Patent US4321104A successfully refreshed from Google Patents.
US4321104A
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Photoetching method
Assignee: Hitachi Ltd
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Filing: 1980-06-09
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Granted: 1982-03-23
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Expires: 2000-06-09
Abstract
Abstract In forming an interconnection pattern on a silicon substrate, an Al-Si alloy is used as an interconnection material, a silicon film is deposited on the Al-Si alloy film, and a photoresist layer is applied and thereafter exposed to light to provide a photoresist pattern to serve as a mask for subsequent etching of the Al-Si alloy film. Thus, the generation of standing waves due to reflection at the exposure is prevented, a microscopic interconnection pattern is precisely formed, and neither the junction-through due to a heat treatment nor a degradation in the bonding characteristics occurs.
Inventors
- 👤 Norio Hasegawa
- 👤 Naoki Yamamoto
- 👤 Hiroshi Yanazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:56
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10P76/40; H10P76/405; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/02; Y10S148/106; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
117 words
A photoetching method comprising: (a) stacking and depositing, in succession, an Al-Si alloy film having a thickness of approximately 400 nm to 1.5 μm, a silicon film having a thickness of approximately 10 to 100 nm and a photoresist film on a surface of a substrate or film on which a pattern is to be formed; (b) exposing desired parts of said photoresist film to light and thereafter developing said photoresist film to form a photoresist pattern; (c) etching and removing exposed parts of said silicon film and the underlying Al-Si alloy film by employing said photoresist pattern as a mask; and (d) removing said photoresist pattern to provide an interconnection pattern of said Al-Si alloy film.
Claim 2
Dependent Claim
117 words
A photoetching method comprising: (a) stacking and depositing, in succession, an Al-Si alloy film having a thickness of approximately 400 nm to 1.5 μm, a silicon film having a thickness of approximately 10 to 100 nm and a photoresist film on a surface of a substrate or film on which a pattern is to be formed; (b) exposing desired parts of said photoresist film to light and thereafter developing said photoresist film to form a photoresist pattern; (c) etching and removing exposed parts of said silicon film and the underlying Al-Si alloy film by employing said photoresist pattern as a mask; and (d) removing said photoresist pattern to provide an interconnection pattern of said Al-Si alloy film.
Claim 3
Dependent Claim
24 words
A photoetching method according to claim 1, wherein the content of silicon in said Al-Si alloy film is approximately 1.0 to 3.0% by weight.
Claim 4
Dependent Claim
37 words
A photoetching method according to claim 1, wherein the remaining parts of the silicon film are heated at about 350° to 500° C. for at least 10 minutes to diffuse the silicon into the Al-Si alloy film.
Claim 5
Dependent Claim
34 words
A photoetching method according to claim 1, wherein the photoresist pattern was formed to provide an interconnection pattern wherein portions of the Al-Si film have widths of 1 μm and intervals of 1 μm.
Claim 6
Dependent Claim
20 words
A photoetching method according to claim 1, wherein the remaining parts of the silicon film are removed by plasma etching.
Claim 7
Dependent Claim
30 words
A photoetching method according to claim 1, wherein the remaining parts of the silicon film are heated to an elevated temperature to diffuse the silicon onto the Al-Si alloy film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-22 | 1985-09-21 | 1986-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-22 | 1989-09-21 | 1990-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-22 | 1993-09-21 | 1994-03-23 | $7700.00 | Window Closed / Lapsed |