vertical transistor; first and second terminals for receiving an operating potential therebetween said first terminal being connected to said semiconductor body, the source electrode of said field effect transistor being connected to said first terminal, the emitter electrode of said lateral transistor being connected to said second terminal; a third terminal for receiving an input signal to which the gate electrode of said field effect transistor is connected; and a fourth terminal for providing output signal to which the collector electrode of said lateral bipolar transistor is connected.

Claim 5

An amplifier according to claim 2 further comprising: a second lateral transistor having respective emitter, base, and collector electrodes, the respective base and emitter electrodes of said second lateral transistor being connected to the respective base and emitter electrodes of said first lateral transistor, the collector of said second lateral transistor being connected to the base electrode of said vertical transistor.

Claim 6

An amplifier according to claim 2 or 3 further comprising: a third lateral transistor having respective emitter, base, and collector electrodes, said third lateral transistor having an interconnection between base and collector electrodes thereof, said interconnection being directly connected to the base electrode of said first lateral transistor, the emitter electrode of said third lateral transistor being connected to the emitter electrode of said first lateral transistor.

Claim 7

In a semiconductor structure having a unitary body of semiconductive material of a first conductivity type, a first plurality of semiconductor regions of a second conductivity type disposed in PN junction forming relation with said semiconductor body, a second plurality of semiconductor regions of the first conductivity type disposed in PN junction forming relation with a number of said first plurality of semiconductor regions on the surface thereof remote from said semiconductor body, said first and second plurality of semiconductor regions forming substructures operable as field effect transistors, forming substructures operable as vertical bipolar transistors of the second conductivity type wherein said semiconductor body serves as the collector region thereof, and forming substructures operable as lateral bipolar transistors of the second conductivity type an amplifier comprising: first and second terminals for receiving an operating potential therebetween, said first terminal being connected to said semiconductor body; a third terminal for receiving an input signal; a fourth terminal for providing output signal; a vertical bipolar transistor having respective emitter, base, and collector electrodes, the base electrode of said vertical bipolar transistor being connected to said third terminal; first and second lateral bipolar transistors having respective emitter, base, and collector electrodes; and means connecting said first and second lateral bipolar transistors for operation as a current mirror amplifier having an input node, an output node, and a common node, said input node connected to the emitter electrode of said vertical bipolar transistor, said common node connected to said second terminal, and said output node connected to said fourth terminal.

Claim 8

In a semiconductor structure having a unitary body of semiconductive material of a first conductivity type, a first plurality of semiconductor regions of a second conductivity type disposed in PN junction forming relation with said semiconductor body, a second plurality of semiconductor regions of the first conductivity type disposed in PN junction forming relation with a number of said first plurality of semiconductor regions on the surface thereof remote from said semiconductor body, said first and second plurality of semiconductor regions forming substructures operable as field effect transistors, forming substructures operable as vertical bipolar transistors of the second conductivity type wherein said semiconductor body serves as the collector region thereof, and forming substructures operable as lateral bipolar transistors of the second conductivity type an amplifier comprising: first and second terminals for receiving an operating potential therebetween, said first terminal being connected to said semiconductor body; a third terminal for receiving an input signal; a fourth terminal for providing output signal; a vertical bipolar transistor having respective emitter, base, and collector electrodes, the base electrode of said vertical bipolar transistor being connected to said third terminal; first and second lateral bipolar transistors having respective emitter, base, and collector electrodes; and means connecting said first and second lateral bipolar transistors for operation as a current mirror amplifier having an input node, an output node, and a common node, said input node connected to the emitter electrode of said vertical bipolar transistor, said common node connected to said second terminal, and said output node connected to said fourth terminal.

Claim 9

An amplifier according to claim 5 wherein said means connecting said first and second lateral bipolar transistors for operation as a current mirror amplifier comprises: a connection from the collector electrode of said first lateral bipolar transistor to the emitter electrode of said vertical bipolar transistor; a connection between the respective emitter electrodes of said first and second lateral bipolar transistors to said second terminal; a connection from the collector electrode of said second lateral bipolar transistor to said third terminal; and means connecting the base electrode of said first lateral bipolar transistor to the collector electrode thereof for conditioning said first lateral bipolar transistor to operate as a current-to-voltage converter responsive to an input current supplied between said first and second terminals.

Claim 10

An amplifier according to claim 6 wherein said means connecting the base electrode of said first lateral bipolar transistor to the collector electrode thereof is a direct connection without substantial intervening impedance.

