US4301592A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating semiconductor junction device employing separate metallization
Assignee: Individual
•
Filing: 1980-01-21
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Granted: 1981-11-24
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Expires: 2000-01-21
Abstract
Abstract A method of fabricating a p-n junction device such as solar cells using metal contacts for p regions and n region heat-treated at two different temperatures. A metal with low work functions is heated first to a high temeperature for making ohmic contact to a p-type semiconductor substrate, and then at low temperature for contacting the n-type region. A metal with high work function is heated first to a high temperature for contacting an n-type semiconductor substrate and then at low temperature for contacting the p-type region.
Inventors
- 👤 Hung Chang Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:01
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/62; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/02
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
125 words
A method of contacting a semiconductor junction device comprising the steps of forming a pn or an np junction on a doped semiconductor substrate of one conductivity type by creating a thin layer of opposite conductivity type on said substrate, depositing a layer of a metal on said substrate, heating said substrate and said metal at first temperature to form an ohmic contact, depositing a layer of the same metal on said thin layer of opposite conductivity type, heating said substrate and said metal to a second temperature which is lower than said first temperature, said second temperature being sufficient to form an ohmic contact between said metal and said thin layer but insufficient to form an ohmic contact between said metal and said substrate.
Claim 2
Independent Claim
125 words
A method of contacting a semiconductor junction device comprising the steps of forming a pn or an np junction on a doped semiconductor substrate of one conductivity type by creating a thin layer of opposite conductivity type on said substrate, depositing a layer of a metal on said substrate, heating said substrate and said metal at first temperature to form an ohmic contact, depositing a layer of the same metal on said thin layer of opposite conductivity type, heating said substrate and said metal to a second temperature which is lower than said first temperature, said second temperature being sufficient to form an ohmic contact between said metal and said thin layer but insufficient to form an ohmic contact between said metal and said substrate.
Claim 3
Dependent Claim
29 words
A method of contacting a semiconductor junction device as defined in claim 1, wherein said substrate is n-type and said metal is of higher work function than said substrate.
Claim 4
Dependent Claim
18 words
A method of contacting a semiconductor junction device as defined in claim 2, wherein said metal is aluminum.
Claim 5
Dependent Claim
33 words
A method of contacting a semiconductor junction device as defined in claim 3, wherein said first temperature is higher than 400 degrees centigrade and said second temperature is less than 400 degrees centigrade.
Claim 6
Dependent Claim
29 words
A method of contacting a semiconductor junction device as defined in claim 1, wherein said substrate is p-type and said metal is of lower work function than said substrate.
References Cited (Backward Citations)
US3434885A
Cited
US3736180A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-23 | 1985-05-25 | 1985-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-23 | 1989-05-25 | 1989-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-23 | 1993-05-25 | 1993-11-24 | $7700.00 | Window Closed / Lapsed |