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US4287383A
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Cadmium sulfide photovoltaic cell of improved efficiency
Assignee: UNVERSITY OF DELAWARE
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Filing: 1980-05-12
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Granted: 1981-09-01
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Expires: 2000-05-12
Abstract
Abstract Cadmium sulfide photovoltaic cells of improved efficiency comprising transparent metal conducting electrode layer, first cadmium semi-conductor layer, short-barrier layer, second cadmium sulfide semi-conductor layer, barrier layer and collecting metal electrode layer.
Inventors
- 👤 Terry M. Peterson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:33
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F10/00; H10F10/10; H10F10/16; H10F10/169; H10F19/00; H10F19/40; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/543
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
A cadmium sulfide photovoltaic cell of improved efficiency comprising successive layers of a transparent conducting electrode layer, a first cadmium sulfide semi-conductor layer, a short-barrier layer comprising cadmium sulfide, said short-barrier layer containing a minor portion of a metal selected from the group consisting of titanium aluminum, chromium, vanadium, boron, magnesium, beryllium and scandium, a second cadmium sulfide semi-conductor layer, a barrier layer and a collecting metal electrode layer.
Claim 2
Dependent Claim
69 words
A cadmium sulfide photovoltaic cell of improved efficiency comprising successive layers of a transparent conducting electrode layer, a first cadmium sulfide semi-conductor layer, a short-barrier layer comprising cadmium sulfide, said short-barrier layer containing a minor portion of a metal selected from the group consisting of titanium aluminum, chromium, vanadium, boron, magnesium, beryllium and scandium, a second cadmium sulfide semi-conductor layer, a barrier layer and a collecting metal electrode layer.
Claim 3
Dependent Claim
21 words
A cadmium sulfide photovoltaic cell of improved efficiency according to claim 1 wherein said transparent conducting electrode layer is tin oxide.
Claim 4
Dependent Claim
21 words
A cadmium sulfide photovoltaic cell of improved efficiency according to claim 1 wherein said transparent conducting electrode layer is indium oxide.
Claim 5
Dependent Claim
21 words
A cadmium sulfide photovoltaic cell of improved efficiency according to claim 1 wherein said transparent conducting electrode layer is indium-tin oxide.
Claim 6
Dependent Claim
29 words
A cadmium sulfide photovoltaic cell of improved efficiency according to claim 1 wherein said short-barrier layer is cadmium sulfide containing a minor proportion of aluminum oxide or aluminum sulfide.
Claim 7
Dependent Claim
23 words
a cadmium sulfide photovoltaic cell of improved efficiency according to claim 1 wherein said collecting metal electrode layer is a copper metal electrode.
Claim 8
Dependent Claim
103 words
A process for preparing thin film polycrystalline photovoltaic cells of improved efficiency which comprises forming a first cadmium sulfide semiconductor layer on a transparent conducting electrode layer, forming a short-barrier layer comprising cadmium sulfide, said short-barrier layer containing a minor proportion of a metal selected from the group consisting of titanium aluminum, chromium, vanadium, boron, magnesium, beryllium and scandium on said first cadmium sulfide semi-conductor layer, forming a second cadmium sulfide semi-conductor layer on said short-barrier layer, forming a copper sulfide barrier layer on said second cadmium sulfide semi-conductor layer, and forming a copper collecting electrode layer on said copper sulfide barrier layer.
Claim 9
Dependent Claim
103 words
A process for preparing thin film polycrystalline photovoltaic cells of improved efficiency which comprises forming a first cadmium sulfide semiconductor layer on a transparent conducting electrode layer, forming a short-barrier layer comprising cadmium sulfide, said short-barrier layer containing a minor proportion of a metal selected from the group consisting of titanium aluminum, chromium, vanadium, boron, magnesium, beryllium and scandium on said first cadmium sulfide semi-conductor layer, forming a second cadmium sulfide semi-conductor layer on said short-barrier layer, forming a copper sulfide barrier layer on said second cadmium sulfide semi-conductor layer, and forming a copper collecting electrode layer on said copper sulfide barrier layer.
Claim 10
Dependent Claim
14 words
A process according to claim 7 wherein the layers are formed by spray deposition.
References Cited (Backward Citations)
US4086101A
Cited
US4159914A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-31 | 1985-03-02 | 1985-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-31 | 1989-03-02 | 1989-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-31 | 1993-03-02 | 1993-09-01 | $7700.00 | Window Closed / Lapsed |