Patent US4296146A successfully refreshed from Google Patents.
US4296146A
Expired / Lapsed
US
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Method for removing resist layer from substrate with combustible gas burnoff
Assignee: Texas Instruments Inc
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Filing: 1977-12-02
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Granted: 1981-10-20
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Expires: 1997-12-02
Abstract
Abstract Method and apparatus for removing a resist layer from a substrate surface of different material, such as a semiconductor slice, in the fabrication of an electronic structure, involving exposure of the resist layer to a flame from a combustible gas. The resist layer is employed as a mask in patterning the substrate surface via selective etching, diffusion, or other procedures and is removed from the substrate when it has served its purpose. The resist material may include not only light-sensitive resists more commonly termed "photoresists", but also electron beam-sensitive resists, and resists applied by stencil techniques. The resist layer is exposed to the flame for a period of time sufficient to decompose the resist material, the length of the exposure being a function of several factors, including the type of resist, the thickness of the layer, and the manufacturing processes to which the slice was subjected prior to the resist removal step. No vacuum or other special ambient atmospheric condition is required for this resist removal process, but the slice may be positioned on a belt or other mobile platform and the means for producing the flame may also be adjustable in order to effectively vary the parameters of exposure time and temperature, depending on the aforementioned factors.
Inventors
- 👤 Thomas C. Penn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:21
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H05; H05K; H05K3/00; H05K3/22; H05K3/28; H05K3/288
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
184 words
In the fabrication of an electronic structure including a layer of semiconductor material and at least one electronic device formed thereon, wherein a patterned layer of resist material is disposed on a surface of different material than the resist material, a method of removing the patterned layer of resist material from the surface of different material, said method comprising: decomposing resist material via chemical reaction from said layer of resist material by exposing said layer of resist material to the flame of a combustible gas, wherein the flame contains resist-attacking reactive products; retaining the structure including the surface of different material in a condition, which is essentially unaltered physically and chemically with respect to its condition prior to the exposure of the layer of resist material to the flame of the combustible gas, during the decomposition of resist material; and discontinuing the exposure of the structure to the flame of the combustible gas when only said layer of resist material has been removed by decomposition of the resist material thereof while the structure including the surface of different material remains in its unaltered condition.
Claim 2
Dependent Claim
184 words
In the fabrication of an electronic structure including a layer of semiconductor material and at least one electronic device formed thereon, wherein a patterned layer of resist material is disposed on a surface of different material than the resist material, a method of removing the patterned layer of resist material from the surface of different material, said method comprising: decomposing resist material via chemical reaction from said layer of resist material by exposing said layer of resist material to the flame of a combustible gas, wherein the flame contains resist-attacking reactive products; retaining the structure including the surface of different material in a condition, which is essentially unaltered physically and chemically with respect to its condition prior to the exposure of the layer of resist material to the flame of the combustible gas, during the decomposition of resist material; and discontinuing the exposure of the structure to the flame of the combustible gas when only said layer of resist material has been removed by decomposition of the resist material thereof while the structure including the surface of different material remains in its unaltered condition.
Claim 3
Dependent Claim
30 words
A method as set forth in claim 1, wherein said layer of resist material is exposed to said flame such that the flame directly contacts the layer of resist material.
Claim 4
Dependent Claim
16 words
A method as set forth in claim 2, wherein said combustible gas comprises a hydrogen-oxygen mixture.
Claim 5
Dependent Claim
24 words
A method as set forth in claim 3, wherein hydrogen is present in said combustible gas mixture in a range of 5-95% by volume.
Claim 6
Dependent Claim
24 words
A method as set forth in claim 4, wherein hydrogen is present in said combustible gas mixture in a range of 40-67% by volume.
Claim 7
Dependent Claim
34 words
A method as set forth in claim 2, wherein said layer of resist material is subjected to a plurality of exposures to said flame, each exposure being for a relatively short period of time.
Claim 8
Dependent Claim
65 words
A method as set forth in claim 2, further including placing the structure on which the resist layer is disposed on conveyor means, and passing the conveyor means under said flame so that the resist layer is exposed to said flame as a result of the motion of said conveyor means operating to move said structure with said resist layer disposed thereon under said flame.
