US4274907A — Method of chemically polishing a doubly rotated q…

Claim 1

Independent Claim 136 words

Method of chemically polishing at least one side of a doubly rotated quartz plate whose theta (θ) angle is between about 33° and 36° and whose phi (φ) angle is between about 10° and 26°, comprising lapping the quartz plate with an abrasive and etching the lapped quartz plate in a fluoride type etchant selected from the group consisting of about a 5 percent to 25 percent solution of hydrofluoric acid (HF), about a 5 percent to 50 percent solution of ammonium bifluoride (NH 4 F.HF), and a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio ranging from about 1:3 to 10:1, said etching being carried out until a thickness is removed from the plate that is at least twice the average abrasive particle diameter in the final lapping abrasive.

Claim 2

Dependent Claim 136 words

Method of chemically polishing at least one side of a doubly rotated quartz plate whose theta (θ) angle is between about 33° and 36° and whose phi (φ) angle is between about 10° and 26°, comprising lapping the quartz plate with an abrasive and etching the lapped quartz plate in a fluoride type etchant selected from the group consisting of about a 5 percent to 25 percent solution of hydrofluoric acid (HF), about a 5 percent to 50 percent solution of ammonium bifluoride (NH 4 F.HF), and a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio ranging from about 1:3 to 10:1, said etching being carried out until a thickness is removed from the plate that is at least twice the average abrasive particle diameter in the final lapping abrasive.

Claim 3

Dependent Claim 156 words

Method of chemically polishing both sides of a doubly rotated quartz plate whose theta (θ) angle is between about 33° and 36° and whose phi (φ) angle is between about 10° and 26° comprising lapping the quartz plate with an abrasive and etching the lapped quartz plate in a fluoride type etchant selected from the group consisting of about a 5 percent to 11 percent solution of hydrofluoric acid (HF), about a 5 percent to 25 percent solution of ammonium bifluoride (NH 4 F.HF), and a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratios ranging from about 4:1 to 10:1 for phi angles ranging from 18° to 26° and from about 3:1 to 10:1 for phi angles ranging from 10° to 18°, said etching being carried out until a thickness is removed from the plate that is at least twice the average abrasive particle diameter in the final lapping abrasive.

Claim 4

Dependent Claim 156 words

Method of chemically polishing both sides of a doubly rotated quartz plate whose theta (θ) angle is between about 33° and 36° and whose phi (φ) angle is between about 10° and 26° comprising lapping the quartz plate with an abrasive and etching the lapped quartz plate in a fluoride type etchant selected from the group consisting of about a 5 percent to 11 percent solution of hydrofluoric acid (HF), about a 5 percent to 25 percent solution of ammonium bifluoride (NH 4 F.HF), and a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratios ranging from about 4:1 to 10:1 for phi angles ranging from 18° to 26° and from about 3:1 to 10:1 for phi angles ranging from 10° to 18°, said etching being carried out until a thickness is removed from the plate that is at least twice the average abrasive particle diameter in the final lapping abrasive.

Claim 5

Dependent Claim 20 words

Method according to claim 1 or claim 2 wherein the doubly rotated quartz plate to be chemically polished is SC-cut.

Claim 6

Dependent Claim 20 words

Method according to claim 1 or claim 2 wherein the doubly rotated quartz plate to be chemically polished is FC-cut.

Claim 7

Dependent Claim 20 words

Method according to claim 1 or claim 2 wherein the doubly rotated quartz plate to be chemically polished is IT-cut.

Claim 8

Dependent Claim 22 words

Method according to claim 1 wherein the fluoride type etchant is about a 5 percent to 25 percent solution of hydrofluoric acid.

Claim 9

Dependent Claim 22 words

Method according to claim 2 wherein the fluoride type etchant is about a 5 percent to 11 percent solution of hydrofluoric acid.

Claim 10

Dependent Claim 22 words

Method according to claim 1 wherein the fluoride type etchant is about a 5 percent to 50 percent solution of ammonium bifluoride.

