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US4316385A Expired / Lapsed US ⏱️ 0.0 years remaining

Fingerprinting crystals

Assignee: General Electric Co
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Filing: 1980-06-18
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Granted: 1982-02-23
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Expires: 2000-06-18
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Abstract

Abstract A smooth surface of a diamond or cubic boron nitride crystal is bombarded with ions sufficiently to penetrate the surface and impart an ion implanted region in the crystal in a predetermined pattern, the resulting crystal is charged electrostatically, and a powder is applied to the charged smooth surface producing a pattern thereon which is a delineation of the implanted region and can be used to identify or fingerprint the crystal.

Inventors

  • 👤 Robert C. DeVries
  • 👤 Roy E. Tuft

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 20:47
CPC Classifications
G; G01; G01N; G01N33/00; G01N33/389; G01N27/00; G01N27/60

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 228 words
A process for fingerprinting a crystal selected from the group consisting of natural diamond, synthetic diamond and cubic boron nitride by implanting ions therein which impart to said crystal a predetermined structure which comprises providing said crystal with at least one external surface having a surface area of at least 0.1 square millimeter which is at least substantially smooth and without significant elevational differences, positioning said crystal in a chamber for ion-bombardment of at least said smooth surface thereof, providing said chamber with ionizing means for producing ions in beam form and means for accelerating the resulting implanting ions, evacuating said chamber, providing said chamber with a material to be ionized to produce implanting ions, sufficiently ionizing said material forming and accelerating a beam of the resulting implanting ions to selectively penetrate at least said smooth surface of said crystal to impart a predetermined structure thereto without significant deleterious damage to the appearance of said crystal, said chamber having been evacuated sufficiently to be free of at least significant contaminants, electrostatically charging the resulting characterized crystal so that at least said smooth surface of said crystal is electrostatically charged, applying a powder to said charged surface forming a powder pattern on said charged surface, said powder ranging in particle size from submicron to about 45 microns, said pattern being a delineation of the ion-implanted structure in said crystal.
Claim 2
Dependent Claim 228 words
A process for fingerprinting a crystal selected from the group consisting of natural diamond, synthetic diamond and cubic boron nitride by implanting ions therein which impart to said crystal a predetermined structure which comprises providing said crystal with at least one external surface having a surface area of at least 0.1 square millimeter which is at least substantially smooth and without significant elevational differences, positioning said crystal in a chamber for ion-bombardment of at least said smooth surface thereof, providing said chamber with ionizing means for producing ions in beam form and means for accelerating the resulting implanting ions, evacuating said chamber, providing said chamber with a material to be ionized to produce implanting ions, sufficiently ionizing said material forming and accelerating a beam of the resulting implanting ions to selectively penetrate at least said smooth surface of said crystal to impart a predetermined structure thereto without significant deleterious damage to the appearance of said crystal, said chamber having been evacuated sufficiently to be free of at least significant contaminants, electrostatically charging the resulting characterized crystal so that at least said smooth surface of said crystal is electrostatically charged, applying a powder to said charged surface forming a powder pattern on said charged surface, said powder ranging in particle size from submicron to about 45 microns, said pattern being a delineation of the ion-implanted structure in said crystal.
Claim 3
Dependent Claim 22 words
The process according to claim 1 wherein said material to be ionized is carbon and said implanting ions are ions of carbon.
Claim 4
Dependent Claim 22 words
The process according to claim 1 wherein said material to be ionized is boron and said implanting ions are ions of boron.
Claim 5
Dependent Claim 22 words
The process according to claim 1 wherein said material to be ionized is phosphorus and said implanting ions are ions of phosphorus.
Claim 6
Dependent Claim 18 words
The process according to claim 1 wherein said crystal is electrostatically charged and said powder is applied simultaneously.
Claim 7
Dependent Claim 19 words
The process according to claim 1 wherein said external surface is mechanically polished before said crystal is electrostatically charged.
Claim 8
Dependent Claim 20 words
The process according to claim 1 wherein said powder has a particle size ranging from submicron to about 5 microns.
Claim 9
Dependent Claim 26 words
The process according to claim 1 wherein said powder is selected from the group consisting of an insulating powder, a semiconducting powder and a metallic powder.
Claim 10
Dependent Claim 74 words
A fingerprint of a crystal selected from the group consisting of natural diamond, synthetic diamond and cubic boron nitride, said crystal having at least one external pattern producing surface with a surface area of at least 0.1 square millimeter which is at least substantially smooth said pattern producing surface being associated with a fingerprinting structure comprised of implanted ions, said fingerprint being composed of a powder pattern produced by the process of claim 1.
Claim 11
Dependent Claim 11 words
A photograph of the fingerprint of said crystal of claim 9.
Claim 12
Dependent Claim 22 words
The fingerprint of said crystal of claim 9 wherein said powder pattern is adhered to the adhesive surface of a transparent tape.
Claim 13
Dependent Claim 20 words
The fingerprint of said crystal of claim 9 wherein said powder ranges in particle size from submicron to 5 microns.

References Cited (Backward Citations)

US4143544A Cited
US4200506A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-02-22 1985-08-24 1986-02-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-02-22 1989-08-24 1990-02-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-02-22 1993-08-24 1994-02-23 $7700.00 Window Closed / Lapsed

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