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Patent US4301477A successfully refreshed from Google Patents.
US4301477A
Expired / Lapsed
US
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Solid-state imaging device
Assignee: Hitachi Ltd
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Filing: 1980-02-11
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Granted: 1981-11-17
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Expires: 2000-02-11
Abstract
Abstract In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.
Inventors
- 👤 Iwao Takemoto
- 👤 Masaharu Kubo
- 👤 Shinya Ohba
- 👤 Shuhei Tanaka
- 👤 Masakazu Aoki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 01:17
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H04; H04N; H04N25/00; H04N25/60; H04N25/67; H04N25/671; H04N25/677; H04N25/70; H04N25/76
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
73 words
A solid-state imaging device comprising a two-dimensional array of photo-electric conversion elements, vertical and horizontal switching MOS transistors for transferring, to a signal output terminal, signals detected by said photo-electric conversion elements, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of said vertical and horizontal switching MOS transistors respectively, and a switching gate MOS transistor connected between the horizontal switching MOS transistors and the associated signal output terminal.
Claim 2
Dependent Claim
73 words
A solid-state imaging device comprising a two-dimensional array of photo-electric conversion elements, vertical and horizontal switching MOS transistors for transferring, to a signal output terminal, signals detected by said photo-electric conversion elements, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of said vertical and horizontal switching MOS transistors respectively, and a switching gate MOS transistor connected between the horizontal switching MOS transistors and the associated signal output terminal.
Claim 3
Dependent Claim
27 words
A solid-state imaging device as claimed in claim 1, wherein said switching gate MOS transistor is turned on when said horizontal switching MOS transistor is turned off.
Claim 4
Dependent Claim
35 words
A solid-state imaging device as claimed in claim 2, wherein a capacitance is connected at one end with the horizontal signal output line between said switching gate MOS transistor and said horizontal switching MOS transistors.
Claim 5
Dependent Claim
18 words
A solid-state imaging device as claimed in claim 3, wherein said capacitance is of MIS type variable capacitance.
Claim 6
Dependent Claim
33 words
A solid-state imaging device as claimed in claim 4, wherein a predetermined voltage is applied to the other end of said MIS type variable capacitance while said horizontal switching MOS transistor is conducting.
Claim 7
Dependent Claim
35 words
A solid-state imaging device as claimed in claim 2, wherein a capacitance is connected at its one end with the horizontal signal output line between said switching gate MOS transistor and said signal output terminal.
Claim 8
Dependent Claim
18 words
A solid-state imaging device as claimed in claim 6, wherein said capacitance is of MIS type variable capacitance.
Claim 9
Dependent Claim
33 words
A solid-state imaging device as claimed in claim 7, wherein a predetermined voltage is applied to the other end of said MIS type variable capacitance while said switching gate MOS transistor is conducting.
Claim 10
Dependent Claim
33 words
A solid-state imaging device as claimed in claim 5 or 8, wherein said predetermined voltage has the same polarity as the voltage applied to the gate electrode of said switching gate MOS transistor.
Claim 11
Dependent Claim
33 words
A solid-state imaging device as claimed in claim 5 or 8, wherein said predetermined voltage is opposite in polarity to the voltage applied to the gate electrode of said switching gate MOS transistor.
Claim 12
Dependent Claim
23 words
A solid-state imaging device as claimed in claim 1, wherein said horizontal scanning circuit supplies discontinuously chained horizontal scanning pulses with intervals therebetween.
References Cited (Backward Citations)
US4189749A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-16 | 1985-05-18 | 1985-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-16 | 1989-05-18 | 1989-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-16 | 1993-05-18 | 1993-11-17 | $7700.00 | Window Closed / Lapsed |