Abstract An electron multiplier device formed of the combination of a support made of high temperature-resisting electrically-insulating ceramic material and of a layer of secondary electron emitting semi-conducting glass material fused to the inner wall of the ceramic material and method of making; the multiplier device is further characterized in that the ceramic material and the glass material have substantially the same coefficient of expansion. The device is made by pouring molten semi-conducting glass into at least one channel in a ceramic support having a higher fusion point than that of the glass and the same coefficient of expansion, flowing the glass under pressure through the channel and cooling to leave a semi-conductor wall to the channel.
A method of making an electron multiplier device, comprising the steps of: pouring molten semi-conducting glass into at least one channel in a ceramic support having a higher fusion point than that of said glass and having the same coefficient of expansion; flowing the glass under gas pressure through said channel; and cooling said support and channel before removing the gas pressure to leave a semi-conducting wall to said channel.
Claim 2
Independent Claim
70 words
A method of making an electron multiplier device, comprising the steps of: pouring molten semi-conducting glass into at least one channel in a ceramic support having a higher fusion point than that of said glass and having the same coefficient of expansion; flowing the glass under gas pressure through said channel; and cooling said support and channel before removing the gas pressure to leave a semi-conducting wall to said channel.
Claim 3
Dependent Claim
30 words
A method as in claim 1, including the further step of flowing a reducing gas through said channel after cooling to produce a semi-conductive and emissive film on the glass.
Claim 4
Dependent Claim
22 words
A method as in claim 1, wherein said step of pouring includes pouring a molten glass formed from a mixture of oxides.