DC Restore circuit for charge coupled devices

Claim 2

In a detector array system responsive to a scene and having a plurality of CCD data channels each receiving charges derived from a different line of detectors of a detector array, a system for establishing data charge packets transferred from each of said CCD channels to a value referenced to a common DC level comprising: first means for applying cold reference energy to said detector array; and a plurality of correction circuits including for each of said data channels: a split-off channel coupled to said data channel and including gating means and charge storage means, said gating means transferring a selected charge packet to said charge storage means representative of the DC response of said line of detectors when said cold reference energy is applied to said detector array, said charge storage means providing a correction voltage, and charge generating means coupled between said charge storage means and said data channel for transferring a correction charge representative of the difference between said common DC level and said correction voltage to said data charge packets being transferred along said data channel so that said data charge packets are referenced to said common DC level.

Claim 3

The combination of claim 1 in which said first means includes scanning means having a scan period followed by a flyback period for applying energy from said scene to said detector array during a majority of said scan period and applying said cold reference energy to said detector array during a first portion of said scan period, said charge storage means including means for transferring said selected charge packet to said storage means during the first portion of said scan period and storing said selected charge during the majority of said scan period for providing said correction voltage.

Claim 4

The combination of claim 2 in which said first means further includes a cold surface for said scanning means to scan during the first portion of said scan period for providing said cold reference energy.

Claim 5

The combination of claim 3 further including channel driving means coupled to each of said data channels for transferring said data charge packets therealong at a rate in synchronism with said scanning means so that data charge packets transferred along said channel receive charges from each detector of said line of detectors from the same point of said scene or of said cold surface, said correction voltage representing the DC level of an integrated charge from each of said line of detectors when said data charge packets include charges derived from each detector of said line of detectors receiving energy from said cold surface.

Claim 6

The combination of claim 1 in which said charge generating means includes a substrate, means for forming a potential well in said substrate having a charge capacity referenced between said correction voltage and said common DC level, and means for repetitively providing a charge to said well for being applied to each data charge packet transferred along said data channel.

Claim 7

The combination of claim 5 in which said means for repetitively providing a charge includes a diffusion region, a reference electrode positioned adjacent to said substrate and between said diffusion region and said potential well, a source of pulses coupled to said reference electrode for alternately applying a low potential and said common DC level to said electrode, and a fill electrode positioned adjacent to said substrate and between said reference electrode and said well for alternately applying a low potential for increasing the well capacity to receive charges when said reference electrode is at said low potential and for providing a high potential when said reference electrode is at said common DC level so as to establish said correction charges in said well.

Claim 8

The combination of claim 6 in which said system includes a cold reference surface and said scanning means has a scan period and a flyback period for applying energy from said cold reference surface to said detector array during a first portion of said scan period and energy from said scene to said detector array during a second portion of said scan period, said gating means including means for transferring said selected charge to said storage means during the first portion of said scan period for storing said selected charge packet during the second portion of said scan period for providing said correction voltage.

Claim 9

The combination of claim 5 in which said split-off channel includes a substrate; said gating means includes transfer electrode means positioned adjacent to said substrate for transferring a selected charge packet from said data channel; and said charge storage means includes a first diffusion region in said substrate for storing said selected charge and providing said correction voltage, a second diffusion region in said substrate, and a reset electrode positioned adjacent to said substrate and between said first and second diffusion regions for removing the selected charge from said first diffusion region prior to transferring the next selected charge packet from said data channel.

Claim 14

The combination of claim 10 in which said scene energy is derived from a scene and said cold reference energy is derived from a cold reference source and further including driving means coupled to said plurality of data channels and synchronized with said scanning means so that in each data channel, each data charge packet and reference charge packet represents an integral of detector current from each detector of said corresponding column of detectors responding to the same resolution spot of said respective scene and said cold reference source.

Claim 15

A DC restore circuit for restoring the DC level of data charge packets in a CCD data channel receiving from detector means, said data charge packets and reference charge packets representing a DC level of said detector means in response to cold reference energy, comprising: a substrate material; a split-off channel including a first diffusion region on said substrate material first and second gating electrodes positioned adjacent to said substrate for gating said reference charge packets from said data channel into said first diffusion region and providing a correction voltage; a correction electrode and a fill electrode positioned adjacent to said substrate material, said correction electrode being responsive to said correction voltage for forming a first potential well, said first potential well being coupled to said data channel; a reference electrode positioned adjacent to said substrate and adjacent to said fill electrode; a second diffusion region positioned adjacent to said substrate and adjacent to said reference electrode; a source of fill pulses coupled to said fill electrode for periodically forming a second potential well in said substrate connected to said first potential well, said second potential well receiving charges from said second diffusion region in response to said fill pulses; and a source of reference pulses coupled to said reference electrode for providing a low voltage at a reference level concurrent with a trailing edge of one of said fill pulses for transferring excess charge from said second potential well to said second diffusion region for establishing a correction charge in said first potential well for being transferred to a data charge packet in said data channel.

Claim 16

A DC restore circuit for restoring the DC level of data charge packets in a CCD data channel receiving from detector means, said data charge packets and reference charge packets representing a DC level of said detector means in response to cold reference energy, comprising: a substrate material; a split-off channel including a first diffusion region on said substrate material first and second gating electrodes positioned adjacent to said substrate for gating said reference charge packets from said data channel into said first diffusion region and providing a correction voltage; a correction electrode and a fill electrode positioned adjacent to said substrate material, said correction electrode being responsive to said correction voltage for forming a first potential well, said first potential well being coupled to said data channel; a reference electrode positioned adjacent to said substrate and adjacent to said fill electrode; a second diffusion region positioned adjacent to said substrate and adjacent to said reference electrode; a source of fill pulses coupled to said fill electrode for periodically forming a second potential well in said substrate connected to said first potential well, said second potential well receiving charges from said second diffusion region in response to said fill pulses; and a source of reference pulses coupled to said reference electrode for providing a low voltage at a reference level concurrent with a trailing edge of one of said fill pulses for transferring excess charge from said second potential well to said second diffusion region for establishing a correction charge in said first potential well for being transferred to a data charge packet in said data channel.