US4302529A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for developing a positive electron resist
Assignee: Honeywell Inc
•
Filing: 1980-01-08
•
Granted: 1981-11-24
•
Expires: 2000-01-08
Abstract
Abstract A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate is disclosed for a positive resist consisting of a copolymer film of poly (methyl alpha-chloroacrylate-co-methacrylonitrile) utilizing a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone.
Inventors
- 👤 Juey H. Lai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:57
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/30; G03F7/32; G03F7/325
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
92 words
A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate wherein said positive resist is a copolymer film of poly (methyl alpha-chloroacrylate-comethacrylonitrile) having a thickness of about 0.3 to 1.0 microns and which has been exposed to sufficient ionizing radiation comprising the step of developing the exposed regions of the resist film to the substrate by means of a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone.
Claim 2
Independent Claim
92 words
A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate wherein said positive resist is a copolymer film of poly (methyl alpha-chloroacrylate-comethacrylonitrile) having a thickness of about 0.3 to 1.0 microns and which has been exposed to sufficient ionizing radiation comprising the step of developing the exposed regions of the resist film to the substrate by means of a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone.
Claim 3
Dependent Claim
29 words
The method according to claim 1 wherein the exposed regions of the resist are developed to the substrate in a 1 to 1 mixture of benzonitrile and methyl cellosolve.
Claim 4
Dependent Claim
29 words
The method according to claim 1 wherein the exposed regions of the resist are developed to the substrate in a 3 to 1 mixture of benzonitrile and methyl cellosolve.
Claim 5
Dependent Claim
30 words
The method according to claim 1 wherein the exposed regions of the resist are developed to the substrate in a 1 to 9 mixture of benzonitrile and methyl ethyl ketone.
Claim 6
Dependent Claim
20 words
The method according to claim 1 wherein the exposed regions of the resist are developed to the substrate in benzonitrile.
Claim 7
Dependent Claim
32 words
The method of claim 1 further comprising the step of purging the atmosphere environment of said resist with a gas inert to said resist and said developer prior to applying said developer.
Claim 8
Dependent Claim
11 words
The method of claim 3 wherein said inert gas is Nitrogen.
Claim 9
Dependent Claim
13 words
The method of claim 1 wherein said developer is applied as a spray.
Claim 10
Dependent Claim
16 words
The method of claim 1 further comprising the step of rinsing said developer from said resist.
Claim 11
Dependent Claim
10 words
The method of claim 9 wherein said solvent is 2-propanol.
Claim 12
Dependent Claim
21 words
The method of claim 9, further comprising the step of drying the rinsed film with a gas inert to said resist.
Claim 13
Dependent Claim
10 words
The method of claim 11 wherein said gas is nitrogen.
Claim 14
Independent Claim
122 words
A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate wherein said positive resist is a copolymer film of poly (methyl alpha-chloroacrylate-comethacrylonitrile) having a thickness of about 0.3 to 1.0 microns and which has been exposed to sufficient ionizing radiation comprising the steps of: purging the atmosphere of said resist with a gas inert to said resist and the developer; applying a developing spray to said resist, said spray containing a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone; rinsing said developer from said resist; and drying said resist film with a gas inert to said film.
Claim 15
Independent Claim
122 words
A method of developing a positive electron resist for delineating a desired integrated circuit pattern upon a circuit substrate wherein said positive resist is a copolymer film of poly (methyl alpha-chloroacrylate-comethacrylonitrile) having a thickness of about 0.3 to 1.0 microns and which has been exposed to sufficient ionizing radiation comprising the steps of: purging the atmosphere of said resist with a gas inert to said resist and the developer; applying a developing spray to said resist, said spray containing a developer selected from the group consisting of benzonitrile, a mixture of benzonitrile and methyl cellosolve, and a mixture of benzonitrile and methyl ethyl ketone; rinsing said developer from said resist; and drying said resist film with a gas inert to said film.
Claim 16
Dependent Claim
26 words
The method of claim 13 wherein said developer is a 1:1 mixture of benzonitrile and methyl cellosolve and said spray is applied for about 80 seconds.
Claim 17
Dependent Claim
28 words
The method of claim 13 wherein said developer is a 1:9 mixture of benzonitrile and methyl ethyl ketone and wherein said spray is applied for about 4 minutes.
Claim 18
Dependent Claim
27 words
The method of claim 13 wherein said developer is a 3:1 mixture of benzonitrile and methyl cellosolve and wherein said spray is applied for about 2 minutes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-23 | 1985-05-25 | 1985-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-23 | 1989-05-25 | 1989-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-23 | 1993-05-25 | 1993-11-24 | $7700.00 | Window Closed / Lapsed |