Claim 11

Dependent Claim 22 words

Method according to claim 2 wherein the fluoride type etchant is about a 5 percent to 25 percent solution of ammonium bifluoride.

Claim 12

Dependent Claim 32 words

Method according to claim 1 wherein the fluoride type etchant is a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio ranging from about 1:3 to 10:1.

Claim 13

Dependent Claim 54 words

Method according to claim 2 wherein the fluoride type etchant is a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratios ranging from about 4:1 to 10:1 for phi angles ranging from 18° to 26° and from about 3:1 to 10:1 for phi angles ranging from 10° to 18°.

Claim 14

Dependent Claim 27 words

Method according to claim 1 or claim 2 wherein the abrasive is selected from the group consisting of aluminum oxide, silicon carbide, cerium oxide, and zirconium oxide.

Claim 15

Dependent Claim 11 words

Method according to claim 12 wherein the abrasive is aluminum oxide.

Claim 16

Dependent Claim 11 words

Method according to claim 12 wherein the abrasive is silicon carbide.

Claim 17

Dependent Claim 16 words

Method according to claim 1 or claim 2 wherein the quartz plate is agitated during etching.

Claim 18

Dependent Claim 28 words

Method according to claim 1 or claim 2 wherein the quartz plate is cleaned prior to etching until all contaminants which are impervious to the etchant are removed.

Claim 19

Dependent Claim 24 words

Method according to claim 1 or claim 2 wherein the quartz plate is thoroughly rinsed after etching to remove all residues of the etchant.

Claim 20

Dependent Claim 62 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 3 μm aluminum oxide abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 4:1 at an etching bath temperature of about 75° for about 2 hours.

Claim 21

Dependent Claim 62 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 3 μm aluminum oxide abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 4:1 at an etching bath temperature of about 75° for about 2 hours.

Claim 22

Dependent Claim 13 words

Method according to claim 18 wherein the quartz plate is agitated during etching.

Claim 23

Dependent Claim 25 words

Method according to claim 18 wherein the quartz plate is cleaned prior to etching until all contaminants which are impervious to the etchant are removed.

Claim 24

Dependent Claim 21 words

Method according to claim 18 wherein the quartz plate is thoroughly cleaned after etching to remove all residues of the etchant.

Claim 25

Dependent Claim 61 words

Method of chemically polishing one side of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 1:1 at an etching bath temperature of about 75° C. for about 20 minutes.

Claim 26

Dependent Claim 61 words

Method of chemically polishing one side of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 1:1 at an etching bath temperature of about 75° C. for about 20 minutes.

Claim 27

Dependent Claim 13 words

Method according to claim 22 wherein the quartz plate is agitated during etching.

Claim 28

Dependent Claim 25 words

Method according to claim 22 wherein the quartz plate is cleaned prior to etching until all contaminants which are impervious to the etchant are removed.

Claim 29

Dependent Claim 21 words

Method according to claim 22 wherein the quartz plate is thoroughly rinsed after etching to remove all residues of the etchant.

Claim 30

Dependent Claim 61 words

Method of chemically polishing one side of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 2:1 at an etching bath temperature of about 75° C. for about 30 minutes.

Claim 31

Dependent Claim 61 words

Method of chemically polishing one side of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 2:1 at an etching bath temperature of about 75° C. for about 30 minutes.

Claim 32

Dependent Claim 13 words

Method according to claim 26 wherein the quartz plate is agitated during etching.

Claim 33

Dependent Claim 21 words

Method according to claim 26 wherein the quartz plate is cleaned prior to etching to remove all residues of the etchant.

Claim 34

Dependent Claim 21 words

Method according to claim 26 wherein the quartz plate is thoroughly rinsed after etching to remove all residues of the etchant.

