Recording material

Claim 2

A material for recording a high temperature energy source scanned imagewise by evaporating or thermally deforming the scanned portions by melting of at least one recording layer thereof by the heat energy of said high temperature energy source, which comprises a support and at least one recording layer, said at least one recording layer containing at least one distinct metal layer comprising at least one metal selected from the group consisting of Sn, Bi, In, Zn, Al and Cu and said recording layer also comprising at least one distinct compound layer comprising at least one compound selected from the group consisting of CrS, Cr 2 S, Cr 2 S 3 , MoS 2 , MnS, FeS, FeS 2 , CoS, Co 2 S 3 , NiS, Ni 2 S, PdS, Cu 2 S, Ag 2 S, ZnS, In 2 S 3 , In 2 S 2 , GeS X , wherein x is a positive integer of 2 to 9, SnS, SnS 2 , PbS, As 2 S 3 , Sb 2 S 3 , Bi 2 S 3 , MgF 2 , CaF 2 , RhF 3 , MoO, In 2 O, In 2 O 3 , GeO, and PbO, and at least one layer which contains one or more of said metals in combination with one or more of said compounds and wherein the total thickness of all metal layers present is from about 300 to about 1,500 A, the total thickness of all compound layers present is from about 10 to about 200 A, and the optical density of the at least one distinct metal layer is at least about 2.0.

Claim 3

The recording material of claim 1 wherein said at least one distinct compound layer is on said support, said at least one distinct metal layer is over said at least one distinct compound layer and said at least one layer containing one or more of said metals in combination with one or more of said compounds is the uppermost layer.

Claim 4

The recording material of claim 1 wherein said at least one compound is selected from the group consisting of NiS, In 2 O 3 , GeS x , wherein x is a positive integer of 2 to about 9, SnS and In 2 S 3 .

Claim 5

The recording material of claim 1 wherein the total thickness of all metal layers present is from about 300 A to about 1,000 A.

Claim 6

In a process for recording information on a recording material by imagewise scanning the recordng material with a high temperature energy source to evaporate or thermally deform by melting the scanned portions of a recording layer of the recording material by the heat energy of the high temperature energy source thereby removing said scanned portions of said recording layer, the improvement wherein the recording material comprises a support and at least one recording layer, said at least one recording layer containing at least one distinct metal layer comprising at least one metal selected from the group consisting of Sn, Bi, In, Zn, Al and Cu and said recording layer also comprising at least one distinct compound layer comprising at least one compound selected from the group consisting of CrS, Cr 2 S, Cr 2 S 3 , MoS 2 , MnS, FeS, FeS 2 , CoS, Co 2 S 3 , NiS, Ni 2 S, PdS, Cu 2 S, Ag 2 S, ZnS, In 2 S 3 , In 2 S 2 , GeS x , wherein x is a positive integer of 2 to 9, SnS, SnS 2 , PbS, As 2 S 3 , Sb 2 S 3 , Bi 2 S 3 , MgF 2 , CaF 2 , RhF 3 , MoO, InO, In 2 O, In 2 O 3 , GeO, and PbO, and wherein the total thickness of all metal layers present is from to 300 to 1500 A, the total thickness of all compound layers present is from about 10 to about 200 A, and the optical density of the at least one distinct metal layer is at least about 2.0.

Claim 7

In a process for recording information on a recording material by imagewise scanning the recordng material with a high temperature energy source to evaporate or thermally deform by melting the scanned portions of a recording layer of the recording material by the heat energy of the high temperature energy source thereby removing said scanned portions of said recording layer, the improvement wherein the recording material comprises a support and at least one recording layer, said at least one recording layer containing at least one distinct metal layer comprising at least one metal selected from the group consisting of Sn, Bi, In, Zn, Al and Cu and said recording layer also comprising at least one distinct compound layer comprising at least one compound selected from the group consisting of CrS, Cr 2 S, Cr 2 S 3 , MoS 2 , MnS, FeS, FeS 2 , CoS, Co 2 S 3 , NiS, Ni 2 S, PdS, Cu 2 S, Ag 2 S, ZnS, In 2 S 3 , In 2 S 2 , GeS x , wherein x is a positive integer of 2 to 9, SnS, SnS 2 , PbS, As 2 S 3 , Sb 2 S 3 , Bi 2 S 3 , MgF 2 , CaF 2 , RhF 3 , MoO, InO, In 2 O, In 2 O 3 , GeO, and PbO, and wherein the total thickness of all metal layers present is from to 300 to 1500 A, the total thickness of all compound layers present is from about 10 to about 200 A, and the optical density of the at least one distinct metal layer is at least about 2.0.

Claim 8

The process of claim 5 wherein the energy source has an intensity of about 10 3 watt/cm 2 or higher.

Claim 9

The process of claim 6 wherein the recording material is scanned with a laser beam.

Claim 10

The process of claim 5 wherein said at least one distinct compound layer is subjected to the high temperature energy source prior to said at least one distinct metal layer.

Claim 11

The process of claim 5 wherein there is also present on said support at least one layer which contains one or more of said metals in combination with one or more of said compounds.

Claim 12

The process of claim 9 wherein said at least one distinct compound layer is on said support, said at least one distinct metal layer is over said at least one distinct compound layer and said at least one layer containing one or more of said metals in combination with one or more of said compounds is the uppermost layer.

Claim 13

The recording material of claim 9, wherein the volume ratio of said one or more compounds to said one or more metals is about 1/5 to about 1/30 in said one layer.