Claim 9
Dependent Claim
41 words
A method as set forth in claim 7, further including regulating the stopping and starting of said conveyor means so as to momentarily position said structure with said resist layer disposed thereon under said flame for a predetermined period of time.
Claim 10
Dependent Claim
49 words
A method as set forth in claim 2, further including monitoring the temperature of the structure during the exposure of said layer of resist material to the flame of the combustible gas to avoid overheating in retaining the structure including the surface of different material in its unaltered condition.
Claim 11
Dependent Claim
37 words
A method as set forth in claim 9, wherein the structure is heated to a temperature on the order of 60°-360° C. while the layer of resist material is exposed to the flame of the combustible gas.
Claim 12
Dependent Claim
33 words
A method as set forth in claim 10, wherein the layer of resist material is exposed to the flame of the combustible gas over a time period of the order of 2-15 seconds.
Claim 13
Dependent Claim
268 words
In the fabrication of an electronic structure including a layer of semiconductor material and at least one electronic device formed thereon, wherein a patterned layer of resist material is disposed on a surface of different material than the resist material, a method of removing the patterned layer of resist material from the surface of different material, said method comprising: positioning the structure with the resist layer thereon on a support member; rotating the support member; decomposing resist material via chemical reaction from said layer of resist material by exposing said layer of resist material to the flame of a combustible gas impinging on the resist layer, wherein the flame contains resist-attacking reactive products and emanates from a flame outlet of an arm suspended over the support member, in response to the rotation of the support member passing the structure with the resist layer thereon beneath the flame outlet; retaining the structure including the surface of different material in a condition, which is essentially unaltered physically and chemically with respect to its condition prior to the exposure of the resist layer to the flame of the combustible gas, during the decomposition of resist material; and repeating the exposure of the resist layer to the flame by continuing the rotation of the support member to pass the structure with the resist layer thereon beneath the flame outlet for each revolution of the support member until all of the resist layer has been removed by decomposition of the resist material thereof in response to the flame exposure while the structure including the surface of different material remains in its unaltered condition.
Claim 14
Dependent Claim
268 words
In the fabrication of an electronic structure including a layer of semiconductor material and at least one electronic device formed thereon, wherein a patterned layer of resist material is disposed on a surface of different material than the resist material, a method of removing the patterned layer of resist material from the surface of different material, said method comprising: positioning the structure with the resist layer thereon on a support member; rotating the support member; decomposing resist material via chemical reaction from said layer of resist material by exposing said layer of resist material to the flame of a combustible gas impinging on the resist layer, wherein the flame contains resist-attacking reactive products and emanates from a flame outlet of an arm suspended over the support member, in response to the rotation of the support member passing the structure with the resist layer thereon beneath the flame outlet; retaining the structure including the surface of different material in a condition, which is essentially unaltered physically and chemically with respect to its condition prior to the exposure of the resist layer to the flame of the combustible gas, during the decomposition of resist material; and repeating the exposure of the resist layer to the flame by continuing the rotation of the support member to pass the structure with the resist layer thereon beneath the flame outlet for each revolution of the support member until all of the resist layer has been removed by decomposition of the resist material thereof in response to the flame exposure while the structure including the surface of different material remains in its unaltered condition.
Claim 15
Dependent Claim
24 words
A method as set forth in claim 3, wherein the resist-attacking reactive products contained in the flame of the combustible gas include monatomic oxygen.
Claim 16
Dependent Claim
26 words
A method as set forth in claim 3, wherein the resist-attacking products contained in the flame of the combustible gas include ionic particles and monatomic oxygen.
Claim 17
Dependent Claim
24 words
A method as set forth in claim 12, wherein the resist-attacking reactive products contained in the flame of the combustible gas include monatomic oxygen.
Claim 18
Dependent Claim
27 words
A method as set forth in claim 12, wherein the resist-attacking reactive products contained in the flame of the combustible gas include ionic particles and monatomic oxygen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-19 | 1985-04-20 | 1985-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-19 | 1989-04-20 | 1989-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-19 | 1993-04-20 | 1993-10-20 | $7700.00 | Window Closed / Lapsed |