US4323719A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated solar cells and shunting diodes
Assignee: Unisearch Ltd
•
Filing: 1980-08-22
•
Granted: 1982-04-06
•
Expires: 2000-08-22
Abstract
Abstract A method of connecting a shunting diode in parallel with a solar cell for the purpose of improving the tolerance of an array of solar cells to mismatch in cell output, whether caused by physical differences in the cells, cell breakage, or the effect of shading, is disclosed. Also disclosed is a method of forming a plurality of interconnected solar cells on a single sheet of semiconductor material, wherein if required, each cell in the array of cells may be shunted by a diode.
Inventors
- 👤 Martin A. Green
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:29
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/12; H10F19/00; H10F19/20; H10F19/50; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
242 words
A solar cell with integral shunting diode, comprising a wafer of semiconductor substrate material having top and bottom metal contact layers having at least some contact with said substrate either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein said layer is nominally divided into three contiguous regions including a shunting or bypass diode region and a main cell region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, said isolation region comprises a portion of the substrate which is separated from each of said top and bottom metal contacts by an intermediate layer of diffent dopant type or an insulating layer, and said bypass diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirecty in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said bypass diode is in electrical communication with said main cell by means of a narrow conductive path joining said bypass diode with said main cell.
Claim 2
Dependent Claim
242 words
A solar cell with integral shunting diode, comprising a wafer of semiconductor substrate material having top and bottom metal contact layers having at least some contact with said substrate either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein said layer is nominally divided into three contiguous regions including a shunting or bypass diode region and a main cell region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, said isolation region comprises a portion of the substrate which is separated from each of said top and bottom metal contacts by an intermediate layer of diffent dopant type or an insulating layer, and said bypass diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirecty in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said bypass diode is in electrical communication with said main cell by means of a narrow conductive path joining said bypass diode with said main cell.
Claim 3
Independent Claim
270 words
A method of manufacturing a solar cell with integral shunting diode, comprising forming top and bottom metal contact layers on a wafer of semiconductor substrate material wherein said metal layers have at least some contact with said substrate either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein the formation of metal contact layers and layers of different dopant type or an insulating layers is controlled such that said cell is nominally divided into three contiguous regions including a shunting of bypass diode region and a main cell region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer., said isolation region comprises a portion of the substrate which is separated from each of said top and bottom metal contacts by an intermediate layer of different dopant type or an insulating layer, and said bypass diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said bypass diode is in electrical communication with said main cell by means of a conductive path joining said bypass diode with said main cell.
Claim 4
Independent Claim
270 words
A method of manufacturing a solar cell with integral shunting diode, comprising forming top and bottom metal contact layers on a wafer of semiconductor substrate material wherein said metal layers have at least some contact with said substrate either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein the formation of metal contact layers and layers of different dopant type or an insulating layers is controlled such that said cell is nominally divided into three contiguous regions including a shunting of bypass diode region and a main cell region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer., said isolation region comprises a portion of the substrate which is separated from each of said top and bottom metal contacts by an intermediate layer of different dopant type or an insulating layer, and said bypass diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said bypass diode is in electrical communication with said main cell by means of a conductive path joining said bypass diode with said main cell.
Claim 5
Dependent Claim
234 words
An integrated array of a plurality of solar cells on a single sheet of semiconductor substrate material, comprising a continuous sheet of said substrate having top and bottom metal contact layers having contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein each said cell is nominally divided into three contiguous regions including a main cell region and a shorting or series interconnection region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate having only one metal contact and an underlying layer of different dopant type or an insulating layer, both of which are contiguous with the corresponding metal contact and intermediate layer of different dopant type or insulating layer in said main cell region, and said shorting or series interconnection region comprises a portion of the substrate in contact with both top and bottom metal contacts, one of which metal contacts is also in contact with the main cell region of the next adjacent cell.
Claim 6
Dependent Claim
234 words
An integrated array of a plurality of solar cells on a single sheet of semiconductor substrate material, comprising a continuous sheet of said substrate having top and bottom metal contact layers having contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein each said cell is nominally divided into three contiguous regions including a main cell region and a shorting or series interconnection region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate having only one metal contact and an underlying layer of different dopant type or an insulating layer, both of which are contiguous with the corresponding metal contact and intermediate layer of different dopant type or insulating layer in said main cell region, and said shorting or series interconnection region comprises a portion of the substrate in contact with both top and bottom metal contacts, one of which metal contacts is also in contact with the main cell region of the next adjacent cell.
Claim 7
Independent Claim
258 words
A method of forming a plurality of integrated solar cells on a single sheet of semiconductor substrate material, comprising forming top and bottom metal contact layers on said substrate wherein said metal layers have at least some contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein the formation of metal contact layers and layer of different dopant type or insulating layers is controlled such that each said cell is nominally divided into three contiguous regions including a main cell region and a shorting or series interconnection region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate having only one metal contact and an underlying layer of different dopant type or an insulating layer, both of which are contiguous with the corresponding metal contact and intermediate layer of different dopant type or insulating layer in said main cell region, and said shorting or series interconnection region comprises a portion of the substrate in contact with both top and bottom metal contacts, one of which metal contacts is also in contact with the main cell region of the next adjacent cell.
