US4283248A
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US
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Etching solution for tin-nickel alloy and process for etching the same
Assignee: Nitto Denko Corp
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Filing: 1980-02-01
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Granted: 1981-08-11
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Expires: 2000-02-01
Abstract
Abstract An etching solution containing 0.1 mol/l or more phosphoric acid, 0.05 mol/l or more pyrophosphoric acid, 0.1 mol/l or more phosphorous acid, 0.1 mol/l or more of a mixture of phosphoric, pyrophosphoric and/or phosphorous acids, molten phosphoric acid, molten pyrophosphoric acid, molten phosphorous acid or a molten mixture of phosphoric, pyrophosphoric and/or phosphorous acids, for use in etching a tin-nickel alloy; and a process for etching the tin-nickel alloy with the etching solution.
Inventors
- 👤 Takeshi Kakuhashi
- 👤 Kazuo Fukunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:57
CPC Classifications
C; C23; C23F; C23F1/00; C23F1/10; C23F1/14; C23F1/16; C23F1/30; C23F1/28; C23F1/44; H; H05; H05K; H05K3/00; H05K3/02; H05K3/06; H05K3/067
Claims Analysis
Total Claims: 48
Claim 1
Independent Claim
87 words
A process for etching a tin-nickel alloy which comprises etching the alloy at a temperature of greater than about 80° C. with a solution containing at least one phosphoric acid compound selected from the group consisting of 0.1 mol/l or more phosphoric acid, 0.05 mol/l or more pyrophosphoric acid, 0.1 mol/l or more phosphorous acid, 0.1 mol/l or more of a mixture of phosphoric, pyrophosphoric and/or phosphorous acids, molten phosphoric acid, molten pyrophosphoric acid, molten phosphorous acid and a molten mixture of phosphoric, pyrophosphoric and/or phosphorous acids.
Claim 2
Dependent Claim
87 words
A process for etching a tin-nickel alloy which comprises etching the alloy at a temperature of greater than about 80° C. with a solution containing at least one phosphoric acid compound selected from the group consisting of 0.1 mol/l or more phosphoric acid, 0.05 mol/l or more pyrophosphoric acid, 0.1 mol/l or more phosphorous acid, 0.1 mol/l or more of a mixture of phosphoric, pyrophosphoric and/or phosphorous acids, molten phosphoric acid, molten pyrophosphoric acid, molten phosphorous acid and a molten mixture of phosphoric, pyrophosphoric and/or phosphorous acids.
Claim 3
Dependent Claim
19 words
The process of claim 1, wherein said etching is conducted at a temperature of about 90° to 95° C.
Claim 4
Dependent Claim
37 words
The process of claim 1, wherein said etching solution contains molten phosphorous acid, molten phosphoric acid, or molten pyrophosphoric acid and etching is conducted at a temperature from the melting point of the acid to 95° C.
Claim 5
Dependent Claim
29 words
The process of claim 1, wherein said tin-nickel alloy is provided on the surface of a copper foil and said process comprises dipping said laminate in said etching solution.
Claim 6
Dependent Claim
11 words
The process of claim 4, wherein a printed circuit is formed.
Claim 7
Dependent Claim
52 words
In a process for preparing a printed circuit board from a laminate comprising an insulative support, a tin-nickel alloy resistor layer provided on said support and a copper conductor pattern provided on the surface of said tin-nickel alloy, the improvement which comprises etching said tin-nickel alloy by the process of claim 1.
Claim 8
Dependent Claim
19 words
The process of claim 6, wherein said etching is conducted at a temperature of about 90° and 95° C.
Claim 9
Dependent Claim
37 words
The process of claim 6, wherein said etching solution contains molten phosphorous acid, molten phosphoric acid, or molten pyrophosphoric acid and etching is conducted at a temperature from the melting point of the acid to 95° C.
Claim 10
Dependent Claim
14 words
The process of claim 6, wherein said laminate is dipped in said etching solution.
Claim 11
Dependent Claim
93 words
A process for etching a tin-nickel alloy which comprises etching the alloy at a temperature of greater than about 70° C. with a solution containing (a) at least one phosphoric acid compound selected from the group consisting of 0.1 mol/l or more phosphoric acid, 0.05 mol/l or more pyrophosphoric acid, 0.1 mol/l or more phosphorous acid, 0.1 mol/l or more of a mixture of phosphoric, pyrophosphoric and/or phosphorous acids, molten phosphoric acid, molten pyrophosphoric acid, molten phosphorous acid and a molten mixture of phosphoric, pyrophosphoric and/or phosphorous acids, and (b) an oxidizing agent.