Claim 11

In a semiconductor structure having a unitary body of a semiconductive material of a first conductivity type, a first plurality of semiconductor regions of a second conductivity type disposed in PN junction forming relation with said semiconductor body, a second plurality of semiconductor regions of the first conductivity type disposed in PN junction forming relation with a number of said first plurality of semiconductor regions on the surface thereof remote from said semiconductor body, said first and second plurality of semiconductor regions forming substructures operable as field effect transistors having a channel of the second conductivity type, forming substructures operable as vertical bipolar transistors of the second conductivity type wherein said semiconductor body serves as the collector region thereof, and forming substructures operable as lateral bipolar transistors of the second conductivity type, an amplifier comprising: first and second terminals for receiving an operating potential therebetween, said first terminal being connected to said semiconductor body; third and fourth terminals for receiving an input signal therebetween; current supply means connected to said first terminal for supplying a substantially constant current to a first circuit node; first and second field effect transistors having respective gate, drain, and source electrodes; means connecting said first and second field effect transistors as a differential amplifier, connected to said first circuit node and responsive to said input signal between said third and fourth terminals for providing differential signal currents at respective second and third circuit nodes; first and second lateral bipolar transistors having respective emitter, base, and collector electrodes; and means connecting said first and second lateral bipolar transistors as a balanced-to-single-ended converter, connected to said second terminal and responsive to the respective differential signal currents at said second and third circuit nodes respectively, for providing a single-ended output signal at said third circuit node, which means includes a vertical bipolar transistor having base and emitter electrodes coupled between said second circuit node and said first lateral bipolar transistor.

Claim 12

In a semiconductor structure having a unitary body of a semiconductive material of a first conductivity type, a first plurality of semiconductor regions of a second conductivity type disposed in PN junction forming relation with said semiconductor body, a second plurality of semiconductor regions of the first conductivity type disposed in PN junction forming relation with a number of said first plurality of semiconductor regions on the surface thereof remote from said semiconductor body, said first and second plurality of semiconductor regions forming substructures operable as field effect transistors having a channel of the second conductivity type, forming substructures operable as vertical bipolar transistors of the second conductivity type wherein said semiconductor body serves as the collector region thereof, and forming substructures operable as lateral bipolar transistors of the second conductivity type, an amplifier comprising: first and second terminals for receiving an operating potential therebetween, said first terminal being connected to said semiconductor body; third and fourth terminals for receiving an input signal therebetween; current supply means connected to said first terminal for supplying a substantially constant current to a first circuit node; first and second field effect transistors having respective gate, drain, and source electrodes; means connecting said first and second field effect transistors as a differential amplifier, connected to said first circuit node and responsive to said input signal between said third and fourth terminals for providing differential signal currents at respective second and third circuit nodes; first and second lateral bipolar transistors having respective emitter, base, and collector electrodes; and means connecting said first and second lateral bipolar transistors as a balanced-to-single-ended converter, connected to said second terminal and responsive to the respective differential signal currents at said second and third circuit nodes respectively, for providing a single-ended output signal at said third circuit node, which means includes a vertical bipolar transistor having base and emitter electrodes coupled between said second circuit node and said first lateral bipolar transistor.

Claim 13

An amplifier according to claim 8 wherein said means connecting said first and second field effect transistors as a differential amplifier comprises: a connection between the respective source electrodes of said first and second field effect transistors to said first circuit node; a respective connection from each said third and fourth terminal to the respective gate electrode of said first and second field effect transistors; a respective connection from each drain electrode of said first and second field effect transistors to said second and third circuit nodes respectively.

Claim 14

An amplifier according to claim 8 wherein said means connecting said first and second lateral bipolar transistors as a balanced-to-single-ended converter comprises: a connection from the collector electrode of said first lateral bipolar transistor to said second circuit node; means for connecting the respective emitter electrodes of said first and second lateral bipolar transistors to said second terminal; a connection from the collector electrode of said second lateral bipolar transistor to said third circuit node; means including said vertical bipolar transistor connecting the base electrode of said first lateral bipolar transistor to said second circuit node for conditioning said first lateral bipolar transistor to operate as a current-to-voltage converter responsive to an input current supplied between said first and second terminals.

Claim 15

An amplifier according to claim 10 wherein said means connecting the base electrode of said first lateral bipolar transistor to to said second circuit node includes respective means for connecting the base electrode of said vertical bipolar transistor to the collector electode of said first lateral bipolar transistor and for connecting the emitter electrode of said vertical bipolar transistor to the base electrode of said first lateral bipolar transistor.