Thermal coupler for amplifier temperature compensation

Claim 2

In a semiconductor circuit on a conductor board including a first semiconductor output device and second semiconductor control device for regulating the operation of said first semiconductor device, said first and second semiconductor devices having conductivity characteristics which vary in substantially the same manner with temperature variations, a thermal transfer system for stabilizing the operation of said first semiconductor device comprising: a heat sink positioned on said conductor board, said heat sink being in thermal contact with said first semiconductor output device; and a thermal coupler including: a first base member having connecting means located on a lower surface of said base member for mounting said thermal coupler on said conductor board, said second semiconductor control device being in thermal contact with an upper surface of said base member; and a second member integrally connected to said base member and in thermal contact with said heat sink such that said first and second semiconductor devices operate at an approximately constant temperature differential.

Claim 3

A thermal transfer system according to claim 1 wherein the second member of said thermal coupler is connected to one end of the first base member of said thermal coupler with the angle between said first base member and said second member being approximately 90°.

Claim 4

A thermal transfer system according to claim 1 wherein the first semiconductor output device is a multi-stage transistor amplifier with each transistor stage mounted on said heat sink and said thermal coupler is in thermal contact with said heat sink such that the temperature of said thermal coupler closely approaches the average operating temperature of all transistors mounted on said heat sink.

Claim 5

A thermal transfer system according to claim 3 wherein the output transistor of the multi-stage transistor amplifier is an NPN-type transistor and the second semiconductor control device is a current-carrying diode connected to the emitter of said output transistor for proper biasing of said transistor amplifier.

Claim 6

A thermal transfer system according to claim 4 wherein said second semiconductor device is a thermistor.

Claim 7

A thermal transfer system according to claim 1, wherein said thermal coupler is formed of a metal possessing high thermal conductivity.

Claim 8

A thermal transfer system according to claim 1 wherein the first semiconductor output device is an integrated circuit.

Claim 9

A thermal transfer system according to claim 1 wherein said heat sink includes an extruded portion with said second member of said thermal coupler inserted in said extruded portion and held in position thereby.

Claim 10

In a semiconductor circuit on a conductor board including a multi-stage transistor amplifier in which the output transistor is an NPN-type transistor and a DC current-carrying diode connected to the emitter of said output transistor for proper biasing of said transistor amplifier, said transistor amplifier and biasing diode having conductivity characteristics which vary in substantially the same manner with temperature variation, a thermal transfer system for stabilizing the operation of said transistor amplifier comprising: a heat sink positioned on said conductor board, said heat sink being in thermal contact with said multi-stage transistor amplifier and including an extruded portion; and a thermal coupler formed of a metal possessing high thermal conductivity, said thermal coupler including: a base member having connecting means located on a lower surface of said base member for mounting said thermal coupler on said conductor board, said current-carrying diode being in thermal contact with an upper surface of said base member; and an upright member integrally connected to one end of said base member with the angle between said base member and said upright member being approximately 90° such that said upright member projects up from the surface of said conductor board when said base member is mounted on said conductor board, said upright member being in thermal contact with said heat sink and held in position by means of said extruded portion of said heat sink so that the temperature of said thermal coupler closely approaches the average operating temperature of all transistors mounted on said heat sink such that said transistor amplifier and said current-carrying diode operate at an approximately constant temperature differential.

Claim 11

In a semiconductor circuit on a conductor board including a multi-stage transistor amplifier in which the output transistor is an NPN-type transistor and a DC current-carrying diode connected to the emitter of said output transistor for proper biasing of said transistor amplifier, said transistor amplifier and biasing diode having conductivity characteristics which vary in substantially the same manner with temperature variation, a thermal transfer system for stabilizing the operation of said transistor amplifier comprising: a heat sink positioned on said conductor board, said heat sink being in thermal contact with said multi-stage transistor amplifier and including an extruded portion; and a thermal coupler formed of a metal possessing high thermal conductivity, said thermal coupler including: a base member having connecting means located on a lower surface of said base member for mounting said thermal coupler on said conductor board, said current-carrying diode being in thermal contact with an upper surface of said base member; and an upright member integrally connected to one end of said base member with the angle between said base member and said upright member being approximately 90° such that said upright member projects up from the surface of said conductor board when said base member is mounted on said conductor board, said upright member being in thermal contact with said heat sink and held in position by means of said extruded portion of said heat sink so that the temperature of said thermal coupler closely approaches the average operating temperature of all transistors mounted on said heat sink such that said transistor amplifier and said current-carrying diode operate at an approximately constant temperature differential.

