Patent US4315097A successfully refreshed from Google Patents.
US4315097A
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Back contacted MIS photovoltaic cell
Assignee: McDonnell Douglas Corp
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Filing: 1980-10-27
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Granted: 1982-02-09
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Expires: 2000-10-27
Abstract
Abstract This photovoltaic cell in a principal embodiment comprises a P-type substrate having an unshadowed first surface adapted to receiving incident radiation and a second surface which contains at least one ohmic contact and at least one metal-insulator-semiconductor contact, this structure thereby forming a back contacted minority carrier MIS cell.
Inventors
- 👤 Allen L. Solomon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:58
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; H10F10/00; H10F10/10; H10F10/12; H10F77/20; H10F77/206; H10F77/211; H10F77/219; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
48 words
A photovoltaic cell comprising a semiconductor substrate having substantially parallel opposite surfaces, a first surface thereof being substantially free of any shadowing effects and adapted to receive incident radiation, and a second opposite surface thereof having at least one ohmic contact and at least one metal-insulator-semiconductor (MIS) contact.
Claim 2
Dependent Claim
48 words
A photovoltaic cell comprising a semiconductor substrate having substantially parallel opposite surfaces, a first surface thereof being substantially free of any shadowing effects and adapted to receive incident radiation, and a second opposite surface thereof having at least one ohmic contact and at least one metal-insulator-semiconductor (MIS) contact.
Claim 3
Dependent Claim
11 words
The cell of claim 1 wherein the semiconductor substrate comprises silicon.
Claim 4
Dependent Claim
22 words
The cell of claim 2 wherein the silicon is selected from the group consisting of monocrystalline silicon, polycrystalline silicon, and amorphous silicon.
Claim 5
Dependent Claim
38 words
The cell of claim 1 wherein the semiconductor substrate is selected from the group consisting of IV A elements other than silicon, VI A elements, III A-V A compounds, II B-VI A compounds, and I B-VI A compounds.
Claim 6
Dependent Claim
21 words
The cell of claim 1 further comprising a light transmitting anti-reflection coating layer substantially covering the first surface of the cell.
Claim 7
Dependent Claim
24 words
The cell of claim 1 wherein the insulator layer of the MIS contact comprises a layer of uniform thickness less than approximately 50 angstroms.
Claim 8
Dependent Claim
16 words
The cell of claim 1 wherein the insulator layer of the MIS contact comprises silicon dioxide.
Claim 9
Dependent Claim
18 words
The cell of claim 1 wherein the second surface is substantially covered by a protective insulator coating layer.
Claim 10
Dependent Claim
11 words
The cell of claim 1 wherein the first surface is textured.
Claim 11
Dependent Claim
54 words
A photovoltaic cell comprising a semiconductor substrate of a P conductivity type having substantially parallel opposite surfaces, a first surface thereof being substantially free of any shadowing effects and adapted to receive incident radiation, and a second opposite surface thereof having at least one ohmic contact and at least one minority carrier metal-insulator-semiconductor contact.
Claim 12
Dependent Claim
54 words
A photovoltaic cell comprising a semiconductor substrate of a P conductivity type having substantially parallel opposite surfaces, a first surface thereof being substantially free of any shadowing effects and adapted to receive incident radiation, and a second opposite surface thereof having at least one ohmic contact and at least one minority carrier metal-insulator-semiconductor contact.
Claim 13
Dependent Claim
21 words
The cell of claim 10 wherein the metal-insulator-semiconductor contact comprises a thin insulator layer overlaid with a low work function metal.
Claim 14
Dependent Claim
34 words
The cell of claim 11 wherein the insulator layer is selected from the group consisting of silicon dioxide and native oxide, SiO x , and has a thickness of less than approximately 50 angstroms.
Claim 15
Dependent Claim
14 words
The cell of claim 11 wherein the metal in the MIS contact comprises aluminum.
Claim 16
Dependent Claim
11 words
The cell of claim 10 wherein the semiconductor substrate comprises silicon.
Claim 17
Dependent Claim
22 words
The cell of claim 14 wherein the silicon is selected from the group consisting of monocrystalline silicon, polycrystalline silicon, and amorphous silicon.
Claim 18
Dependent Claim
38 words
The cell of claim 10 wherein the semiconductor substrate is selected from the group consisting of IV A elements other than silicon, VI A elements, III A-V A compounds, II B-VI A compounds, and I B-VI A compounds.
Claim 19
Dependent Claim
20 words
The cell claim 10 further comprising a light transmitting anti-reflection coating layer substantially covering the first surface of the cell.
Claim 20
Dependent Claim
21 words
The cell of claim 17 wherein the coating layer is selected from the group consisting of silicon nitride and silicon monoxide.
Claim 21
Dependent Claim
11 words
The cell of claim 10 wherein the first surface is textured.
Claim 22
Dependent Claim
15 words
The cell of claim 10 wherein the metal layer of the ohmic contact comprises aluminum.
Claim 23
Dependent Claim
31 words
The cell of claim 10 wherein the metal layer of the ohmic contact is selected from the group consisting of silver, and nickel overcoated with copper, and an aluminum rich alloy.
Claim 24
Dependent Claim
18 words
The cell of claim 10 wherein the second surface is substantially covered with a protective insulator coating layer.
Claim 25
Dependent Claim
23 words
The cell of claim 22 wherein the protective insulator coating layer is selected from the group consisting of silicon nitride and silicon monoxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-02-08 | 1985-08-10 | 1986-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-02-08 | 1989-08-10 | 1990-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-02-08 | 1993-08-10 | 1994-02-09 | $7700.00 | Window Closed / Lapsed |