US4257825A
Expired / Lapsed
US
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Method of manufacturing semiconductor devices having improvements in device reliability by thermally treating selectively implanted test figures in wafers
Assignee: US Philips Corp
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Filing: 1979-08-02
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Granted: 1981-03-24
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Expires: 1999-08-02
Abstract
Abstract A method of manufacturing semiconductor devices in which at least one zone is formed in a number of semiconductor wafers by implantation of doping ions and by a subsequent thermal treatment. In order to reduce the costs for the thermal treatment (individual test wafers) and to reduce the spread, at least one test figure is formed in each semiconductor wafer by the implantation and is subjected to a thermal treatment after the implantation of the doping ions by means of an intensive radiation directed thereon. The electrical properties of the test figure are then measured and further thermal treatment of the whole semiconductor wafer is determined in accordance with the result of this measurement.
Inventors
- 👤 Hanno Schaumburg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:46
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/23; G; G01; G01R; G01R31/00; G01R31/26; G01R31/27; G01R31/275; G01R31/28; G01R31/302; G01R31/308; H10P30/00; H10P30/20; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
83 words
A method of manufacturing semiconductor devices in which at least one zone of a given conductivity type is provided in a number of semiconductor wafers comprising the steps of implanting doping ions into each semiconductor wafer to form at least one test figure, subjecting only said test figure to a thermal treatment by selectively directing an intensive radiation thereon, measuring electrical properties of said test figure, and carrying-out further thermal treatment of the entire semiconductor wafer as a result of said measuring step.
Claim 2
Independent Claim
83 words
A method of manufacturing semiconductor devices in which at least one zone of a given conductivity type is provided in a number of semiconductor wafers comprising the steps of implanting doping ions into each semiconductor wafer to form at least one test figure, subjecting only said test figure to a thermal treatment by selectively directing an intensive radiation thereon, measuring electrical properties of said test figure, and carrying-out further thermal treatment of the entire semiconductor wafer as a result of said measuring step.
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1, wherein said intensive radiation is optical radiation originating from a laser.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein said intensive radiation is radiation from an electron beam.
Claim 5
Independent Claim
27 words
A method as claimed in one of claims 1, 2 or 3, wherein said intensive radiation is directed selectively on said test figure by using a mask.
Claim 6
Independent Claim
33 words
A method as claimed in one of claims 1, 2 or 3, wherein said intensive radiation is directed as a direct beam only on said test figure in the absence of a mask.
Claim 7
Independent Claim
50 words
A method as claimed in one of claims 1, 2, or 3, wherein after said steps of subjecting said test figure to intensive radiation and measuring said electrical properties, the semiconductor wafers are divided into groups, and each group of said wafers are subjected to the same further thermal treatment.
Claim 8
Dependent Claim
45 words
A method as claimed in claim 4, wherein after said steps of subjecting said test figure to intensive radiation and measuring said electrical properties, the semiconductor wafers are divided into groups and each group of said wafers are subjected to the same further thermal treatment.
Claim 9
Dependent Claim
45 words
A method as claimed in claim 5, wherein after said steps of subjecting said test figure to intensive radiation and measuring said electrical properties, the semiconductor wafers are divided into groups and each group of said wafers are subjected to the same further thermal treatment.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-23 | 1984-09-22 | 1985-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-23 | 1988-09-22 | 1989-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-23 | 1992-09-22 | 1993-03-24 | $7700.00 | Window Closed / Lapsed |