Rinse melt for LPE crystals

Claim 2

In a liquid phase epitaxial process for growing a magnetic garnet crystal on a supporting garnet substrate from a garnet phase, primary melt, comprised of a solute and a solvent, at a growth temperature within the saturation to nucleation temperature range of said garnet phase, primary melt, an improvement therein for solvating adhered primary melt residue from the epitaxially grown magnetic garnet crystal comprising: preparing a garnet phase, rinse melt mixture having a solvent different from that used in said primary melt and a saturation to nucleation temperature range which includes said growth temperature; heating said garnet phase, rinse melt mixture to a temperature within the common range of the saturation to nucleation temperature ranges of said respective primary melt and said rinse melt mixture, thereby producing a rinse melt; and immersing said epitaxially grown magnetic garnet crystal, upon withdrawal from said primary melt and while said magnetic garnet crystal is approximately at said growth temperature, in said rinse melt until said adhered primary melt residue is solvated from said epitaxially grown magnetic garnet crystal.

Claim 3

A process as set forth in claim 1 wherein said rinse melt mixture's saturation temperatuure is greater than said growth temperature and said rinse melt is heated to said growth temperature and the duration said epitaxially grown magnetic garnet crystal is immersed in said rinse melt is extended beyond the period necessary to solvate said primary melt residue, thereby epitaxially growing a garnet decoupling layer from said rinse melt over said magnetic garnet crystal.

Claim 4

A process as set forth in claim 1 wherein said rinse melt mixture's saturation temperature is equal to said growth temperature and said rinse melt mixture is heated to said growth temperature, thereby solvating only said adhered primary melt residue during said immersion without growing a decoupling layer.

Claim 5

A process as set forth in claim 1 wherein said solvent of said primary melt contains a bismuth compound for growing a bismuth substituted magnetic garnet crystal.

Claim 6

In a liquid phase epitaxial process for growing a bismuth substituted magnetic garnet crystal on a supporting garnet substrate from a garnet phase, primary melt comprised of a solute and a solvent at a growth temperature within the saturation to nucleation temperature range of said garnet phase, primary melt, an improvement therein for solvating adhered primary melt residue from the epitaxially grown bismuth substituted magnetic garnet crystal comprising: preparing a rinse melt mixture having a garnet phase precipitate identical to said supporting garnet substrate at said growth temperature and a solvent compound different from that used in said primary melt and a saturation to nucleation temperature range which encompasses said growth temperature; heating said rinse melt mixture to said growth temperature, thereby producing a rinse melt; and immersing said epitaxially grown bismuth substituted magnetic garnet crystal, upon withdrawal from said primary melt and while said magnetic garnet crystal is approximately at said growth temperature, in said rinse melt until said adhered primary melt residue is solvated from said epitaxially grown bismuth substituted magnetic garnet crystal.

Claim 7

In a liquid phase epitaxial process for growing a bismuth substituted magnetic garnet crystal on a supporting garnet substrate from a garnet phase, primary melt comprised of a solute and a solvent at a growth temperature within the saturation to nucleation temperature range of said garnet phase, primary melt, an improvement therein for solvating adhered primary melt residue from the epitaxially grown bismuth substituted magnetic garnet crystal comprising: preparing a rinse melt mixture having a garnet phase precipitate identical to said supporting garnet substrate at said growth temperature and a solvent compound different from that used in said primary melt and a saturation to nucleation temperature range which encompasses said growth temperature; heating said rinse melt mixture to said growth temperature, thereby producing a rinse melt; and immersing said epitaxially grown bismuth substituted magnetic garnet crystal, upon withdrawal from said primary melt and while said magnetic garnet crystal is approximately at said growth temperature, in said rinse melt until said adhered primary melt residue is solvated from said epitaxially grown bismuth substituted magnetic garnet crystal.

Claim 8

A process as set forth in claim 1 wherein said rinse melt mixture consists essentially of: PbO: 78.73 Mol. % B 2 O 3 : 12.28 Mol. % Y 2 O 3 : 8.35 Mol. % Fe 2 O 3 : 0.64 Mol. %.

Claim 9

A process as set forth in claim 4 or 5 wherein said supporting garnet substrate is a gadolinium gallium garnet (Gd 3 Ga 5 O 12 ).

Claim 10

A process as set forth in claim 7 wherein said rinse melt mixture consists essentially of: Gd 2 O 3 : 1.67 Mol. % Ga 2 O 3 : 3.33 Mol. % PbO: 87.50 Mol. % B 2 O 3 : 7.50 Mol. %.

Claim 11

A process as set forth in claim 4 or 5 wherein said supporting garnet substrate is a samarium gallium garnet (SM 3 Ga 5 O 12 ).

Claim 12

A process as set forth in claim 9 wherein said rinse melt mixture consists essentially of: Sm 2 O 3 : 3.03 Mol. % Ga 2 O 3 : 3.95 Mol. % PbO: 85.68 Mol. % B 2 O 3 : 7.34 Mol. %.