US4270189A
Expired / Lapsed
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Read only memory circuit
Assignee: International Business Machines Corp
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Filing: 1979-11-06
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Granted: 1981-05-26
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Expires: 1999-11-06
Abstract
Abstract The disclosure shows a read only storage (ROS) formed of a matrix of rows and columns of field effect transistor (FET) devices which is personalized by the presence or absence of a gate at the memory device location. All circuits on the chip are controlled and restored to initial conditions by a single train of clock pulses including the row and column addresses, the array select and the output sensing. In addition the output signal is communicated directly to the output line control device without withdrawing current to set the outputs latch thereby making the output truely delayless.
Inventors
- 👤 Michael E. Brossard
- 👤 Dale A. Heuer
- 👤 Philip T. Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:06
CPC Classifications
G; G11; G11C; G11C7/00; G11C7/10; G11C7/1051; G11C7/106; G11C17/00; G11C17/08; G11C7/06; G11C7/067; G11C8/00; G11C8/06
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
193 words
A semiconductor output sense circuit for providing a latched output signal comprising: (a) a sense node; (b) an output driver; (c) means communicating the condition at said sense node to said output driver; (d) latch means for maintaining the condition at said sense node at said output driver when said latch means is set; (e) single clock means for providing a sequence of clock pulse cycles wherein each clock pulse cycle iniates and terminates said set condition of said latch means; and (f) wherein said latching means comprises a pair of cross connected field effect transistors; a pair of load field effect transistors each operatively connected to one of said cross connected field effect transistors; said sense node connected to the source of one load field effect transistor and the gating electrode of the cross connected field effect transistor associated with the other of said load field effect transistors; and a set/reset field effect transistor with its drain connected to said sense node, its source connected to the drain of said cross connected field effect transistor associated with said one load field effect transistor and the gating electrode connected to said clock means.
Claim 2
Dependent Claim
193 words
A semiconductor output sense circuit for providing a latched output signal comprising: (a) a sense node; (b) an output driver; (c) means communicating the condition at said sense node to said output driver; (d) latch means for maintaining the condition at said sense node at said output driver when said latch means is set; (e) single clock means for providing a sequence of clock pulse cycles wherein each clock pulse cycle iniates and terminates said set condition of said latch means; and (f) wherein said latching means comprises a pair of cross connected field effect transistors; a pair of load field effect transistors each operatively connected to one of said cross connected field effect transistors; said sense node connected to the source of one load field effect transistor and the gating electrode of the cross connected field effect transistor associated with the other of said load field effect transistors; and a set/reset field effect transistor with its drain connected to said sense node, its source connected to the drain of said cross connected field effect transistor associated with said one load field effect transistor and the gating electrode connected to said clock means.
Claim 3
Dependent Claim
273 words
A read only memory including a matrix formed by columns and rows of devices on a single substrate with a first series of conductors respectively interconnecting columns of said devices, a second series of conductors respectively interconnecting rows of said devices and a third series of conductors each respectively connected to a plurality of said devices to sense the output of selected devices comprising (a) first decode means for selecting one of said first series of conductors; (b) second decode means for selecting one of said second series of conductors; (c) output sense means for sensing the logical conditions of said third series of conductors; and (d) single reset means as a train of clock pulses alternating between a logical 1 condition and a logical 0 condition for resetting and enabling said first, second and third series of conductors; said first and second decode means and said output sense means; and (e) wherein said output sense means includes latching means comprising a pair of cross connected field effect transistors; a pair of load field effect transistors each operatively connected to one of said cross connected field effect transistors; a sense node connected to said third series of conductors, to the source of one load field effect transistor and to the gating electrode of the cross connected field effect transistor associated with the other of said load field effect transistors; and a set/reset field effect transistor with its drain connected to said sense node, its source connected to the drain of said cross connected field effect transistor associated with said one load field effect transistor and the gating electrode connected to said clock means.
Claim 4
Dependent Claim
273 words
A read only memory including a matrix formed by columns and rows of devices on a single substrate with a first series of conductors respectively interconnecting columns of said devices, a second series of conductors respectively interconnecting rows of said devices and a third series of conductors each respectively connected to a plurality of said devices to sense the output of selected devices comprising (a) first decode means for selecting one of said first series of conductors; (b) second decode means for selecting one of said second series of conductors; (c) output sense means for sensing the logical conditions of said third series of conductors; and (d) single reset means as a train of clock pulses alternating between a logical 1 condition and a logical 0 condition for resetting and enabling said first, second and third series of conductors; said first and second decode means and said output sense means; and (e) wherein said output sense means includes latching means comprising a pair of cross connected field effect transistors; a pair of load field effect transistors each operatively connected to one of said cross connected field effect transistors; a sense node connected to said third series of conductors, to the source of one load field effect transistor and to the gating electrode of the cross connected field effect transistor associated with the other of said load field effect transistors; and a set/reset field effect transistor with its drain connected to said sense node, its source connected to the drain of said cross connected field effect transistor associated with said one load field effect transistor and the gating electrode connected to said clock means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-05-25 | 1984-11-24 | 1985-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-05-25 | 1988-11-24 | 1989-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-05-25 | 1992-11-24 | 1993-05-26 | $7700.00 | Window Closed / Lapsed |