Claim 12

A heat transfer device for stabilizing the operation of a first semiconductor device controlled by a direct-current carrying second semiconductor biasing device in a negative feedback current control loop wherein said first semiconductor device and second semiconductor device possess substantially the same temperature-dependent conductance characteristics with said second semiconductor device electrically coupled to said first semiconductor device to provide a direct-current to said first semiconductor device for biasing said first semiconductor device, said heat transfer device comprising: a first metal base plate of high thermal conductivity having a bottom and top surface, one end of said bottom surface including a mounting stud for fixedly positioning said heat transfer device on a circuit board with said second semiconductor device thermally coupled to the top surface of said metal base plate; and a second metal plate of high thermal conductivity integrally connected at one end to said base plate, the end of said second plate adjacent to said first base plate including a plurality of mounting studs extending downwardly beyond said base plate for fixedly positioning said heat transfer device on said circuit board, with said first semiconductor device or integrated circuit thermally coupled to a surface of said second metal plate and, in turn, thermally coupled to said second semiconductor biasing device.

Claim 13

A heat transfer device for stabilizing the operation of a first semiconductor device controlled by a direct-current carrying second semiconductor biasing device in a negative feedback current control loop wherein said first semiconductor device and second semiconductor device possess substantially the same temperature-dependent conductance characteristics with said second semiconductor device electrically coupled to said first semiconductor device to provide a direct-current to said first semiconductor device for biasing said first semiconductor device, said heat transfer device comprising: a first metal base plate of high thermal conductivity having a bottom and top surface, one end of said bottom surface including a mounting stud for fixedly positioning said heat transfer device on a circuit board with said second semiconductor device thermally coupled to the top surface of said metal base plate; and a second metal plate of high thermal conductivity integrally connected at one end to said base plate, the end of said second plate adjacent to said first base plate including a plurality of mounting studs extending downwardly beyond said base plate for fixedly positioning said heat transfer device on said circuit board, with said first semiconductor device or integrated circuit thermally coupled to a surface of said second metal plate and, in turn, thermally coupled to said second semiconductor biasing device.

Claim 14

A heat transfer device according to claim 10 wherein said second metal plate includes a mounting aperture for positioning said first semiconductor device on said second metal plate by means of a mounting screw.

Claim 15

A heat transfer device according to claim 10 wherein said second metal plate forms an angle of approximately 90° with said first metal base plate.

Claim 16

A heat transfer device according to claim 12 wherein said first and second metal plates are comprised of a metal possessing high thermal conductivity.

Claim 17

A heat transfer device according to claim 10 wherein said first semiconductor device is a multi-stage transistorized power amplifier with all of said transistors mounted on said second metal plate and said second semiconductor device is a diode conducting means.

Claim 18

A heat transfer device according to claim 14 wherein said second semiconductor device is a thermistor.

Claim 19

A heat transfer device for stabilizing the operation of a multi-stage transitorized power amplifier controlled by a direct-current carrying diode conducting means in a negative feedback current control loop wherein said power amplifier transistors and diode conducting means possess substantially the same temperature-dependent conductance characteristics with said diode conducting means electrically coupled to the output transistor of said multi-stage transistorized power amplifier to provide a direct-current for biasing the collector and base electrodes of said output transistor in a reverse direction and for biasing the base and emitter electrodes of said output transistor in a forward direction, said heat transfer device comprising: a metal base plate of high thermal conductivity having a bottom and top surface, one end of said bottom surface including a mounting stud for fixedly positioning said heat transfer device on a circuit board with said diode conducting means thermally coupled to the top surface of said metal base plate; and an upright metal plate of high thermal conductivity formed by bending a single metal member at an angle of approximately 90° thus forming said metal base plate and said upright metal plate, said upright metal plate including a mounting aperture for positioning said transistors of said multi-stage transistorized power amplifier on said upright metal plate by means of mounting screws and including a plurality of mounting studs positioned on the end of said upright metal plate adjacent to said base plate and extending downwardly beyond said base plate for fixedly positioning said heat transfer device on said circuit board with said multi-stage transistorized power amplifier thermally coupled to a surface of said upright metal plate and, in turn, thermally coupled to said diode conducting means.

Claim 20

A heat transfer device for stabilizing the operation of a multi-stage transitorized power amplifier controlled by a direct-current carrying diode conducting means in a negative feedback current control loop wherein said power amplifier transistors and diode conducting means possess substantially the same temperature-dependent conductance characteristics with said diode conducting means electrically coupled to the output transistor of said multi-stage transistorized power amplifier to provide a direct-current for biasing the collector and base electrodes of said output transistor in a reverse direction and for biasing the base and emitter electrodes of said output transistor in a forward direction, said heat transfer device comprising: a metal base plate of high thermal conductivity having a bottom and top surface, one end of said bottom surface including a mounting stud for fixedly positioning said heat transfer device on a circuit board with said diode conducting means thermally coupled to the top surface of said metal base plate; and an upright metal plate of high thermal conductivity formed by bending a single metal member at an angle of approximately 90° thus forming said metal base plate and said upright metal plate, said upright metal plate including a mounting aperture for positioning said transistors of said multi-stage transistorized power amplifier on said upright metal plate by means of mounting screws and including a plurality of mounting studs positioned on the end of said upright metal plate adjacent to said base plate and extending downwardly beyond said base plate for fixedly positioning said heat transfer device on said circuit board with said multi-stage transistorized power amplifier thermally coupled to a surface of said upright metal plate and, in turn, thermally coupled to said diode conducting means.