Semiconductor photoelectric conversion device
Abstract
Abstract An MIS type semiconductor photoelectric conversion device which comprises a semiconductor layer, a light-transparent, current-permeable, insulating or semi-insulating layer disposed on the semiconductor layer, a first conductive layer disposed on the light-transparent, current-permeable, insulating or semi-insulating layer, and a second conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, current-permeable, insulating or semi-insulating layer, and in which when light is incident to the semiconductor layer from the outside of the first conductive layer, a photoelectric conversion function is obtained by the presence of a barrier set up by the light-transparent, current-permeable, insulating or semi-insulating layer. In such an MIS type semiconductor photoelectric conversion device, the light-transparent, current-permeable, insulating or semi-insulating layer is formed of a nitride. The nitride layer is formed of silicon nitride or silicon nitride and a conductive metal nitride. In the MIS type semiconductor photoelectric conversion device, the first conductive layer has a comb- or grid-like pattern and an anti-reflection layer is formed to cover the first conductive layer. The light-transparent, current-permeable, insulating or semi-insulating layer and the anti-reflecting layer are both formed of a nitride.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Claims Analysis
Total Claims: 4References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-15 | 1985-09-14 | 1986-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-15 | 1989-09-14 | 1990-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-15 | 1993-09-14 | 1994-03-16 | $7700.00 | Window Closed / Lapsed |