Claim 35

Dependent Claim 69 words

Method of chemically polishing both sides of a doubly rotated FC-cut quartz plate comprising lapping the quartz plate with a 1 μm aluminum oxide abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 3:1 at an etching bath temperature of about 75° C. until about 20 μm is removed from the plate thickness.

Claim 36

Dependent Claim 69 words

Method of chemically polishing both sides of a doubly rotated FC-cut quartz plate comprising lapping the quartz plate with a 1 μm aluminum oxide abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 3:1 at an etching bath temperature of about 75° C. until about 20 μm is removed from the plate thickness.

Claim 37

Dependent Claim 13 words

Method according to claim 30 wherein the quartz plate is agitated during etching.

Claim 38

Dependent Claim 21 words

Method according to claim 30 wherein the quartz plate is cleaned prior to etching to remove all residues of the etchant.

Claim 39

Dependent Claim 21 words

Method according to claim 30 wherein the quartz plate is thoroughly rinsed after etching to remove all residues of the etchant.

Claim 40

Dependent Claim 63 words

Method of chemically polishing one side of a doubly rotated IT-cut quartz plate comprising lapping the quartz plate with a 3 μm aluminum oxide abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 3:1 at an etching bath temperature of about 75° C. for about 75 minutes.

Claim 41

Dependent Claim 63 words

Method of chemically polishing one side of a doubly rotated IT-cut quartz plate comprising lapping the quartz plate with a 3 μm aluminum oxide abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 3:1 at an etching bath temperature of about 75° C. for about 75 minutes.

Claim 42

Dependent Claim 13 words

Method according to claim 34 wherein the quartz plate is agitated during etching.

Claim 43

Dependent Claim 21 words

Method according to claim 34 wherein the quartz plate is cleaned prior to etching to remove all residues of the etchant.

Claim 44

Dependent Claim 20 words

Method according to claim 34 wherein the quartz plate is thoroughly rinsed after etching to remove all residues of etchant.

Claim 45

Dependent Claim 61 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 4:1 at an etching bath temperature of about 75° C. for about 2 hours.

Claim 46

Dependent Claim 61 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 4:1 at an etching bath temperature of about 75° C. for about 2 hours.

Claim 47

Dependent Claim 13 words

Method according to claim 38 wherein the quartz plate is agitated during etching.

Claim 48

Dependent Claim 21 words

Method according to claim 38 wherein the quartz plate is cleaned prior to etching to remove all residues of the etchant.

Claim 49

Dependent Claim 20 words

Method according to claim 38 wherein the quartz plate is thoroughly rinsed after etching to remove all residues of etchant.

Claim 50

Dependent Claim 67 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with an 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 5:1 at an etching bath temperature of about 80° C. until about 25 μm is removed from the plate thickness.

Claim 51

Dependent Claim 67 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with an 1 μm abrasive and then etching the lapped plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 5:1 at an etching bath temperature of about 80° C. until about 25 μm is removed from the plate thickness.

Claim 52

Dependent Claim 13 words

Method according to claim 42 wherein the quartz plate is agitated during etching.

Claim 53

Dependent Claim 20 words

Method according to claim 42 wherein the quartz plate is cleaned prior to etching to remove all residues of etchant.

Claim 54

Dependent Claim 20 words

Method according to claim 42 wherein the quartz plate is thoroughly rinsed after etching to remove all residues of etchant.

Claim 55

Dependent Claim 48 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in an 11 percent HF solution at an etching bath temperature of about 75° C. for about 21/2 hours.

Claim 56

Dependent Claim 48 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in an 11 percent HF solution at an etching bath temperature of about 75° C. for about 21/2 hours.

Claim 57

Dependent Claim 65 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a dilute NH 4 F.HF solution prepared by mixing one part by weight of NH 4 F.HF flakes with five parts water at an etching bath temperature of about 75° C. for about 3 hours.

Claim 58

Dependent Claim 65 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate comprising lapping the quartz plate with a 1 μm abrasive and then etching the lapped plate in a dilute NH 4 F.HF solution prepared by mixing one part by weight of NH 4 F.HF flakes with five parts water at an etching bath temperature of about 75° C. for about 3 hours.

