Crystal oscillator including a MOS-capacitor

Claim 1

A semiconductor device comprising a semiconductor substrate of first conductivity type; a semiconductor layer of second conductivity type overlying said semiconductor substrate; an insulating layer on said semiconductor layer; a conductive layer formed on said insulating layer; a highly doped zone of said second conductivity type formed in the surface of said semiconductor layer; said highly doped zone, said insulating layer, and said conductive layer formaing a MOS-capacitor; a further zone of said first conductivity type entirely surrounding said highly doped zone and interposed between said highly doped zone and said semiconductor layer; and a separate connection electrode at each of said highly doped zone, said further zone, and said semiconductor layer; an emitter follower transistor being connected in parallel to the barrier layer capacitance between said highly doped zone and said further zone; and said device further comprising a tunable oscillator including a differential amplifier, a current distributor controlled by a control voltage and being disposed in a branch of said differential amplifier, a phase shifting element including said MOS-capacitor, and a feedback path present between said phase-shifting element and input to said differential amplifier, said feedback path comprising a quartz oscillator and said emitter follower transistor, said barrier layer capacitance between said highly doped zone of said second conductivity type and said further zone of said first conductivity type being connected in parallel to the emitterbase current path of said emitter follower transistor, and the connection point between additional barrier layer capacitances of said device being connected to a supply voltage.