Process for low temperature stoichiometric recrystallization of compound semiconductor films

Claim 1

A vapor phase controlled processing method for producing recrystallized MX films with improved photoelectric properties where M is a metal taken from Group II or III Of the periodic table and X is a high vapor pressure element taken from Group V or VI of the periodic table comprising the steps of: (a) depositing an MX compound onto an amorphous substrate taken from the group comprised of soda-lime glass, soda-lime glass overcoated with ITO, sapphire, borosilicate glass, and fused silica via physical vapor deposition to form a thin film; (b) placing said film into a reaction chamber equipped with a means for introducing alternatively an inert and reactive gaseous atmosphere; (c) raising the temperature of said film in said chamber to its recrystallization temperatures while purging said chamber with an inert gas; (d) passing a reactive atmosphere of XH n where n may be 2 or 3 and H 2 through said chamber whereby a vapor pressure ratio is induced and maintained at the MX compound stoichiometric level while maintaining said recrystallization temperature over a period ranging from 5 to 50 minutes; and (e) subsequently cooling said film by reintroducing an inert gas until the temperature of said film has returned to room temperature.