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US4274103A
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Avalanche photodiode with semiconductor hetero structure
Assignee: KDDI Corp
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Filing: 1979-06-21
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Granted: 1981-06-16
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Expires: 1999-06-21
Abstract
Abstract An avalanche photodiode with a semiconductor hetero structure, in which a light absorbing region and an avalanche multiplying region where avalanche gain is attained are formed of different materials. The different materials may be two compound semiconductors of different compositions. The lattice constants of the two compound semiconductors may be matched with each other.
Inventors
- 👤 Takaya Yamamoto
- 👤 Kazuo Sakai
- 👤 Shigeyuki Akiba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:12
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F30/225; H10F30/2255
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
37 words
An avalanche semiconductor photodiode having a semiconductor heterostructure and comprising: a semiconductor light absorbing region comprising In 1-x Ga x As y P 1-y , wherein 0<x≦1 and 0<y≦1; and a semiconductor avalanche multiplying region comprising InP.
Claim 2
Dependent Claim
37 words
An avalanche semiconductor photodiode having a semiconductor heterostructure and comprising: a semiconductor light absorbing region comprising In 1-x Ga x As y P 1-y , wherein 0<x≦1 and 0<y≦1; and a semiconductor avalanche multiplying region comprising InP.
Claim 3
Dependent Claim
38 words
An avalanche semiconductor photodiode according to claim 1, wherein the ratio x/y is substantially equal to 0.47/1 so that the respective lattice constants of said light absorbing region and said avalanche multiplying region are matched with each other.
Claim 4
Dependent Claim
173 words
An avalanche semiconductor photodiode comprising: a semiconductor substrate; a first semiconductor layer formed on a surface of said substrate and conducting in an avalanche mode, in operation; and a second semiconductor layer formed on a surface of said first semiconductor layer opposite said substrate, said second semiconductor layer receptive of light energy from light incident thereon in use for rendering the photodiode conductive, and said second semiconductor layer having a composition including chemical components different than the composition of said first semiconductor layer and having lattice constants substantially matched with the lattice constants of said first semiconductor layer, wherein said first and said second semiconductor layers are respectively comprised of one of the pairs of compounds selected from the group consisting of In 1-x Ga x As y P 1-x and GaAs, In 1-x Ga x Sb y P 1-y and InP, In 1-x Ga x As y P 1-y and InP, A1 1-x Ga x As y Sb 1-y and GaSb, and In 1-x Ga x As y Sb 1-y and InAs.
Claim 5
Dependent Claim
173 words
An avalanche semiconductor photodiode comprising: a semiconductor substrate; a first semiconductor layer formed on a surface of said substrate and conducting in an avalanche mode, in operation; and a second semiconductor layer formed on a surface of said first semiconductor layer opposite said substrate, said second semiconductor layer receptive of light energy from light incident thereon in use for rendering the photodiode conductive, and said second semiconductor layer having a composition including chemical components different than the composition of said first semiconductor layer and having lattice constants substantially matched with the lattice constants of said first semiconductor layer, wherein said first and said second semiconductor layers are respectively comprised of one of the pairs of compounds selected from the group consisting of In 1-x Ga x As y P 1-x and GaAs, In 1-x Ga x Sb y P 1-y and InP, In 1-x Ga x As y P 1-y and InP, A1 1-x Ga x As y Sb 1-y and GaSb, and In 1-x Ga x As y Sb 1-y and InAs.
Claim 6
Dependent Claim
21 words
An avalanche semiconductor photodiode according to claim 3, wherein the parameter x is selected to minimize the noise of the photodiode.
References Cited (Backward Citations)
US4110778A
Cited
US4212019A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-15 | 1984-12-15 | 1985-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-15 | 1988-12-15 | 1989-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-15 | 1992-12-15 | 1993-06-16 | $7700.00 | Window Closed / Lapsed |