US4272355A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of bonding sputtering targets to target electrodes
Assignee: International Business Machines Corp
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Filing: 1980-02-26
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Granted: 1981-06-09
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Expires: 2000-02-26
Abstract
Abstract In the process of sputter deposition of targets on target electrodes, a gallium-indium eutectic alloy is employed to form a floating bond between the target material and the target electrode. Relatively high radio frequency (r.f.) power density is used to increase the deposition rate without cracking the target.
Inventors
- 👤 Thomas N. Kennedy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 08:38
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3435; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
100 words
A sputtering system for coating substrates comprising: a vacuum chamber; means for introducing a gas into said chamber; a target material for coating said substrates; a first electrode having a face for mounting said target material thereto; a second electrode for supporting said substrates positioned adjacent to and in alignment with said first electrode; means for applying voltages to said electrodes to ionize said gas, so that gas ions energetically bombard said target material; and a eutectic metal material that is liquid at ambient temperature disposed between said first electrode and said target material for forming a floating bond therebetween.
Claim 2
Dependent Claim
100 words
A sputtering system for coating substrates comprising: a vacuum chamber; means for introducing a gas into said chamber; a target material for coating said substrates; a first electrode having a face for mounting said target material thereto; a second electrode for supporting said substrates positioned adjacent to and in alignment with said first electrode; means for applying voltages to said electrodes to ionize said gas, so that gas ions energetically bombard said target material; and a eutectic metal material that is liquid at ambient temperature disposed between said first electrode and said target material for forming a floating bond therebetween.
Claim 3
Dependent Claim
14 words
A sputtering system as in claim 1 wherein said eutectic is a gallium-indium alloy.
Claim 4
Dependent Claim
14 words
A sputtering system as in claim 1, including shields disposed respectively around said electrodes.
Claim 5
Dependent Claim
19 words
A sputtering system as in claim 1 wherein said target material is aligned symmetrically relative to said target electrode.
Claim 6
Dependent Claim
33 words
A sputtering system as in claim 1, wherein said means for applying voltages is adapted to apply a voltage at the first electrode in the range of -500 volts to -2000 volts peak-to-peak.
Claim 7
Dependent Claim
13 words
A sputtering system as in claim 1, wherein said target material is ceramic.
Claim 8
Dependent Claim
23 words
A sputtering system as in claim 1, wherein said means for introducing a gas is adapted to introduce argon into said vacuum chamber.
References Cited (Backward Citations)
US3294661A
Cited
US4204936A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-08 | 1984-12-08 | 1985-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-08 | 1988-12-08 | 1989-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-08 | 1992-12-08 | 1993-06-09 | $7700.00 | Window Closed / Lapsed |