Rf sputtering method
Abstract
Abstract A METHOD AND SYSTEM FOR RF SPUTTERING THIN CONDUCTING AND THIN INSULATING FILMA ON A SEMICONDUCTOR SUBSTRATE USING A FIRST ELECTRODE FOR SUPPORTING A SOURCE MATERIAL AND AN APERTURED SECOND ELECTRODE. THE RF VOLTAGE IS APPLIED ACROSS THE FIRST AND SECOND ELECTRODES. THE SUBSTRATE IS SUPPORTED BY A THIRD ELECTRODE AND EXPOSED TO ATOMS SPUTTERED FROM THE SOURCE WHICH PASS THROUGH THE APERTURED SECOND ELECTRODE. THE THIRD ELECTRODE MAY BE AT THE SAME POTENTIAL AS THE SECOND ELECTRODE, OR AT A DIFFERENT POTENTIAL TO CARRY OUT BIAS SPUTTERING. THE SYSTEM INCLUDES MULTIPLE PAIRS OF FIRST AND SECOND ELECTRODES FOR MULTIPLE FILM DEPOSITION WITHOUT BREADING VACUUM AND A ROTATING THIRD ELECTRODE WHICH MOVES THE SUBSTRATES PAST THE APERTURES IN THE SECOND ELECTRODES DURING SPUTTERING TO ELIMI- NATE SHADOWING AND TO FURTHER ENHANCE COOLING. A SHUTTER IS PROVIDED TO PREVENT CROSSCONTAMINATION OF THE IDLE SOURCES AND THE FILM BEING DEPOSITED ON THE SUBSTRATE.
Inventors
- 👤 John H Cash Jr
- 👤 James A Cunningham
Bibliographic Details
Claims Analysis
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| 3.5 Years (Year 4) | 1975-07-18 | 1976-01-17 | 1976-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-18 | 1980-01-17 | 1980-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-18 | 1984-01-17 | 1984-07-18 | $7700.00 | Window Closed / Lapsed |