Claim 59

Dependent Claim 73 words

Method of chemically polishing a doubly rotated SC-cut quartz plate comprising final lapping the quartz plate with a 1 micrometer aluminum oxide abrasive, and then etching the final lapped quartz plate in a 4:1 solution to a range from Δf=10f o f f to Δf=16f o f f where Δf is the change in frequency in KH z and f o and f f are the initial and final frequencies, respectively, in MHz.

Claim 60

Dependent Claim 73 words

Method of chemically polishing a doubly rotated SC-cut quartz plate comprising final lapping the quartz plate with a 1 micrometer aluminum oxide abrasive, and then etching the final lapped quartz plate in a 4:1 solution to a range from Δf=10f o f f to Δf=16f o f f where Δf is the change in frequency in KH z and f o and f f are the initial and final frequencies, respectively, in MHz.

Claim 61

Dependent Claim 29 words

Method according to claim 1 or claim 2 wherein the quartz plate is made of a material selected from the group consisting of natural quartz and swept cultured quartz.

Claim 62

Dependent Claim 137 words

Method of chemically polishing one side of a doubly rotated SC-cut quartz plate, said method consisting of the steps of (a) final lapping the quartz plate with a 1 micron aluminum oxide abrasive, (b) thoroughly cleaning the plate, (c) etching the plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 1:3 while agitating the plate in both directions, (d) etching the plate until an amount of material is removed from the plate such that the thickness of the plate is reduced by an amount which is equal to at least twice the average particle size in the final lapping abrasive, and (e) removing the plate from the etching solution after the desired frequency is reached and thoroughly rinsing the plate to remove all residues of the etchant.

Claim 63

Dependent Claim 137 words

Method of chemically polishing one side of a doubly rotated SC-cut quartz plate, said method consisting of the steps of (a) final lapping the quartz plate with a 1 micron aluminum oxide abrasive, (b) thoroughly cleaning the plate, (c) etching the plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 1:3 while agitating the plate in both directions, (d) etching the plate until an amount of material is removed from the plate such that the thickness of the plate is reduced by an amount which is equal to at least twice the average particle size in the final lapping abrasive, and (e) removing the plate from the etching solution after the desired frequency is reached and thoroughly rinsing the plate to remove all residues of the etchant.

Claim 64

Dependent Claim 137 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate, said method consisting of the steps of (a) final lapping the quartz plate with a 1 micron aluminum oxide abrasive, (b) thoroughly cleaning the plate, (c) etching the plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 10:1 while agitating the plate in both directions, (d) etching the plate until an amount of material is removed from the plate such that the thickness of the plate is reduced by an amount which is equal to at least twice the average particle size in the final lapping abrasive, and (e) removing the plate from the etching solution after the desired frequency is reached and thoroughly rinsing the plate to remove all residues of the etchant.

Claim 65

Dependent Claim 137 words

Method of chemically polishing both sides of a doubly rotated SC-cut quartz plate, said method consisting of the steps of (a) final lapping the quartz plate with a 1 micron aluminum oxide abrasive, (b) thoroughly cleaning the plate, (c) etching the plate in a mixture of 40 percent ammonium fluoride with 49 percent hydrofluoric acid in the ratio of about 10:1 while agitating the plate in both directions, (d) etching the plate until an amount of material is removed from the plate such that the thickness of the plate is reduced by an amount which is equal to at least twice the average particle size in the final lapping abrasive, and (e) removing the plate from the etching solution after the desired frequency is reached and thoroughly rinsing the plate to remove all residues of the etchant.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1984-06-22	1984-12-22	1985-06-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1988-06-22	1988-12-22	1989-06-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1992-06-22	1992-12-22	1993-06-23	$7700.00	Window Closed / Lapsed

Method of chemically polishing a doubly rotated quartz plate

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