US4262340A
Expired / Lapsed
US
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Semiconductor memory device
Assignee: Fujitsu Ltd
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Filing: 1979-11-09
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Granted: 1981-04-14
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Expires: 1999-11-09
Abstract
Abstract A semiconductor memory device provides a plurality of bit lines, a plurality of memory cells each of which is connected to a pair of different bit lines, a plurality of common word wires each of which is connected to the memory cells via a transmission gate. A characteristic feature of the present invention is to provide at least one amplifier between two memory cells which are connected to a word line or a bit line so as to prevent an increase of the access time of the memory device.
Inventors
- 👤 Nobuo Sasaki
- 👤 Yasuo Kobayashi
- 👤 Takashi Iwai
- 👤 Motoo Nakano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:15
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/417; G11C11/418; G11C11/401; G11C11/4063; G11C11/407; G11C11/408; G11C11/4085; G11C11/412; G11C5/00; G11C5/06; G11C5/063; G11C8/00; G11C8/08; H; H10; H10B; H10B10/00; H10B10/12; H10B10/125
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
131 words
A semiconductor memory device comprising a plurality of bit wires, a plurality of transmission gates connected to said bit wires, a plurality of memory cells each of which is connected to a different pair of said bit wires via a respective pair of said transmission gates, at least one word line each of which is connected to respective ones of said memory cells via the control terminal of the respective ones of said transmission gates, each said word line comprising a distributed resistance that contributes to the decay of a voltage signal applied selectively to said at least one word line, and at least one amplifier which is inserted in said word line between respective adjacent pair of said memory cells to maintain said voltage signal along each respective word line.
Claim 2
Dependent Claim
131 words
A semiconductor memory device comprising a plurality of bit wires, a plurality of transmission gates connected to said bit wires, a plurality of memory cells each of which is connected to a different pair of said bit wires via a respective pair of said transmission gates, at least one word line each of which is connected to respective ones of said memory cells via the control terminal of the respective ones of said transmission gates, each said word line comprising a distributed resistance that contributes to the decay of a voltage signal applied selectively to said at least one word line, and at least one amplifier which is inserted in said word line between respective adjacent pair of said memory cells to maintain said voltage signal along each respective word line.
Claim 3
Dependent Claim
29 words
A semiconductor memory device according to claim 1, wherein said memory cells are static memory cells which are formed by using MOS field, effect transistors having a bulk construction.
Claim 4
Dependent Claim
32 words
A semiconductor memory device according to claim 1, wherein said memory cells are static memory cells which are formed by using MOS field effect transistors having an SOS (silicon on sapphire) construction.
Claim 5
Dependent Claim
21 words
A semiconductor memory device according to claim 1, wherein said amplifier is formed by two inverters which are connected in series.
Claim 6
Dependent Claim
127 words
A semiconductor memory device comprising a plurality of bit lines, each said bit line comprising a distributed resistance that contributes to the decay of a voltage signal applied to said line, a plurality of transmission gates connected to said bit wires, a plurality of memory cells each of which is connected to a different pair of said bit lines via a respective pair of said transmission gates, at least one word line each connected to respectives ones of said memory cells via the respective control terminal of said transmission gates, and at least one pair of amplifiers respectively inserted in at least one of said pair of bit lines between two of said memory cells to maintain said voltage signal along each respective pair of bit lines.
Claim 7
Dependent Claim
127 words
A semiconductor memory device comprising a plurality of bit lines, each said bit line comprising a distributed resistance that contributes to the decay of a voltage signal applied to said line, a plurality of transmission gates connected to said bit wires, a plurality of memory cells each of which is connected to a different pair of said bit lines via a respective pair of said transmission gates, at least one word line each connected to respectives ones of said memory cells via the respective control terminal of said transmission gates, and at least one pair of amplifiers respectively inserted in at least one of said pair of bit lines between two of said memory cells to maintain said voltage signal along each respective pair of bit lines.
Claim 8
Dependent Claim
12 words
The device of claim 1 or 5, said lines comprising polycrystalline silicon.
Claim 9
Dependent Claim
13 words
The device of claim 1 or 5, said lines comprising doped semiconductor bulk.
References Cited (Backward Citations)
US4212083A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-04-13 | 1984-10-13 | 1985-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-04-13 | 1988-10-13 | 1989-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-04-13 | 1992-10-13 | 1993-04-14 | $7700.00 | Window Closed / Lapsed |