Claim 12
Dependent Claim
93 words
A process for etching a tin-nickel alloy which comprises etching the alloy at a temperature of greater than about 70° C. with a solution containing (a) at least one phosphoric acid compound selected from the group consisting of 0.1 mol/l or more phosphoric acid, 0.05 mol/l or more pyrophosphoric acid, 0.1 mol/l or more phosphorous acid, 0.1 mol/l or more of a mixture of phosphoric, pyrophosphoric and/or phosphorous acids, molten phosphoric acid, molten pyrophosphoric acid, molten phosphorous acid and a molten mixture of phosphoric, pyrophosphoric and/or phosphorous acids, and (b) an oxidizing agent.
Claim 13
Dependent Claim
29 words
The process of claim 10, wherein said tin-nickel alloy is provided on the surface of a copper foil and said process comprises dipping said laminate in said etching solution.
Claim 14
Dependent Claim
11 words
The process of claim 11, wherein a printed circuit is formed.
Claim 15
Dependent Claim
22 words
The process of claim 10, wherein said oxidizing agent has standard oxidation-reduction potential (E o ) of about +0.344 V or more.
Claim 16
Dependent Claim
57 words
The process of claim 13, wherein said oxidizing agent is one or more compound selected from the group consisting of nitric acid, a nitric acid salt, a copper salt, an iron salt, a bromate, a peroxide, a metal oxide, a chromic acid compound, a permanganic acid salt, a halogen, an ozone, a nitrobenzene and an iodoso compound.
Claim 17
Dependent Claim
13 words
The process of claim 14, wherein said oxidizing agent comprises copper (II) phosphate.
Claim 18
Dependent Claim
30 words
The process of claim 15, wherein said etching solution contains phosphoric acid and said copper (II) phosphate is present in an amount of about 1×10 -3 to 6×10 -3 mol/l.
Claim 19
Dependent Claim
30 words
The process of claim 15, wherein said etching solution contains pyrophosphoric acid and said copper (II) phosphate is present in an amount of about 1×10 -3 to 6×10 -3 mol/l.
Claim 20
Dependent Claim
30 words
The process of claim 15, wherein said etching solution contains phosphorous acid and said copper (II) phosphate is present in an amount of about 1×10 -3 to 1.9×10 -2 mol/l.
Claim 21
Dependent Claim
21 words
The process of claim 10, wherein said oxidizing agent is present in an amount of about 5×10 -4 to 0.1 mol/l.
Claim 22
Dependent Claim
22 words
The process of claim 19, wherein said oxidizing agent is present in an amount of about 1×10 -3 to 5×10 -2 mol/l.
Claim 23
Dependent Claim
18 words
The process of claim 10, wherein etching is conducted at a temperature of about 75° to 95° C.
Claim 24
Dependent Claim
52 words
In a process for preparing a printed circuit board from a laminate comprising an insulative support, a tin-nickel alloy resistor layer provided on said support and a copper conductor pattern provided on the surface of said tin-nickel alloy, the improvement which comprises etching said tin-nickel alloy by the process of claim 10.
Claim 25
Dependent Claim
14 words
The process of claim 22, wherein said laminate is dipped in said etching solution.
Claim 26
Dependent Claim
23 words
The process of claim 22, wherein said oxidizing agent has a standard oxidation-reduction potential (E o ) of about +0.344 V or more.
Claim 27
Dependent Claim
57 words
The process of claim 24, wherein said oxidizing agent is one or more compound selected from the group consisting of nitric acid, a nitric acid salt, a copper salt, an iron salt, a bromate, a peroxide, a metal oxide, a chromic acid compound, a permanganic acid salt, a halogen, an ozone, a nitrobenzene and an iodoso compound.
Claim 28
Dependent Claim
13 words
The process of claim 25, wherein said oxidizing agent comprises copper (II) phosphate.
Claim 29
Dependent Claim
30 words
The process of claim 26, wherein said etching solution contains phosphoric acid and said copper (II) phosphate is present in an amount of about 1×10 -3 to 6×10 -3 mol/l.
Claim 30
Dependent Claim
30 words
The process of claim 26, wherein said etching solution contains pyrophosphoric acid and said copper (II) phosphate is present in an amount of about 1×10 -3 to 6×10 -3 mol/l.
