Semiconductor integrated circuit device including element for monitoring characteristics of the device

Claim 2

A semiconductor device comprising a semiconductor substrate, a plurality of circuit elements in said substrate, each of said circuit elements including a first semiconductor region of said substrate, at least one monitoring circuit element formed in said substrate and including a second semiconductor region of said substrate having substantially the same structure and size as said first semiconductor region of said circuit element to be monitored, an insulating film covering at least a portion of the major surface of said substrate, a characteristic-monitoring electrode of a silicon layer connected to said second semiconductor region of said monitoring circuit element and extending on said insulating film, said characteristic monitoring electrode having a portion on said silicon layer on said insulating film remote from said monitoring circuit element and adapted to receive a probe of a characteristics-measuring apparatus, and a metallic layer electrically connected to said first semiconductor region of said circuit element to be monitored.

Claim 3

The semiconductor device of claim 1, in which the area of said portion is greater than the areas of the other parts of said characteristic-monitoring electrodes.

Claim 4

The semiconductor device of claim 1, in which said each of said characteristic-monitoring electrodes of said silicon layer is embedded in a silicon oxide layer formed by the selective oxidation of said silicon layer.

Claim 5

A semiconductor device comprising a semiconductor substrate, a plurality of transistor elements formed in said substrate, each of said transistor elements including a first base region, a first emitter region, and a first collector region in said substrate, at least one monitoring transistor element formed in said substrate and including a second base region, a second emitter region, and a second collector region in said substrate with substantially the same structure and size as said first base region, said first collector region, respectively, silicon electrodes formed on said first base region, said first emitter region and said first collector region, an insulating film selectively covering the major surface of said substrate, characteristic-monitoring electrodes of a silicon layer connected to said second base region, said second emitter region and said second collector region of said monitoring transistor element and extending on said insulating film, each of said characterstic-monitoring electrodes having a pad portion of said silicon layer on said insulating film remote from said monitoring transistor element and adapted to receive a probe of a measuring apparatus, and a metallic wiring layer connected to at least one of said silicon electrodes of said transistor element to be monitored.

Claim 6

A semiconductor device comprising a semiconductor substrate, a plurality of transistor elements formed in said substrate, each of said transistor elements including a first base region, a first emitter region, and a first collector region in said substrate, at least one monitoring transistor element formed in said substrate and including a second base region, a second emitter region, and a second collector region in said substrate with substantially the same structure and size as said first base region, said first collector region, respectively, silicon electrodes formed on said first base region, said first emitter region and said first collector region, an insulating film selectively covering the major surface of said substrate, characteristic-monitoring electrodes of a silicon layer connected to said second base region, said second emitter region and said second collector region of said monitoring transistor element and extending on said insulating film, each of said characterstic-monitoring electrodes having a pad portion of said silicon layer on said insulating film remote from said monitoring transistor element and adapted to receive a probe of a measuring apparatus, and a metallic wiring layer connected to at least one of said silicon electrodes of said transistor element to be monitored.

Claim 7

The semiconductor device of claim 4, in which te thickness of said silicon electrodes of said transistor element is substantially equal to that of said characteristic-monitoring electrodes.

Claim 8

A semiconductor integrated circuit device comprising a semiconductor substrate of one conductivity type, a plurality of island regions of the opposite conductivity type isolated from said substrate by a P-N junction, a plurality of circuit elements respectively formed in said plurality of island regions, each of said circuit elements including a first semiconductor region in said island region, a monitoring element formed in another of said island regions and including a second semiconductor region in said another island region having substantially the same structure and size as said first semiconductor region of said circuit element to be monitored, a silicon electrode contacted to said first semiconductor region of said circuit element to be monitored, an insulating film selectively covering the major surface of said substrate, a characteristic-monitoring electrode of a silicon layer connected to said second semiconductor region of said monitoring element and extending on said insulating film, said characteristic-monitoring electrode having a pad portion of said silicon layer on said insulating film remote from said monitoring element and adapted to receive a probe of a measuring apparatus, and a metallic wiring layer electrically connected to said first semiconductor region via said silicon electrode of said circuit element to be monitored.

Claim 9

A semiconductor integrated circuit device comprising a semiconductor substrate of one conductivity type, a plurality of island regions of the opposite conductivity type isolated from said substrate by a P-N junction, a plurality of circuit elements respectively formed in said plurality of island regions, each of said circuit elements including a first semiconductor region in said island region, a monitoring element formed in another of said island regions and including a second semiconductor region in said another island region having substantially the same structure and size as said first semiconductor region of said circuit element to be monitored, a silicon electrode contacted to said first semiconductor region of said circuit element to be monitored, an insulating film selectively covering the major surface of said substrate, a characteristic-monitoring electrode of a silicon layer connected to said second semiconductor region of said monitoring element and extending on said insulating film, said characteristic-monitoring electrode having a pad portion of said silicon layer on said insulating film remote from said monitoring element and adapted to receive a probe of a measuring apparatus, and a metallic wiring layer electrically connected to said first semiconductor region via said silicon electrode of said circuit element to be monitored.

Claim 10

The semiconductor integrated circuit device of claim 6, in which the thickness of said silicon electrode of said circuit element is substantially equal to that of said characteristic-monitoring electrode.

Claim 11

The semiconductor integrated circuit device of claim 6, in which said one of said circuit elements is a bipolar transistor.

Claim 12

The semiconductor integrated circuit device of claim 6, in which said one of said circuit elements is a resistor.

Claim 13

The semiconductor device of claim 1, in which the temperature which said metallic layer is able to withstand is lower than the temperature which said silicon layer is able to withstand.

Claim 14

A semiconductor device comprising a semiconductor substrate, an insulating film on the major surface of said substrate, a monitoring resistor element of a polycrystalline silicon formed on said insulating film, and first and second monitoring terminal electrodes formed of said polycrystalline silicon and connected to first and second parts of said monitoring resistor element, respectively, and extending on said insulating film, each of said monitoring terminal electrodes having a portion of said polycrystalline silicon on said insulating film remote from said monitoring resistor and adapted to receive a probe of a charactertistics-measuring apparatus.

Claim 15

A semiconductor device comprising a semiconductor substrate, an insulating film on the major surface of said substrate, a monitoring resistor element of a polycrystalline silicon formed on said insulating film, and first and second monitoring terminal electrodes formed of said polycrystalline silicon and connected to first and second parts of said monitoring resistor element, respectively, and extending on said insulating film, each of said monitoring terminal electrodes having a portion of said polycrystalline silicon on said insulating film remote from said monitoring resistor and adapted to receive a probe of a charactertistics-measuring apparatus.