Abstract To turn a thyristor, particularly a high-voltage thyristor, ON, and to connect the thyristor and the utilization circuit to a power source, a charge capacitor is connected to a charging circuit to charge the capacitor when the thyristor is blocked or in OFF state. A controlled switch, typically a transistor 20, is connected to the charge capacitor 19 and connects the charge capacitor to the gate electrode of the thyristor, when the controlled switch is turned ON; a control circuit is connected to the controlled switch which includes an opto-coupler 28 to control its conduction. Preferably, a threshold sensitive element such as a Zener diode 25, or a four-layer diode 30, is included in the controlled switch transistor base circuit to provide for sharp turn-on characteristics. Since the conduction characteristics of the controlled switching transistor 20 will depend on the charge state of the capacitor 19, the controlled switching transistor will be conductive only when the capacitor has a sufficiently high charge for reliable firing of the thyristor.
Switching circuit to turn ON a thyristor (10), particularly a high-voltage thyristor, under control of a pulse source (29) comprising a charge capacitor (19); a charging circuit (13-18) charging the capacitor when the thyristor is in blocked or OFF state; a transistor (20) having its emitter-collector path connected between the charge capacitor (19) and the gate electrode of the thyristor (10) for connecting the charge capacitor to the gate electrode when the transistor is controlled to conduction; a control circuit including an opto-coupler connected to the base of the transistor for controlling conduction of the transistor (20); and a threshold sensing element (25, 30) permitting control of the base circuit of said transistor to conduction, only if the charge voltage across the charge capacitor exceeds the threshold level of said threshold element.
Claim 2
Dependent Claim
132 words
Switching circuit to turn ON a thyristor (10), particularly a high-voltage thyristor, under control of a pulse source (29) comprising a charge capacitor (19); a charging circuit (13-18) charging the capacitor when the thyristor is in blocked or OFF state; a transistor (20) having its emitter-collector path connected between the charge capacitor (19) and the gate electrode of the thyristor (10) for connecting the charge capacitor to the gate electrode when the transistor is controlled to conduction; a control circuit including an opto-coupler connected to the base of the transistor for controlling conduction of the transistor (20); and a threshold sensing element (25, 30) permitting control of the base circuit of said transistor to conduction, only if the charge voltage across the charge capacitor exceeds the threshold level of said threshold element.
Claim 3
Dependent Claim
14 words
Circuit according to claim 1 wherein the threshold element comprises a Zener diode (25).
Claim 4
Dependent Claim
28 words
Circuit according to claim 2, further including a controlled bridging switch (27) connected across said Zener diode (25) and controlled to conduction upon breakdown of the Zener diode.
Claim 5
Dependent Claim
86 words
Circuit according to claim 3, wherein said controlled bridging switch comprises a bridging transistor (27) having its base circuit connected to the emitter-collector circuit of the transistor (20) to render said bridging transistor (27) conductive upon conduction of the transistor (20) and hence short out the voltage drop across the Zener diode (25) once the transistor (20) has been rendered conductive upon initial breakdown of the Zener diode (25) when the voltage across the charge capacitor (19) has exceeded the breakdown voltage of the Zener diode.
Claim 6
Dependent Claim
14 words
Circuit according to claim 1, wherein the threshold element comprises a four-layer diode (30).
Claim 7
Dependent Claim
48 words
Circuit according to claim 1, wherein said threshold seasing element (25, 30) and said transistor (20) form a positive feedback circuit to cause rapid maximum conduction of said transistor when the threshold level of said threshold element is exceeded by the charge level across the charge capacitor (19).