Claim 31
Dependent Claim
30 words
The process of claim 26, wherein said etching solution contains phosphorous acid and said copper (II) phosphate is present in an amount of about 1×10 -3 to 1.9×10 -2 mol/l.
Claim 32
Dependent Claim
21 words
The process of claim 22, wherein said oxidizing agent is present in an amount of about 5×10 -4 to 0.1 mol/l.
Claim 33
Dependent Claim
22 words
The process of claim 30, wherein said oxidizing agent is present in an amount of about 1×10 -3 to 5×10 -2 mol/l.
Claim 34
Dependent Claim
18 words
The process of claim 22, wherein etching is conducted at a temperature of about 75° to 95° C.
Claim 35
Dependent Claim
95 words
A process for etching a tin-nickel alloy which comprises etching the alloy with a solution containing (a) at least one of a phosphoric acid compound selected from the group consisting of 0.1 mol/l or more phosphoric acid, 0.05 mol/l or more pyrophosphoric acid, 0.1 mol/l or more phosphorous acid, 0.1 mol/l or more of a mixture of phosphoric, pyrophosphoric and/or phosphorous acids, molten phosphoric acid, molten pyrophosphoric acid, molten phosphorous acid and a molten mixture of phosphoric, pyrophosphoric and/or phosphorous acids, (b) an oxidizing agent and (c) hydrochloric acid, sulfuric acid or a mixture thereof.
Claim 36
Dependent Claim
95 words
A process for etching a tin-nickel alloy which comprises etching the alloy with a solution containing (a) at least one of a phosphoric acid compound selected from the group consisting of 0.1 mol/l or more phosphoric acid, 0.05 mol/l or more pyrophosphoric acid, 0.1 mol/l or more phosphorous acid, 0.1 mol/l or more of a mixture of phosphoric, pyrophosphoric and/or phosphorous acids, molten phosphoric acid, molten pyrophosphoric acid, molten phosphorous acid and a molten mixture of phosphoric, pyrophosphoric and/or phosphorous acids, (b) an oxidizing agent and (c) hydrochloric acid, sulfuric acid or a mixture thereof.
Claim 37
Dependent Claim
29 words
The process of claim 33, wherein said tin-nickel alloy is provided on the surface of a copper foil and said process comprises dipping said laminate in said etching solution.
Claim 38
Dependent Claim
11 words
The process of claim 34, wherein a printed circuit is formed.
Claim 39
Dependent Claim
52 words
The process of claim 33, wherein said hydrochloric acid is used in an amount of about 5×10 -3 to 2.5 mol/l, said sulfuric acid is in an amount of about 5×10 -3 to 5 mol/l and said mixture of acid is used in an amount of about 5×10 -3 to 3 mol/l.
Claim 40
Dependent Claim
18 words
The process of claim 33, wherein etching is conducted at a temperature of at least about 65° C.
Claim 41
Dependent Claim
14 words
The process of claim 33, wherein etching is carried out at a room temperature.
Claim 42
Dependent Claim
13 words
The process of claim 38, wherein said oxidizing agent is copper (II) phosphate.
Claim 43
Dependent Claim
52 words
In a process for preparing a printed circuit board from a laminate comprising an insulative support, a tin-nickel alloy resistor layer provided on said support and a copper conductor pattern provided on the surface of said tin-nickel alloy, the improvement which comprises etching said tin-nickel alloy by the process of claim 33.
Claim 44
Dependent Claim
14 words
The process of claim 40, wherein said laminate is dipped in said etching solution.
Claim 45
Dependent Claim
53 words
The process of claim 40, wherein said hydrochloric acid is used in an amount of about 5×10 -3 to 2.5 mol/l, said sulfuric acid is used in an amount of about 5×10 -3 to 5 mol/l and said mixture of acid is used in an amount of about 5×10 -3 to 3 mol/l.
Claim 46
Dependent Claim
18 words
The process of claim 40, wherein etching is conducted at a temperature of at least about 65° C.
Claim 47
Dependent Claim
14 words
The process of claim 40, wherein etching is carried out at a room temperature.
Claim 48
Dependent Claim
13 words
The process of claim 44, wherein said oxidizing agent is copper (II) phosphate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-10 | 1985-02-09 | 1985-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-10 | 1989-02-09 | 1989-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-10 | 1993-02-09 | 1993-08-11 | $7700.00 | Window Closed / Lapsed |