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US4279690A Expired / Lapsed US ⏱️ 0.0 years remaining

High-radiance emitters with integral microlens

Assignee: Texas Instruments Inc
•
Filing: 1977-09-19
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Granted: 1981-07-21
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Expires: 1997-09-19
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Abstract

Abstract This invention deals with the fabrication of radiation emitting diodes having a small diameter shaped integral microlens formed by etching. Initially an oxide layer is deposited on the backside of the processed slice; then a ring pattern is opened in the oxide. An etch is used to form a ring groove with a mesa in the center. The center oxide dot over the mesa is removed and the etching continued to round off the edges of the mesa and to form a smooth shaped structure. Various shapes and diameters may be achieved with different ring dimensions and with different etch times.

Inventors

  • 👤 Eugene G. Dierschke

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 06:29
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/01; H10H20/011; H10H20/018; H10H20/84; H10H20/841

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 73 words
A process for making a radiation emitting semiconductor device comprising the steps of depositing an oxide on one side of an emitting device structure having an emitting junction, selectively removing an annular region of the oxide, selectively etching the exposed annular portion of the device structure to form a mesa type structure, selectively removing the oxide over the mesa structure and then selectively etching further to round the top of the mesa structure.
Claim 2
Dependent Claim 73 words
A process for making a radiation emitting semiconductor device comprising the steps of depositing an oxide on one side of an emitting device structure having an emitting junction, selectively removing an annular region of the oxide, selectively etching the exposed annular portion of the device structure to form a mesa type structure, selectively removing the oxide over the mesa structure and then selectively etching further to round the top of the mesa structure.
Claim 3
Dependent Claim 16 words
The process according to claim 1 wherein the mesa structure is formed over the emitting junction.
Claim 4
Dependent Claim 14 words
The process according to claim 1 wherein the rounded mesa structure forms a lens.
Claim 5
Dependent Claim 17 words
The process according to claim 1 wherein a reflective material is deposited around the rounded mesa structure.

References Cited (Backward Citations)

US3443140A Cited
US3512027A Cited
US3703670A Cited
US3767493A Cited
US3877052A Cited
US3954534A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-07-20 1985-01-19 1985-07-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-07-20 1989-01-19 1989-07-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-07-20 1993-01-19 1993-07-21 $7700.00 Window Closed / Lapsed

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