US4282043A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for reducing the interdiffusion of conductors and/or semiconductors in contact with each other
Assignee: International Business Machines Corp
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Filing: 1980-02-25
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Granted: 1981-08-04
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Expires: 2000-02-25
Abstract
Abstract The interdiffusion at the interface between a metallic-type conductor or semiconductor and a second metallic-type conductor or semiconductor in intimate contact therewith due to elevated temperatures is reduced by subjecting a surface of at least one of the materials when at an elevated temperature to a gas which contains at least one component which changes the surface potential and work function of the surface which is subjected to the gas in a direction according to the relative electronegativities of the materials.
Inventors
- 👤 Chin-An Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:50
CPC Classifications
H; H10; H10P; H10P95/00; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12771; Y10T428/12861; Y10T428/12889
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
157 words
A method for reducing the interdiffusion when at elevated temperature of a first material and a second material which is adjacent to and in intimate contact with the first material, wherein the electronegativity of the first material is different from the electronegativity of the second material, and wherein each of the first material and the second material is a metallic-type electrical conductive material or a semiconductive material or a mixture thereof which method comprises when at elevated temperature of at least about 100° C. exposing at least one surface of said first material containing CO or O 2 or both, provided that the gas increases the work function of the first material when it is more electronegative than the second material or decreases the work function of the first material when it is less electronegative than the second material, and thereby reducing the interdiffusion of the first and second materials at their interface and at elevated temperature.
Claim 2
Independent Claim
157 words
A method for reducing the interdiffusion when at elevated temperature of a first material and a second material which is adjacent to and in intimate contact with the first material, wherein the electronegativity of the first material is different from the electronegativity of the second material, and wherein each of the first material and the second material is a metallic-type electrical conductive material or a semiconductive material or a mixture thereof which method comprises when at elevated temperature of at least about 100° C. exposing at least one surface of said first material containing CO or O 2 or both, provided that the gas increases the work function of the first material when it is more electronegative than the second material or decreases the work function of the first material when it is less electronegative than the second material, and thereby reducing the interdiffusion of the first and second materials at their interface and at elevated temperature.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the first material is located on top of the second material.
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein said first material is a layer comprising a metallic-type electrical conductive material.
Claim 5
Dependent Claim
20 words
The method of claim 2 wherein the first and second materials are layers about 100 to about 5000 A thick.
Claim 6
Dependent Claim
20 words
The method of claim 2 wherein the first and second materials are layers about 500 to about 3000 A thick.
Claim 7
Dependent Claim
14 words
The method of claim 3 wherein said metallic-type electrical conductive material is polycrystalline gold.
Claim 8
Dependent Claim
27 words
The method of claim 6 wherein said second material is a layer of a material selected from the group of chromium, cobalt, copper, silicon, and mixtures thereof.
Claim 9
Dependent Claim
27 words
The method of claim 1 wherein said second material is a layer of a material selected from the group of chromium, cobalt, copper, silicon, and mixtures thereof.
Claim 10
Dependent Claim
17 words
The method of claim 2 wherein the second material is located on top of a semiconductive substrate.
Claim 11
Dependent Claim
11 words
The method of claim 9 wherein said substrate is gallium arsenide.
Claim 12
Dependent Claim
15 words
The method of claim 1 wherein said elevated temperature is at least about 100° C.
Claim 13
Dependent Claim
15 words
The method of claim 1 wherein said elevated temperature is up to about 500° C.
Claim 14
Dependent Claim
16 words
The method of claim 1 wherein said elevated temperature is about 200° to about 350° C.
Claim 15
Dependent Claim
16 words
The method of claim 7 wherein said gas is a mixture of carbon monoxide and air.
Claim 16
Dependent Claim
22 words
The method of claim 6 wherein said gas is a mixture of carbon monoxide and air in a ratio of about 1:1.
Claim 17
Dependent Claim
15 words
The method of claim 6 wherein said second material is less electronegative than said gold.
Claim 18
Dependent Claim
11 words
The method of claim 7 wherein said substrate is gallium arsenide.
Claim 19
Dependent Claim
13 words
The method of claim 3 wherein said metallic-type electrical conductive material is platinum.
Claim 20
Dependent Claim
15 words
The method of claim 18 wherein said second material is less electronegative than said platinum.
Claim 21
Dependent Claim
12 words
The method of claim 19 wherein the gas contains O 2 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-03 | 1985-02-02 | 1985-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-03 | 1989-02-02 | 1989-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-03 | 1993-02-02 | 1993-08-04 | $7700.00 | Window Closed / Lapsed |