Method of purifying silicon

Claim 1

A method of treating silicon having a percentage of impurities therein of at least 0.5%, thereby economically improving the purity thereof so that the resulting silicon will be of photovoltaic grade but less than semiconductor grade purity, comprising (a) placing a charge of impure silicon having at least 0.5% impurities in a container that remains inert at a temperature at which silicon is in a freely molten state, (b) heating said impure silicon in said container to a temperature at which all of said charge has melted and there is no liquid-solid interface between melted and unmelted silicon and impurities rise to the surface of the silicon, but not to a temperature at which the inert container will substantially react with the silicon, (c) providing a non-oxidizing gaseous atmosphere at the surface of the molten silicon, said atmosphere being substantially free of water vapor and any other gas with which the silicon will react, (d) causing a flow of said gaseous atmosphere over the surface of the molten silicon so that impurities at the surface of the molten silicon are carried away from said surface by said atmosphere, and (e) thereafter cooling said silicon from its molten state to a temperature below its solidification point to form a solid silicon having a degree of purity greater than 99.5% but less than semiconductor grade silicon and suitable for use as a host material in photovoltaic cells.

Claim 2

A method of treating silicon having a percentage of impurities therein of at least 0.5%, thereby economically improving the purity thereof so that the resulting silicon will be of photovoltaic grade but less than semiconductor grade purity, comprising (a) placing a charge of impure silicon having at least 0.5% impurities in a container that remains inert at a temperature at which silicon is in a freely molten state, (b) heating said impure silicon in said container to a temperature at which all of said charge has melted and there is no liquid-solid interface between melted and unmelted silicon and impurities rise to the surface of the silicon, but not to a temperature at which the inert container will substantially react with the silicon, (c) providing a non-oxidizing gaseous atmosphere at the surface of the molten silicon, said atmosphere being substantially free of water vapor and any other gas with which the silicon will react, (d) causing a flow of said gaseous atmosphere over the surface of the molten silicon so that impurities at the surface of the molten silicon are carried away from said surface by said atmosphere, and (e) thereafter cooling said silicon from its molten state to a temperature below its solidification point to form a solid silicon having a degree of purity greater than 99.5% but less than semiconductor grade silicon and suitable for use as a host material in photovoltaic cells.