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US3887935A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated semiconductor arrangement including solar cell and a Schottky diode

Assignee: Telefunken Electronic GmbH
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Filing: 1973-11-02
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Granted: 1975-06-03
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Expires: 1993-11-02
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Abstract

Abstract An integrated semiconductor arrangement comprises a semiconductor body with a solar cell and a rectifying metal contact, the contact having a metal coating split up into largely separated regions which are, however, electrically connected together.

Inventors

  • 👤 Horst Fischer
  • 👤 Willi Pschunder

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 12:58
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F19/00; H10F19/70; H10F19/75; H10F19/90; H10F19/902; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 118 words
An integrated semiconductor arrangement comprising in combination: a solar cell including a semiconductor body of a first conductivity type having a region of the opposite conductivity type adjacent one major surface thereof and forming the pn-junction of the solar cell, an ohmic front side contact for said region of opposite conductivity type and an ohmic rear side contact covering substantially the entire rear surface of said semiconductor body; and a metal coating on said rear surface of said semiconductor body and forming a rectifying metal semiconductor contact with said semiconductor body, said metal coating having at least one narrow strip-shaped portion which is substantially surrounded by but separated from said ohmic rear side contact of said solar cell.
Claim 2
Dependent Claim 118 words
An integrated semiconductor arrangement comprising in combination: a solar cell including a semiconductor body of a first conductivity type having a region of the opposite conductivity type adjacent one major surface thereof and forming the pn-junction of the solar cell, an ohmic front side contact for said region of opposite conductivity type and an ohmic rear side contact covering substantially the entire rear surface of said semiconductor body; and a metal coating on said rear surface of said semiconductor body and forming a rectifying metal semiconductor contact with said semiconductor body, said metal coating having at least one narrow strip-shaped portion which is substantially surrounded by but separated from said ohmic rear side contact of said solar cell.
Claim 3
Dependent Claim 118 words
An integrated semiconductor arrangement comprising in combination: a solar cell including a semiconductor body of a first conductivity type having a region of the opposite conductivity type adjacent one major surface thereof and forming the pn-junction of the solar cell, an ohmic front side contact for said region of opposite conductivity type and an ohmic rear side contact covering substantially the entire rear surface of said semiconductor body; and a metal coating on said rear surface of said semiconductor body and forming a rectifying metal semiconductor contact with said semiconductor body, said metal coating having at least one narrow strip-shaped portion which is substantially surrounded by but separated from said ohmic rear side contact of said solar cell.
Claim 4
Dependent Claim 118 words
An integrated semiconductor arrangement comprising in combination: a solar cell including a semiconductor body of a first conductivity type having a region of the opposite conductivity type adjacent one major surface thereof and forming the pn-junction of the solar cell, an ohmic front side contact for said region of opposite conductivity type and an ohmic rear side contact covering substantially the entire rear surface of said semiconductor body; and a metal coating on said rear surface of said semiconductor body and forming a rectifying metal semiconductor contact with said semiconductor body, said metal coating having at least one narrow strip-shaped portion which is substantially surrounded by but separated from said ohmic rear side contact of said solar cell.
Claim 5
Dependent Claim 23 words
An integrated semiconductor arrangement as defined in claim 1, wherein the metal coating of the metal semiconductor contact has a comb like structure.
Claim 6
Dependent Claim 22 words
An integrated semiconductor arrangement as defined in claim 1, wherein the metal coating of the metal semiconductor contact has a ray-shaped structure.
Claim 7
Dependent Claim 22 words
An integrated semiconductor arrangement as defined in claim 1, wherein the metal coating of the metal semiconductor contact has a T-shaped structure.
Claim 8
Dependent Claim 23 words
An integrated semiconductor arragement as defined in claim 1, wherein the metal coating of the metal semiconductor contact has a widened connection surface.
Claim 9
Dependent Claim 23 words
An integrated semiconductor arrangement as defined in claim 4, wherein the transverse limb of the T-shaped metal coating serves as the connection surface.
Claim 10
Dependent Claim 66 words
A solar cell battery comprising a plurality of integrated semiconductor arrangements as defined in claim 1, and whrein the metal semiconductor contact of one integrated semiconductor arrangement is connected to the ohmic rear side contact of the subsequent integrated semiconductor arrangement and the ohmic rear side contact of one integrated semiconductor arrangement is connected to the ohmic front side contact of the subsequent integrated semiconductor arrangement.
Claim 11
Dependent Claim 60 words
A solar cell battery as defined in claim 7, wherein the ohmic front side contact of one of the two integrated semiconductor arrangements, lying on the outside, is provided as the negative pole and the ohmic rear side contact of the two integrated semiconductor arrangements, lying on the outside, is provided as the positive pole of the solar cell battery.
Claim 12
Dependent Claim 111 words
In a solar cell including a semiconductor body of a first conductivity type having a region of the opposite conductivity type adjacent one major surface thereof to form the pn-junction of the solar cell, a first ohmic contact on said one major surface for contacting said opposite conductivity type region and a second ohmic contact on substantially the entire opposite major surface of said semiconductor body for contacting said semiconductor body; the improvement comprising at least one narrow strip-shaped metal coating on said opposite major surface and forming a rectifying metal semiconductor contact with said semiconductor body, said metal coating being substantially surrounded by, but spaced from, said second ohmic contact.
Claim 13
Dependent Claim 111 words
In a solar cell including a semiconductor body of a first conductivity type having a region of the opposite conductivity type adjacent one major surface thereof to form the pn-junction of the solar cell, a first ohmic contact on said one major surface for contacting said opposite conductivity type region and a second ohmic contact on substantially the entire opposite major surface of said semiconductor body for contacting said semiconductor body; the improvement comprising at least one narrow strip-shaped metal coating on said opposite major surface and forming a rectifying metal semiconductor contact with said semiconductor body, said metal coating being substantially surrounded by, but spaced from, said second ohmic contact.

References Cited (Backward Citations)

US2981777A Cited
US3146138A Cited
US3596151A Cited
US3437818A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-06-02 1978-12-02 1979-06-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-06-02 1982-12-02 1983-06-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-06-02 1986-12-02 1987-06-03 $7700.00 Window Closed / Lapsed

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