High voltage MOSFET without field plate structure

Claim 2

A high voltage metal oxide semiconductor FET structure having an integrated monolithic circuit on a substrate with a closed geometry configuration including a drain area having a relative center axis introduced in the substrate, a source area introduced in the substrate relatively adjacent to the drain area, a channel area introduced in the substrate between the source area and the drain area, and a drift area introduced in the substrate between the channel area and the drain area comprising: (a) first oxide means relatively disposed as a relatively thick layer over the drift area for use as a field dielectric; (b) second oxide means disposed as a relatively thin layer over the channel area for use as a channel dielectric; (c) gate electrode means relatively disposed over said second oxide means and spaced from the drain area for controlling the potential and for turning the current on and off as between the source and drain areas. (d) two or more doped area means implanted in the substrate under said first oxide means and offset from said gate electrode means and the drain area having carrier concentrations relatively below degeneracy for stretching out field lines away from the drain area for prevention of breakdown at the junction of the drain areas with the substrate.

Claim 3

The high voltage metal oxide semiconductor FET structure of claim 1 wherein in the off mode of the structure, said two or more doped area means is operative to float at a relative potential between that of the source and drain areas for supporting the high voltage therebetween.

Claim 4

The high voltage metal oxide semiconductor FET structure of claim 1 wherein in the on mode of the structure, said two or more doped area means initial ring at a potential between that of the source and drain areas is operative to provide injection and collection for a given period while the potential thereof is relatively higher than that of the substrate proximate thereto.

Claim 5

The high voltage metal oxide semiconductor FET structure of claim 1 wherein the relative spatial spacing between said two or more doped area means and the drain area is relatively greater than the coupling spatial distance.

Claim 6

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said two or more doped area means relatively acumulates when the structure is in it's on mode and totally depletes the drift area to support the relative potential as between the source and drain areas when the structure is in it's off mode.

Claim 7

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said two or more dope area means is doped N-type.

Claim 8

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said two or more doped area means is doped P-type.

Claim 9

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said two or more doped area means is doped N type with relative compensation.

Claim 10

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said two or more doped area means is doped P type with relative compensation.

Claim 11

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said first oxide means is silicon dioxide.

Claim 12

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said second oxide means is silicon dioxide.

Claim 13

The high voltage metal oxide semiconductor FET structure of claim 1 wherein said gate electrode means is polysilicon.

Claim 14

A HVMOSFET device for a driver array having a monolithic integrated closed geometry configuration on a substrate, comprising: first means having a relative center axis implanted in the substrate for function as a drain region, second means implanted in the substrate relatively adjacent to said first means for function as a source region, third means implanted in the substrate relatively interdisposed between said second and first means for function as a channel region, and fourth means implanted in the substrate relatively interposed between said third and first means for function as a drift region; (b) field oxide means disposed as a relatively thick layer over said fourth means for operation as a field dielectric; (c) channel oxide means disposed as a relatively thin layer over said third means for operation as a channel dielectric; (d) gate means disposed over said channel oxide means and relatively spatially separated from said drain means for controlling the potential and for turning on and off the current as between the first and second means, and; (e) two or more doped area means implanted in the substrate relatively beneath said field oxide means and relatively offset from said gate means and said first means having carrier concentration relatively below degeneracy for bending field line away from the junction of said first means with the substrate thereby relatively obviating voltage breakdown.

Claim 15

A HVMOSFET device for a driver array having a monolithic integrated closed geometry configuration on a substrate, comprising: first means having a relative center axis implanted in the substrate for function as a drain region, second means implanted in the substrate relatively adjacent to said first means for function as a source region, third means implanted in the substrate relatively interdisposed between said second and first means for function as a channel region, and fourth means implanted in the substrate relatively interposed between said third and first means for function as a drift region; (b) field oxide means disposed as a relatively thick layer over said fourth means for operation as a field dielectric; (c) channel oxide means disposed as a relatively thin layer over said third means for operation as a channel dielectric; (d) gate means disposed over said channel oxide means and relatively spatially separated from said drain means for controlling the potential and for turning on and off the current as between the first and second means, and; (e) two or more doped area means implanted in the substrate relatively beneath said field oxide means and relatively offset from said gate means and said first means having carrier concentration relatively below degeneracy for bending field line away from the junction of said first means with the substrate thereby relatively obviating voltage breakdown.

Claim 16

The HVMOSFET device of claim 13 wherein in the off mode of the device, said two or more doped area means is operative to float at a relative potential between that of said second means and said first means for supporting the high voltage therebetween.

Claim 17

The HVMOSFET device of claim 13 wherein in the on mode of the device, said two or more doped area means initializing at a relative potential between that of said second means and said first means is operative to provide injection and collection for a predetermined period when the potential threat is relatively higher than that of the adjacent substrate.

Claim 18

The HVMOSFET device of claim 13 wherein the relative spatial gap between said two or more doped area means and said first means is relatively greater than the distance of coupling.

Claim 19

The HVMOSFET device of claim 13 wherein said two or more doped area means relatively accumulates when the device is in it's on mode and totally depletes said fourth means to support the potential between said first and second means where the device is in it's off mode.

Claim 20

The HVMOSFET device of claim 13 wherein said two or more doped area means is doped N-type.

Claim 21

The HVMOSFET device of claim 13 wherein said two or more doped area means is doped P-type.

Claim 22

The HVMOSFET device of claim 14 wherein said two or more doped area means is doped N type with relative compensation.

Claim 23

The HVMOSFET device of claim 13 wherein said two or more doped area means is doped P type with relative compensation.

Claim 24

The HVMOSFET device of claim 13 wherein said field oxide means is silicon dioxide.

Claim 25

The HVMOSFET device of claim 13 wherein said channel oxide means is silicon dioxide.

Claim 26

The HVMOSFET device of claim 13 wherein said gate means is polysilicon.