Formation of heterojunction devices by epitaxial growth from solution

Claim 1

A PROCESS OF FORMING A HETEROJUNCTION DEVICE BY GROWING AN EPITAXIAL LAYER OF A FIRST SEMICONDUCTOR MATERIAL UPON A CRYSTAL OF A SECOND SEMICONDUCTOR MATERIAL COMPRISING THE STEPS OF (1) FORMING A CHARGE CONSISTING OF A FIRST SEMICONDUCTOR MATERIAL, A SECOND SEMICONDUCTOR MATERIAL AND A METAL SOLVENT, THE LATTICE CONSTANT OF THE TWO SEMICONDUCTOR MATERIALS BEING WITHIN 25% OF EACH OTHER, THE CHARGE CONSISTING OF, BY WEIGHT, FROM 1% TO 30% OF SAID SECOND SEMICONDUCTOR MATERIAL, FROM 0.1% TO 5% OF SAID FIRST SEMICONDUCTOR MATERIAL, THE AMOUNT OF SAID FIRST SEMICONDUCTOR MATERIAL IN SAID CHARGE NOT EXCEEDING ONE-HALF THE AMOUNT OF SAID SECOND SEMI-CONDUCTOR MATERIAL IN SAID CHARGE, AND THE REMAINDER BEING THE METAL SOLVENT. (2) HEATING THE CHARGE TO A FIRST TEMPERATURE WHEREBY THE FIRST AND SECOND SEMICONDUCTOR MATERIALS ARE COMPLETELY IN SOLUTION IN SAID SOLVENT. (3) COOLING SAID CHARGE AT A RATE NOT EXCEEDING 10*C. PER MINUTE TO A TEMPERATURE WHEREBY THE FIRST SEMICONDUCTOR MATERIAL DEPOSITS EPITAXIALLY ON PRECIPITATED CRYSTAL OF SAID SECOND SEMI-CONDUCTOR MATERIAL, AND (4) DISSOLVING OFF THE SOLVENT METAL, LEAVING CRYSTALS OF SAID SECOND SEMICONDUCTOR MATERIAL WITH EPITAXIAL LAYERS OF SAID FIRST SEMICONDUCTOR MATERIAL SAID CRYSTALS HAVING RECTIFYING PROPERTIES.