Abstract A semiconductor component including at least one planar PN junction formed between a first semiconductor region and a second semiconductor region, zone guard rings surrounding the first region and surrounded by the second region in order to improve the reverse-current behavior of the PN junction, and a third semiconductor region having the same conductivity type as the second region, but having a higher doping concentration than the latter provided in the second region preceding the respective edges of the guard rings on the side of the PN junction. Typically the third region is doped such that with the PN junction polarized in the blocking direction, at least one point in the third region remains at zero field strength. Additionally provided is a fourth semiconductor region between the guard rings and between the guard ring closest the PN junction and the PN junction, which has the same conductivity type as the second region, but a lesser doping concentration.
In a semiconductor component provided with a planar blocking PN junction suited to block reverse voltages greater or equal to 2 kV formed between a first semiconductor region and a second semiconductor region, said two regions forming a common main surface of said component such that said first region is surrounded by said second region and said PN junction emerges on said surface between said two regions, and with at least one ring zone at said surface in said second region of the same conductivity as said first region, said ring zone surrounding said PN junction but being separated from the latter by a ring-like part of said second region the improvement comprising: at least one third semiconductor region having the same conductivity type as the second region, but having a higher doping concentration than the latter provided at said surface in said ring-like part of said second region between said PN junction and said ring zone.
Claim 2
Dependent Claim
157 words
In a semiconductor component provided with a planar blocking PN junction suited to block reverse voltages greater or equal to 2 kV formed between a first semiconductor region and a second semiconductor region, said two regions forming a common main surface of said component such that said first region is surrounded by said second region and said PN junction emerges on said surface between said two regions, and with at least one ring zone at said surface in said second region of the same conductivity as said first region, said ring zone surrounding said PN junction but being separated from the latter by a ring-like part of said second region the improvement comprising: at least one third semiconductor region having the same conductivity type as the second region, but having a higher doping concentration than the latter provided at said surface in said ring-like part of said second region between said PN junction and said ring zone.
Claim 3
Dependent Claim
58 words
A semiconductor component according to claim 1, further comprising: said third semiconductor region having a doping concentration and width, selected such that with said PN junction polarized in the blocking direction at least one point of said third region remains at zero field strength, and the width of said third region being between 10 μm and 200 μm.
Claim 4
Dependent Claim
29 words
A semiconductor component according to claim 1, or 2, further comprising: the distance of said third semiconductor region from the respective ring zone being between 0 and 50 μm.
Claim 5
Dependent Claim
49 words
A semiconductor component according to claim 1, further comprising: a fourth semiconductor region which has the same type of conductivity but a lesser doping concentration than the second semiconductor region, said fourth region being provided between said PN junction and the first ring zone closest to said first region.