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US4303992A
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Serial parallel charge coupled device employing a gate splitting device
Assignee: International Business Machines Corp
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Filing: 1980-05-13
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Granted: 1981-12-01
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Expires: 2000-05-13
Abstract
Abstract This serial to parallel to serial (SPS) charge coupled device (CCD) shift register memory has a serial output shift register with gate electrode structures that are interdigitated with the gate electrode structures of each last stage of a plurality of parallel shift registers to transfer interlaced data bits from the parallel shift registers to the serial output register in a sequential order.
Inventors
- 👤 Keith G. Barkley
- 👤 Majid Ghafghaichi
- 👤 Yelandur R. Gopalakrishna
- 👤 Albert J. Tzou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:31
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/891; G; G11; G11C; G11C19/00; G11C19/28; G11C19/287
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
162 words
In a serial to parallel to serial charge coupled device shift register memory of the type having channels for a plurality of parallel shift registers all terminating in a channel for a single serial shift register, the improvement comprising, a plurality of gate electrodes means of two different lengths overlying the channel of said serial register with the longer electrodes also overlying the ends every other of the channels for said parallel shift registers and the shorter gate electrodes positioned between each two longer electrodes at the end of the intervening channels for a parallel registers, a single gate electrode means overlying all of the channels of said parallel shift adjacent to said plurality of said gate electrodes and having extensions juxtaposed between said longer electrodes and facing said shorter electrodes, and transfer electrode means overlying said longer of the plurality of gate electrodes and said extensions for transfer of data from said parallel registers to said serial registers in two groups.
Claim 2
Dependent Claim
162 words
In a serial to parallel to serial charge coupled device shift register memory of the type having channels for a plurality of parallel shift registers all terminating in a channel for a single serial shift register, the improvement comprising, a plurality of gate electrodes means of two different lengths overlying the channel of said serial register with the longer electrodes also overlying the ends every other of the channels for said parallel shift registers and the shorter gate electrodes positioned between each two longer electrodes at the end of the intervening channels for a parallel registers, a single gate electrode means overlying all of the channels of said parallel shift adjacent to said plurality of said gate electrodes and having extensions juxtaposed between said longer electrodes and facing said shorter electrodes, and transfer electrode means overlying said longer of the plurality of gate electrodes and said extensions for transfer of data from said parallel registers to said serial registers in two groups.
Claim 3
Dependent Claim
40 words
The shift register memory of claim 1 including electric pulse means coupled to said plurality of gate electrodes and said for supplying sequences of pulses to transfer data from said parallel registers to said serial output register in sequential order.
Claim 4
Dependent Claim
26 words
The shift register memory of claim 2 wherein said transfer electrode means includes two electrodes which are always activated for transfer of data at different times.
Claim 5
Dependent Claim
118 words
In a serial to parallel to serial charge coupled device shift register memory of the type having the channels for a plurality of parallel shift registers all terminating in a channel for a single serial shift register and also having a set of shielding electrodes with interdigitated elements lying under two transfer electrodes to shield a different half of said plurality of parallel shift registers with each half of the set of shielding electrodes, the improvement comprising one of the halves of the set of shielding electrodes is formed of interlaced short and long electrodes that are positioned over the channel of the single serial shift register and functions as shifting electrodes for the single serial shift register.
Claim 6
Dependent Claim
118 words
In a serial to parallel to serial charge coupled device shift register memory of the type having the channels for a plurality of parallel shift registers all terminating in a channel for a single serial shift register and also having a set of shielding electrodes with interdigitated elements lying under two transfer electrodes to shield a different half of said plurality of parallel shift registers with each half of the set of shielding electrodes, the improvement comprising one of the halves of the set of shielding electrodes is formed of interlaced short and long electrodes that are positioned over the channel of the single serial shift register and functions as shifting electrodes for the single serial shift register.
Claim 7
Dependent Claim
40 words
The shift register memory of claim 4 including electric pulse means coupled to said plurality of gate electrodes and said for supplying sequences of pulses to transfer data from said parallel registers to said serial output register in sequential order.
Claim 8
Dependent Claim
26 words
The shift register memory of claim 5 wherein said transfer electrode means includes two electrodes which are always activated for transfer of data at different times.
References Cited (Backward Citations)
US4092734A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-30 | 1985-06-01 | 1985-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-30 | 1989-06-01 | 1989-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-30 | 1993-06-01 | 1993-12-01 | $7700.00 | Window Closed / Lapsed |