US4331707A
Expired / Lapsed
US
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Process for thin film deposition of cadmium sulfide
Assignee: EXON RESEARCH AND ENGINEERING Co A CORP OF
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Filing: 1980-10-15
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Granted: 1982-05-25
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Expires: 2000-10-15
Abstract
Abstract The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O -2 for S -2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.
Inventors
- 👤 H. Paul Muruska
- 👤 Joseph L. Sansregret
- 👤 Archie R. Young
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:23
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C01; C01G; C01G11/00; C01G11/02; C23C18/1229; C23C18/1245; C23C18/125; C23C18/1258; C23C18/1279; C23C18/1291; H; H10; H10F; H10F71/00; H10F71/125; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
110 words
A method for constructing films of cadmium sulfide comprising: providing a substrate; heating said substrate to a temperature ranging from about 450° C. to about 540° C.; providing a solution comprising at least one cadmium salt in water, methanol or a mixture thereof; providing an indium salt in said solution to improve conductivity of the final film; atomizing said solution; contacting said heated substrate with said atomized solution to form a layer of cadmium oxide; annealing said oxide layer at a temperature ranging from about 350° C. to about 500° C. in a gaseous sulfur-containing compound capable of undergoing a sulfur exchange with said oxide layer to form cadmium sulfide.
Claim 2
Independent Claim
110 words
A method for constructing films of cadmium sulfide comprising: providing a substrate; heating said substrate to a temperature ranging from about 450° C. to about 540° C.; providing a solution comprising at least one cadmium salt in water, methanol or a mixture thereof; providing an indium salt in said solution to improve conductivity of the final film; atomizing said solution; contacting said heated substrate with said atomized solution to form a layer of cadmium oxide; annealing said oxide layer at a temperature ranging from about 350° C. to about 500° C. in a gaseous sulfur-containing compound capable of undergoing a sulfur exchange with said oxide layer to form cadmium sulfide.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said cadmium salt comprises cadmium nitrate, cadmium acetate or a mixture thereof.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said solution comprises cadmium nitrate in water.
Claim 5
Dependent Claim
19 words
The method of claim 3 wherein said solution comprises 0.1 M cadmium nitrate, Cd(NO 3 ) 2 in water.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said solution comprises cadmium nitrate in methanol.
Claim 7
Dependent Claim
19 words
The method of claim 5 wherein said solution comprises 0.1 M cadmium nitrate Cd(NO 3 ) 2 in methanol.
Claim 8
Dependent Claim
13 words
The method of claim 1 wherein said solution comprises cadmium acetate in methanol.
Claim 9
Dependent Claim
23 words
The method of claim 7 wherein said solution comprises 0.1 M cadmium acetate, Cd(C 2 H 3 O 2 ) 2 in methanol.
Claim 10
Dependent Claim
13 words
The method of claim 1 wherein said solution comprises cadmium acetate in water.
Claim 11
Dependent Claim
27 words
The method of claim 9 wherein said solution comprises a concentration of about 0.1 M cadmium acetate, Cd(C 2 H 3 O 2 ) 2 in water.
Claim 12
Dependent Claim
19 words
The method of claim 1 wherein up to 10 mole & InCl 3 is added to the starting solution.
Claim 13
Dependent Claim
19 words
The method of claim 1 wherein said solution is atomized at a rate of less than about 6 ml/minute.
Claim 14
Dependent Claim
14 words
The method of claim 1 wherein said gaseous sulfur-containing compound comprises H 2 S.
Claim 15
Dependent Claim
21 words
The method of claim 13 wherein said gaseous sulfur-containing compound is contained in a mixture of H 2 S and nitrogen.
Claim 16
Dependent Claim
20 words
The method of claim 14 wherein said mixture comprises about 20 percent by weight of H 2 S in nitrogen.
Claim 17
Dependent Claim
34 words
The method set forth in claim 1 wherein said contacting continues for a time sufficient to form a layer of cadmium oxide having a thickness ranging from about 1 micron to about 3 microns.
Claim 18
Dependent Claim
28 words
The method set forth in claim 16 wherein said layer of cadmium sulfide is further characterized as having a crystallite grain size in excess of about 3 microns.
Claim 19
Dependent Claim
36 words
The method set forth in claim 1 wherein said annealing continues for a period ranging from about 30 minutes to about 8 hours in a mixture comprising 20% by weight of H 2 S in nitrogen.
Claim 20
Dependent Claim
12 words
The method set forth in claim 1 wherein said substrate comprises glass.
Claim 21
Dependent Claim
19 words
The method set forth in claim 1 wherein said substrate comprises glass having a layer of tin oxide thereon.
Claim 22
Dependent Claim
25 words
The method set forth in claim 20 wherein said layer of cadmium sulfide is further characterized as having a resistivity less than about 60 Ω-cm.
Claim 23
Dependent Claim
19 words
The method set forth in claim 1 wherein said substrate comprises glass having a layer of indium oxide thereon.
References Cited (Backward Citations)
US4095004A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-24 | 1985-11-23 | 1986-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-24 | 1989-11-23 | 1990-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-24 | 1993-11-23 | 1994-05-25 | $7700.00 | Window Closed / Lapsed |