Claim 8
Independent Claim
258 words
A method of forming a plurality of integrated solar cells on a single sheet of semiconductor substrate material, comprising forming top and bottom metal contact layers on said substrate wherein said metal layers have at least some contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein the formation of metal contact layers and layer of different dopant type or insulating layers is controlled such that each said cell is nominally divided into three contiguous regions including a main cell region and a shorting or series interconnection region separated by an intermediate isolation region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate having only one metal contact and an underlying layer of different dopant type or an insulating layer, both of which are contiguous with the corresponding metal contact and intermediate layer of different dopant type or insulating layer in said main cell region, and said shorting or series interconnection region comprises a portion of the substrate in contact with both top and bottom metal contacts, one of which metal contacts is also in contact with the main cell region of the next adjacent cell.
Claim 9
Dependent Claim
329 words
An integrated array of a plurality of solar cells on a single sheet of semiconductor substrate material, with each cell in the array shunted by a diode, comprising a continuous sheet of said substrate having top and bottom metal contact layers having contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein each said cell is nominally divided into several regions including contiguous shunting diode, isolation, and main cell regions, with the isolation region being intermediate the said main cell and shunting diode regions, and a separate shorting or series interconnection region spaced and electrically isolated from the shunting diode region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate with both top and bottom metal contacts isolated from said substrate by means of an intermediate layer of different dopant types or an insulating layer, said shunting diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said shunting diode is in electrical communication with said main cell by means of a conductive path joining said shunting diode with said main cell, and said shorting or series interconnection region comprises a portion of the substrate in contact with both the top and bottom metal contacts, one of which metal contacts is also in communication with the main cell region of the next adjacent cell.
Claim 10
Dependent Claim
329 words
An integrated array of a plurality of solar cells on a single sheet of semiconductor substrate material, with each cell in the array shunted by a diode, comprising a continuous sheet of said substrate having top and bottom metal contact layers having contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer, wherein each said cell is nominally divided into several regions including contiguous shunting diode, isolation, and main cell regions, with the isolation region being intermediate the said main cell and shunting diode regions, and a separate shorting or series interconnection region spaced and electrically isolated from the shunting diode region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate with both top and bottom metal contacts isolated from said substrate by means of an intermediate layer of different dopant types or an insulating layer, said shunting diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said shunting diode is in electrical communication with said main cell by means of a conductive path joining said shunting diode with said main cell, and said shorting or series interconnection region comprises a portion of the substrate in contact with both the top and bottom metal contacts, one of which metal contacts is also in communication with the main cell region of the next adjacent cell.
Claim 11
Independent Claim
352 words
A method of forming an integrated array of a plurality of solar cells on a single sheet of semi-conductor material with each cell in the array shunted by a diode, comprising forming top and bottom metal contact layers on said substrate wherein said metal layers have contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer wherein the formation of metal contact layers and layer of different dopant type or insulating layers is controlled such that each said cell is nominally divided into several regions including contiguous shunting diode, isolation, and main cell regions, with the isolation region being intermediate the said main cell and shunting diode regions, and a separate shorting or series interconnection region spaced and electrically isolated from the shunting diode region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate with both top and bottom metal contacts isolated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, said shunting diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said shunting diode is in electrical communication with said main cell by means of an conductive path joining said shunting diode with said main cell, and said shorting or series interconnection region comprises a portion of the substrate in contact with both the top and bottom metal contacts, one of which metal contacts is also in communication with the main cell region of the next adjacent cell.
Claim 12
Independent Claim
352 words
A method of forming an integrated array of a plurality of solar cells on a single sheet of semi-conductor material with each cell in the array shunted by a diode, comprising forming top and bottom metal contact layers on said substrate wherein said metal layers have contact with said substrate at spaced intervals, either directly or indirectly through an intermediate layer of different dopant type or an insulating layer wherein the formation of metal contact layers and layer of different dopant type or insulating layers is controlled such that each said cell is nominally divided into several regions including contiguous shunting diode, isolation, and main cell regions, with the isolation region being intermediate the said main cell and shunting diode regions, and a separate shorting or series interconnection region spaced and electrically isolated from the shunting diode region, wherein said main cell region comprises a portion of the substrate having top and bottom metal contacts with the intermediate layer of different dopant type or insulating layer separating one of said metal contacts from said substrate, and said main cell region is contiguous with the shorting region of the next adjacent cell, said isolation region, adjacent said main cell region, comprises a portion of the substrate with both top and bottom metal contacts isolated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, said shunting diode region comprises a portion of the substrate having top and bottom metal contacts, one of which is either directly or indirectly in contact with said substrate and the other of which is separated from said substrate by means of an intermediate layer of different dopant type or an insulating layer, and wherein said shunting diode is in electrical communication with said main cell by means of an conductive path joining said shunting diode with said main cell, and said shorting or series interconnection region comprises a portion of the substrate in contact with both the top and bottom metal contacts, one of which metal contacts is also in communication with the main cell region of the next adjacent cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-04-05 | 1985-10-05 | 1986-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-04-05 | 1989-10-05 | 1990-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-04-05 | 1993-10-05 | 1994-04-06 | $7700.00 | Window Closed / Lapsed |