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US4280131A
Expired / Lapsed
US
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Pleochroic light emitting diode and method of fabricating the same
Assignee: Hitachi Ltd
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Filing: 1979-03-07
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Granted: 1981-07-21
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Expires: 1999-03-07
Abstract
Abstract A planar-type pleochroic light emitting diode and a method of fabricating the same are disclosed, the diode allowing from a single chip a plurality of light emissions having different center wavelengths. Impurity diffusion is carried out by use of a film having a masking effect to an impurity and a different film partially non-uniform in thickness having no masking effect to the impurity to form a plurality of diffusion regions having different depths. The diode has excellent coupling with an optical fiber, can be easily fabricated and is suitable for use in optical multiplex communication.
Inventors
- 👤 Yuichi Ono
- 👤 Kazuhiro Ito
- 👤 Mitsuhiro Mori
- 👤 Masaaki Aoki
- 👤 Kazuhiro Kurata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:38
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H10H29/00; H10H29/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
97 words
A pleochroic light emitting diode comprising: a mixed crystal compound semiconductor layer of a first conductivity type whose mixing ratio is continuously varied in the direction of thickness from a planar surface of said layer; and a plurality of regions of a second conductivity type formed in said planar surface of said compound semiconductor layer with different depths respectively relative to said planar surface to form p-n junctions with said compound semiconductor layers, whereby plural light emissions with different center wavelengths generated at said p-n junctions are derived from said planar surface of said compound semiconductor layer.
Claim 2
Dependent Claim
97 words
A pleochroic light emitting diode comprising: a mixed crystal compound semiconductor layer of a first conductivity type whose mixing ratio is continuously varied in the direction of thickness from a planar surface of said layer; and a plurality of regions of a second conductivity type formed in said planar surface of said compound semiconductor layer with different depths respectively relative to said planar surface to form p-n junctions with said compound semiconductor layers, whereby plural light emissions with different center wavelengths generated at said p-n junctions are derived from said planar surface of said compound semiconductor layer.
Claim 3
Dependent Claim
25 words
A pleochroic light emitting diode according to claim 1, wherein said first conductivity type is an n-type and said second conductivity type is a p-type.
Claim 4
Dependent Claim
32 words
A pleochroic light emitting diode according to claim 1, wherein said compound semiconductor is one selected from a group consisting of Ga 1-x Al x As and GaAs 1-x P x .
Claim 5
Dependent Claim
117 words
A pleochroic light emitting diode for generating light signals for transmission through an optical fiber comprising: a mixed crystal compound semiconductor layer of a first conductivity type whose mixing ratio is continuously varied in the direction of thickness from a planar surface of said layer; and a plurality of regions of a second conductivity type formed in said planar surface of said compound semiconductor layer with different depths respectively relative to said planar surface to form p-n junctions with said compound semiconductor layers, whereby plural light emissions with different center wavelengths generated at said p-n junctions are derived from said planar surface of said compound semiconductor layer for coupling said plural light emissions to said optical fiber.
Claim 6
Dependent Claim
117 words
A pleochroic light emitting diode for generating light signals for transmission through an optical fiber comprising: a mixed crystal compound semiconductor layer of a first conductivity type whose mixing ratio is continuously varied in the direction of thickness from a planar surface of said layer; and a plurality of regions of a second conductivity type formed in said planar surface of said compound semiconductor layer with different depths respectively relative to said planar surface to form p-n junctions with said compound semiconductor layers, whereby plural light emissions with different center wavelengths generated at said p-n junctions are derived from said planar surface of said compound semiconductor layer for coupling said plural light emissions to said optical fiber.
Claim 7
Dependent Claim
18 words
A pleochroic light emitting diode according to claim 4, wherein the light emissions are in the infrared region.
Claim 8
Dependent Claim
23 words
A pleochroic light emitting diode according to claim 4, wherein the light emissions are in a range from 7300 A to 8600 A.
Claim 9
Dependent Claim
53 words
A pleochroic light emitting diode according to either claim 1 or 4, further comprising first electrode means located on said planar surface of said mixed crystal compound semiconductor layer and second electrode means coupled to a substrate located along a surface of the mixed crystal compound semiconductor layer opposite to said planar surface.
References Cited (Backward Citations)
US4148045A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-20 | 1985-01-19 | 1985-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-20 | 1989-01-19 | 1989-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-20 | 1993-01-19 | 1993-07-21 | $7700.00 | Window Closed / Lapsed |