US4262083A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Positive resist for electron beam and x-ray lithography and method of using same
Assignee: Intersil Corp
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Filing: 1979-09-18
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Granted: 1981-04-14
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Expires: 1999-09-18
Abstract
Abstract Copolymers of an aziridine and sulfur dioxide are disclosed which are useful as positive radiation resists for use in electron beam and x-ray lithography.
Inventors
- 👤 Thomas R. Pampalone
- 👤 Nitin V. Desai
- 👤 Eugene S. Poliniak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:49
CPC Classifications
C; C08; C08G; C08G75/00; C08G75/30; G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/114; Y10S430/122; Y10S430/123; Y10S430/167; Y10S430/168; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24835
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
123 words
The method of forming a predetermined surface relief pattern in a film of a resist material, said method comprising the steps of (a) providing a film of a positive resist material which is comprised of a copolymer of (1) an aziridine monomer of the formula ##STR3## wherein R 1 -R 5 are the same or different and are members selected from the group consisting of hydrogen, alkyl, aralkyl and aryl, and (2) sulfur dioxide on a substrate, (b) exposing a portion of the film corresponding to said predetermined pattern to radiation which changes the solubility of the exposed portion with respect to the unexposed portion, and (c) dissolving the more soluble portion of the film in a developer to provide said relief pattern.
Claim 2
Independent Claim
123 words
The method of forming a predetermined surface relief pattern in a film of a resist material, said method comprising the steps of (a) providing a film of a positive resist material which is comprised of a copolymer of (1) an aziridine monomer of the formula ##STR3## wherein R 1 -R 5 are the same or different and are members selected from the group consisting of hydrogen, alkyl, aralkyl and aryl, and (2) sulfur dioxide on a substrate, (b) exposing a portion of the film corresponding to said predetermined pattern to radiation which changes the solubility of the exposed portion with respect to the unexposed portion, and (c) dissolving the more soluble portion of the film in a developer to provide said relief pattern.
Claim 3
Dependent Claim
26 words
The method according to claim 1 wherein the alkyl has 1-12 carbon atoms, the aralkyl has 7-12 carbon atoms and the aryl has 6-12 carbon atoms.
Claim 4
Dependent Claim
26 words
The method according to claim 1 wherein R 1 -R 5 are selected from the group consisting of hydrogen and lower alkyl having 1-4 carbon atoms.
Claim 5
Dependent Claim
34 words
The method according to claim 3 wherein said radiation is an x-ray radiation and at least one of the substituents R 1 -R 5 is a lower alkyl which is substituted with a halogen.
Claim 6
Dependent Claim
11 words
The method according to claim 4 wherein the halogen is chlorine.
Claim 7
Dependent Claim
18 words
The method according to claim 1 wherein said radiation is in the form of a beam of electrons.
Claim 8
Dependent Claim
11 words
The method according to claim 1 wherein the radiation is x-rays.
Claim 9
Dependent Claim
13 words
The exposed developed film prepared in accordance with the process of claim 1.
References Cited (Backward Citations)
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US3884696A
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US3898350A
Cited
US3935332A
Cited
US3935331A
Cited
US4061829A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-04-13 | 1984-10-13 | 1985-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-04-13 | 1988-10-13 | 1989-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-04-13 | 1992-10-13 | 1993-04-14 | $7700.00 | Window Closed / Lapsed |