Semiconductor device with a thermal protective device

Claim 2

A Darlington circuit comprising a first transistor, a second transistor and a thermally sensitive four region semiconductor switching device, said thermally sensitive four region switching device being connected electrically in a series circuit relationship between base and emitter regions of the first and second transistors respectively and said thermally sensitive four region switching device being in physical and thermal contact with a predetermined portion of one of said transistors.

Claim 3

The Darlington circuit of claim 1 in which the thermally sensitive four region semiconductor switching device is in physical and thermal contact with a predetermined portion of said first transistor.

Claim 4

The Darlington circuit of claim 1 in which the thermally sensitive four region semiconductor switching device is in physical and thermal contact with a predetermined portion of said second transistor.

Claim 5

The Darlington circuit of claim 2 in which the physical and thermal contact between the thermally sensitive four region semiconductor switching device and the first transistor is effected by having the anode electrode of the switching device in physical contact with the base electrode of the first transistor.

Claim 6

The Darlington circuit of claim 3 in which the physical and thermal contact between the thermally sensitive four region semiconductor switching device and the second transistor is effected by having the cathode electrode of the switching device in physical contact with the emitter electrode of the second transistor.

Claim 7

The Darlington circuit of claim 1 in which the first and second transistors are contained within a single body of semiconductor material.

Claim 8

The Darlington circuit of claim 1 in which the semiconductor material is silicon.

Claim 9

A semiconductor device with a thermal protective device comprising: a plurality of transistors forming a Darlington configuration circuit and a semiconductor thermally sensitive switching element having a PNPN four layer structure, said switching element constituting said thermal protective device, said switching element being electrically connected between a base terminal and an emitter terminal of said Darlington configuration circuit while being thermally and physically coupled to at least an output transistor of said plurality of transistors, said switching element being changed from its high impedance state to its low impedance state when the switching element senses a temperature change in said output transistor toward a predetermined temperature, said semiconductor thermally sensitive switching element being adapted to be conducting upon the temperature of said output transistor reaching its permissible junction temperature.

Claim 10

A semiconductor device with a thermal protective device comprising: a plurality of transistors forming a Darlington configuration circuit and a semiconductor thermally sensitive switching element having a PNPN four layer structure, said switching element constituting said thermal protective device, said switching element being electrically connected between a base terminal and an emitter terminal of said Darlington configuration circuit while being thermally and physically coupled to at least an output transistor of said plurality of transistors, said switching element being changed from its high impedance state to its low impedance state when the switching element senses a temperature change in said output transistor toward a predetermined temperature, said semiconductor thermally sensitive switching element being adapted to be conducting upon the temperature of said output transistor reaching its permissible junction temperature.

Claim 11

A semiconductor device comprising: at least a first and a second transistor within a single body of semiconductor material, each of said first and second transistors having an independent emitter region and an independent base region and a common collector region, the base region of said first transistor being electrically connected to the emitter region of said second transistor and the emitter region of said first transistor being electrically connected to the base region of said second transistor, and a semiconductor thermally sensitive switching device, said switching device comprising at least four regions of alternate type semiconductivity, said switching device being electrically connected in a series circuit relationship between the base region of said first transistor and the emitter region of said second transistor, said switching device being thermally and physically connected to said second transistor, said switching device changing from a high impedance state to a low impedance state when sensing said second transistor reaching a predetermined temperature, said switching device being adapted to be conducting when said second transistor reaches its junction temperature.

Claim 12

A semiconductor device comprising: at least a first and a second transistor within a single body of semiconductor material, each of said first and second transistors having an independent emitter region and an independent base region and a common collector region, the base region of said first transistor being electrically connected to the emitter region of said second transistor and the emitter region of said first transistor being electrically connected to the base region of said second transistor, and a semiconductor thermally sensitive switching device, said switching device comprising at least four regions of alternate type semiconductivity, said switching device being electrically connected in a series circuit relationship between the base region of said first transistor and the emitter region of said second transistor, said switching device being thermally and physically connected to said second transistor, said switching device changing from a high impedance state to a low impedance state when sensing said second transistor reaching a predetermined temperature, said switching device being adapted to be conducting when said second transistor reaches its junction temperature.