US4297189A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposition of ordered crystalline films
Assignee: Boeing North American Inc
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Filing: 1980-06-27
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Granted: 1981-10-27
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Expires: 2000-06-27
Abstract
Abstract Deposition of ordered polycrystalline films of zinc oxide and other materials having a strongly preferred crystal growth direction and a high degree of symmetry about the preferred direction is achieved consistently by disposing a charged electrode in a sputtering chamber to limit bombardment of the film and underlying substrate by charged particles.
Inventors
- 👤 Elroy C. Smith, Jr.
- 👤 Shi K. Yao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:14
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/22; C23C14/34
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
196 words
Apparatus for forming films of ordered polycrystalline material, comprising: a cross-field radio frequency magnetron sputtering apparatus having a chamber adapted for the removal of material from a hollow cylindrical target cathode by ionic bombardment and for the deposition of said material on the surface of a selected object, wherein the elements for sputtering include said cathode and a central disk type anode, both mounted at the top of said chamber spaced apart from each other by a small distance; a fixture for supporting said selected object spaced apart from said sputtering elements by a significant distance, said fixture having means for mounting said selected object disposed at an angle relative to said sputtering elements, wherein said angle is selected to cause the net flux of said material from said cathode to be received by said selected object substantially normal to its upper surface; and means for deflecting charged particles away from said selected object, said deflecting means comprising an electrode disposed on said fixture in the vicinity of a mounting location for said selected object, wherein said electrode is electrically isolated from said sputtering elements; and means for applying a fixed electric potential to said electrode.
Claim 2
Dependent Claim
196 words
Apparatus for forming films of ordered polycrystalline material, comprising: a cross-field radio frequency magnetron sputtering apparatus having a chamber adapted for the removal of material from a hollow cylindrical target cathode by ionic bombardment and for the deposition of said material on the surface of a selected object, wherein the elements for sputtering include said cathode and a central disk type anode, both mounted at the top of said chamber spaced apart from each other by a small distance; a fixture for supporting said selected object spaced apart from said sputtering elements by a significant distance, said fixture having means for mounting said selected object disposed at an angle relative to said sputtering elements, wherein said angle is selected to cause the net flux of said material from said cathode to be received by said selected object substantially normal to its upper surface; and means for deflecting charged particles away from said selected object, said deflecting means comprising an electrode disposed on said fixture in the vicinity of a mounting location for said selected object, wherein said electrode is electrically isolated from said sputtering elements; and means for applying a fixed electric potential to said electrode.
Claim 3
Dependent Claim
14 words
The apparatus recited in claim 1, wherein said electrode is insulated from said fixture.
Claim 4
Dependent Claim
22 words
The apparatus recited in claim 2, wherein said means for applying a fixed electric potential holds said electrode at a positive potential.
Claim 5
Dependent Claim
17 words
The apparatus recited in claim 3, wherein said fixture is grounded to the interior of said chamber.
Claim 6
Dependent Claim
12 words
The apparatus recited in claim 3, wherein said fixture is electrically floating.
Claim 7
Dependent Claim
14 words
The apparatus recited in claim 3, wherein said positive potential is about fifteen volts.
Claim 8
Dependent Claim
12 words
The apparatus recited in claim 1, wherein said electrode comprises a ring.
Claim 9
Dependent Claim
12 words
The apparatus recited in claim 1, wherein said electrode comprises a grid.
Claim 10
Dependent Claim
12 words
The apparatus recited in claim 1, wherein said electrode comprises a screen.
Claim 11
Dependent Claim
22 words
The apparatus recited in claim 1, wherein said means for applying a fixed electric potential holds said electrode at a positive potential.
Claim 12
Dependent Claim
18 words
The apparatus recited in claim 10, wherein said fixture is held at the same potential as said electrode.
Claim 13
Dependent Claim
14 words
The apparatus recited in claim 10, wherein said positive potential is about fifteen volts.
Claim 14
Independent Claim
102 words
A method of forming a film of ordered polycrystalline material on a selected object in a cross-field radio frequency magnetron sputtering chamber having sputtering elements in the ceiling thereof, said method comprising the steps of: orienting a line normal to the deposition surface of said selected object at an angle of about sixty degrees away from the vertical; and deflecting charged particles away from said selected object by means of a positively charged electrode disposed in the vicinity of said selected object and spaced a significant distance away from said sputtering elements, wherein said electrode is electrically isolated from said sputtering elements.
Claim 15
Independent Claim
102 words
A method of forming a film of ordered polycrystalline material on a selected object in a cross-field radio frequency magnetron sputtering chamber having sputtering elements in the ceiling thereof, said method comprising the steps of: orienting a line normal to the deposition surface of said selected object at an angle of about sixty degrees away from the vertical; and deflecting charged particles away from said selected object by means of a positively charged electrode disposed in the vicinity of said selected object and spaced a significant distance away from said sputtering elements, wherein said electrode is electrically isolated from said sputtering elements.
Claim 16
Dependent Claim
16 words
The method recited in claim 13, wherein said material has a strongly preferred crystal growth direction.
Claim 17
Dependent Claim
21 words
The method recited in claim 14, wherein said material has a high degree of symmetry about said preferred crystal growth direction.
Claim 18
Dependent Claim
14 words
The method recited in claim 15, wherein said material has a hexagonal crystal structure.
Claim 19
Dependent Claim
12 words
The method recited in claim 16, wherein said material is zinc oxide.
Claim 20
Dependent Claim
43 words
The method recited in claim 17, further comprising the step of depositing said film to a minimum thickness of about 2000 angstroms and to a minimum thickness of at least about 8000 angstroms when said selected object includes aluminum on the surface thereof.
Claim 21
Dependent Claim
37 words
The method recited in claim 18, further comprising the step of maintaining a partial pressure of oxygen in said chamber at about ten percent of the total pressure during sputtering and at about 200 microns during cooling.
Claim 22
Dependent Claim
31 words
The method recited in claim 19, further comprising the step of controlling the temperature of said selected object to lie in the range from 180 to 200 degrees centigrade during deposition.
Claim 23
Dependent Claim
28 words
The method recited in claim 20, further comprising the step of maintaining the deposition rate of said material relatively low at about 70 to 85 angstroms per minute.
Claim 24
Dependent Claim
25 words
The method recited in claim 21, further comprising the step of preheating the target cathode of said chamber prior to the time deposition is begun.
Claim 25
Dependent Claim
26 words
The method recited in claim 22, further comprising the step of sputter etching the surface of said selected object prior to the time deposition is begun.
Claim 26
Dependent Claim
29 words
The method recited in claim 23, further comprising the step of maintaining a mass flow rate of argon in said chamber of about twenty-five standard cubic centimeters per minute.
Claim 27
Dependent Claim
23 words
The method recited in claim 24, further comprising the step of maintaining a total gas pressure in said chamber at about 6.8 microns.
Claim 28
Dependent Claim
16 words
The method recited in claim 16; wherein said material is zinc oxide, sapphire, or beryllium oxide.
Claim 29
Dependent Claim
12 words
The method recited in claim 16, wherein said material is a chalcogenide.
Claim 30
Dependent Claim
23 words
The method recited in claim 16, wherein said material is vanadium oxide, chromium oxide, gallium oxide, cesium oxide, mercury oxide, or titanium oxide.
Claim 31
Dependent Claim
15 words
The method recited in claim 15, wherein said material is barium oxide or palladium oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-26 | 1985-04-27 | 1985-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-26 | 1989-04-27 | 1989-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-26 | 1993-04-27 | 1993-10-27 | $7700.00 | Window Closed / Lapsed |