Abstract An interference-potential-compensated thyristor comprising, a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base of said one conductivity type in contact with said common main base, first and second outer emitter zones of said opposite conductivity type in contact with said common control base, a common metallized electrode layer in contact with said common emitter zone, a first opposite metallized electrode layer in contact with a portion of said common control base and said first outer emitter zone at a junction between said common control base and said first outer emitter zone, and a second opposite metallized electrode layer in contact with a portion of said common control base and said second outer emitter zone at a junction between said common control base and said second outer emitter zone, said first outer emitter zone defining a pilot thyristor part thereabout and said second outer emitter zone defining a sequential thyristor thereabout, a geometry of said first and second outer emitter zones and said first and second opposite metallized electrode layers being chosen so that a capacitance resulting from a forward blocking p-n junction and the surface resistance of said common control base result in a potential which compensates and which approximately corresponds to a maximum interference potential occurring in said common control base beneath said first outer emitter zone, and with an optical or electrical triggering, a potential develops in said common control base adjacent said portion of said first outer emitter zone in contact with said first opposite metallized electrode layer which is substantially lower than the maximum turn-on potential produced in the common control base beneath said first outer emitter zone.
An interference potential compensated thyristor comprising: a semi-conductor body having; a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base zone of said one conductivity type in contact with said common main base zone defining one surface of said semiconductor body, at least first and second outer emitter zones of said opposite conductivity type in contact with said common control base, said outer emitter zones formed at said one surface of said semiconductor body with said common control base zone extending to said one surface between and around said outer emitter zones; a common metallized electrode layer in ohmic contact with said common emitter zone, a first opposite metallized electrode layer in ohmic contact with an edge portion of said first outer emitter zone and a portion of said common control base zone at said semi-conductor body surface and over a junction between said common control base zone and said first outer emitter zone to ohmically connect said edge portion of said outer emitter zone and said common control base zone, a second opposite metallized electrode layer in contact with said second outer emitter zone, said first outer emitter zone forming part of a pilot thyristor part and said second outer emitter zone forming a part of a sequential thyristor part; wherein a substantially maximum value for the interference potential in said common control base zone adjacent said first outer emitter zone is applied to said edge portion of said first outer emitter zone in contact with said first opposite metallized electrode layer; only said edge portion of said first outer emitter zone being ohmically connected to said common control base zone; the size of said portion of said common control base zone in contact with said first opposite metallized electrode layer being dimensioned so that a resistance between said first opposite metallized electrode layer and said sequential thyristor part being smaller than a resistance between said pilot thyristor part and said sequential thyristor part opposing a flow of triggering control current between said pilot thyristor part and sequential thyristor part.
Claim 2
Dependent Claim
360 words
An interference potential compensated thyristor comprising: a semi-conductor body having; a common emitter zone of one conductivity type, a common main base zone of an opposite conductivity type in contact with said common emitter zone, a common control base zone of said one conductivity type in contact with said common main base zone defining one surface of said semiconductor body, at least first and second outer emitter zones of said opposite conductivity type in contact with said common control base, said outer emitter zones formed at said one surface of said semiconductor body with said common control base zone extending to said one surface between and around said outer emitter zones; a common metallized electrode layer in ohmic contact with said common emitter zone, a first opposite metallized electrode layer in ohmic contact with an edge portion of said first outer emitter zone and a portion of said common control base zone at said semi-conductor body surface and over a junction between said common control base zone and said first outer emitter zone to ohmically connect said edge portion of said outer emitter zone and said common control base zone, a second opposite metallized electrode layer in contact with said second outer emitter zone, said first outer emitter zone forming part of a pilot thyristor part and said second outer emitter zone forming a part of a sequential thyristor part; wherein a substantially maximum value for the interference potential in said common control base zone adjacent said first outer emitter zone is applied to said edge portion of said first outer emitter zone in contact with said first opposite metallized electrode layer; only said edge portion of said first outer emitter zone being ohmically connected to said common control base zone; the size of said portion of said common control base zone in contact with said first opposite metallized electrode layer being dimensioned so that a resistance between said first opposite metallized electrode layer and said sequential thyristor part being smaller than a resistance between said pilot thyristor part and said sequential thyristor part opposing a flow of triggering control current between said pilot thyristor part and sequential thyristor part.
Claim 3
Dependent Claim
64 words
A thyristor according to claim 1, wherein said edge portion of said first outer emitter zone in contact with said first opposite electrode layer is small with respect to said portion of said common control base in contact with said first opposite electrode layer, said first opposite electrode layer being asymmetrically connected to said first outer emitter zone and said common control base zone.
Claim 4
Dependent Claim
139 words
A thyristor according to claim 2, wherein the product C" ir ×R" 1 is chosen to be approximately equal to the product C iz ×R' 2 wherein C" ir equals a capacitance of a PN junction between said control base zone and said main base zone under said first opposite electrode layer; R" 1 is the resistance in said control base zone between said sequential thyristor and said portion of said control base zone under said first opposite electrode layer; C iz is the capacitance of a PN junction between said control base zone and said main base zone under said first outer emitter zone; and R' 2 is the resistance in said control base zone between said pilot thyristor and said sequential thyristor on a side of said first outer emitter zone opposite said first opposite electrode layer.